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  • 2 SC 1969

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    George Moraru
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    This document specifies an isc Silicon NPN Power Transistor (model 2SC1969) for high power gain applications in HF band amplifiers requiring 10-14 watts of output power. Key specifications include a minimum power gain of 12dB at 27MHz with 16W output power, maximum ratings of 60V collector-base voltage and 25V collector-emitter voltage, and typical DC current gain between 10-180 and collector efficiency above 60% at 12V and 1W input power. The transistor is rated for operating temperatures from -55°C to 150°C.

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    Original Title

    2sc1969

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    This document specifies an isc Silicon NPN Power Transistor (model 2SC1969) for high power gain applications in HF band amplifiers requiring 10-14 watts of output power. Key specifications include a minimum power gain of 12dB at 27MHz with 16W output power, maximum ratings of 60V collector-base voltage and 25V collector-emitter voltage, and typical DC current gain between 10-180 and collector efficiency above 60% at 12V and 1W input power. The transistor is rated for operating temperatures from -55°C to 150°C.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    86 views2 pages

    2 SC 1969

    Uploaded by

    George Moraru
    This document specifies an isc Silicon NPN Power Transistor (model 2SC1969) for high power gain applications in HF band amplifiers requiring 10-14 watts of output power. Key specifications include a minimum power gain of 12dB at 27MHz with 16W output power, maximum ratings of 60V collector-base voltage and 25V collector-emitter voltage, and typical DC current gain between 10-180 and collector efficiency above 60% at 12V and 1W input power. The transistor is rated for operating temperatures from -55°C to 150°C.

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    © All Rights Reserved
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    of 2

    isc Product Specification

    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor

    2SC1969

    DESCRIPTION
    High Power Gain: Gpe12dB,f= 27MHz, PO= 16W
    High Reliability

    APPLICATIONS
    Designed for 10~14 watts output power class AB amplifiers
    applications in HF band.

    ABSOLUTE MAXIMUM RATINGS (Ta=25)


    SYMBOL

    PARAMETER

    VALUE

    UNIT

    VCBO

    Collector-Base Voltage

    60

    VCEO

    Collector-Emitter Voltage RBE=

    25

    VEBO

    Emitter-Base Voltage

    Collector Current

    Collector Power Dissipation


    @TC=25

    20

    IC

    PC

    Tj
    Tstg

    Collector Power Dissipation


    @Ta=25

    1.7

    Junction Temperature

    150

    -55~150

    Storage Temperature Range

    THERMAL CHARACTERISTICS
    SYMBOL

    PARAMETER

    MAX

    UNIT

    Rth j-a

    Thermal Resistance,Junction to Ambient

    73.5

    /W

    Rth j-c

    Thermal Resistance,Junction to Case

    6.25

    /W

    isc Websitewww.iscsemi.cn

    isc Product Specification

    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor

    2SC1969

    ELECTRICAL CHARACTERISTICS
    TC=25 unless otherwise specified
    SYMBOL

    PARAMETER

    CONDITIONS

    MIN

    TYP.

    MAX

    UNIT

    V(BR)CBO

    Collector-Base Breakdown Voltage

    IC= 1mA, IE= 0

    60

    V(BR)CEO

    Collector-Emitter Breakdown Voltage

    IC= 10mA; RBE=

    25

    V(BR)EBO

    Emitter-Base Breakdown Voltage

    IE= 5mA, IC= 0

    ICBO

    Collector Cutoff Current

    VCB= 30V; IE= 0

    0.1

    mA

    IEBO

    Emitter Cutoff Current

    VEB= 4V; IC= 0

    0.1

    mA

    hFE

    DC Current Gain

    IC= 10mA; VCE= 12V

    PO

    Output Power

    10

    180

    16

    18

    60

    70

    VCC= 12V; Pin= 1W; f= 27MHz


    C

    Collector Efficiency

    hFE Classifications
    X

    10-25

    20-45

    35-70

    55-110

    90-180

    isc Websitewww.iscsemi.cn

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