2N2857

MECHANICAL DATA Dimensions in mm (inches)

4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178)

NPN TRANSISTOR

5.33 (0.210) 4.32 (0.170)

FEATURES
SILICON NPN TRANSISTOR

12.7 (0.500) min.

0.48 (0.019) 0.41 (0.016) dia.

APPLICATIONS:
AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz

2.54 (0.100) Nom.

4 3 2 1

TO-72 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)

VCBO VCEO VEBO IC PD PD TSTG , TJ Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Device Dissipation @ TA =25C Total Device Dissipation @ TC =25C Operating and Storage Temperature Range 30V 15V 2.5V 40mA 200mW 300mW 65 to 200C

Semelab plc.

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk

Prelim. 7/98

2N2857

ELECTRICAL CHARACTERISTICS
Parameter
V(BR)CBO* V(BR)CEO V(BR)EBO ICBO hFE NF CEBO Gpe rbBCbc fT Cre Pc Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Base Cut-off Current DC Current Gain Noise Figure Emitter Base Capacitance Power Gain (Neutralised) Feedback Time Constant Transition Frequency

(TA = 25C unless otherwise stated)

Test Conditions
IC = 1A IE = 10A VCB = 15V IE = 0 VCE = 1V VCE = 6V f = 450MHz VEB = 0.5V f = 1 MHz VCE = 6V f = 450MHz VCB = 6V f = 31.9MHz VCE = 6V f = 100 MHz VCE = 10V f = 1 MHz VCB = 10V f = 500MHz IC = 12mA IC = 5mA IC = 0 IC = 1.5mA RG = 50 IC = 2mA Tamb= 150C IC = 3mA IC = 1.5mA RG = 50 IC = 0 IE = 0 IB = 0 IC = 0

Min.
30 15 2.5

Typ.

Max. Unit
V 10 1 nA A dB pF 19 dB ps GHz pF mW

Collector Emitter Breakdown Voltage IC = 3mA

30 3.8 1.4 12.5 4 1 0.6 30 7

150 4.5

15 1.9 1

Reverse Capacitance Oscillator Power Output

Semelab plc.

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk

Prelim. 7/98