isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

2SK2077

DESCRIPTION
Drain Current ID= 7A@ TC=25
Drain Source Voltage: VDSS= 800V(Min)
Fast Switching Speed
APPLICATIONS
Switching regulators
General purpose power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

800

VGS

Gate-Source Voltage

30

Drain Current-continuous@ TC=25

Pulsed Drain Current

21

Total Dissipation@TC=25

150

Max. Operating Junction Temperature

150

-55~150

ID
ID(puls)
Ptot
Tj
Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

Rth j-c

Thermal Resistance, Junction to Case

Rth j-a

Thermal Resistance, Junction to Ambient

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MAX

UNIT

0.833

/W

50

/W

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isc Product Specification

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

2SK2077

ELECTRICAL CHARACTERISTICS (TC=25)

SYMBOL

V(BR)DSS

PARAMETER

CONDITIONS

MIN

Drain-Source Breakdown Voltage

VGS= 0; ID= 10mA

800

VGS(th)

Gate Threshold Voltage

VDS=10V; ID=1mA

1.5

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 3.5A

IGSS

Gate-Body Leakage Current

IDSS

Zero Gate Voltage Drain Current

Ciss

Input Capacitance

Crss

Reverse Transfer Capacitance

TYPE

MAX

UNIT

3.5

1.7

VGS= 30V;VDS= 0

100

nA

VDS= 640V; VGS= 0

300

1.4

810

VDS=25V;
VGS=0V;

100

pF

fT=1MHz
Coss

tr

Output Capacitance

160

170

Rise Time
VGS=10V;

ton

Turn-on Time

ID=3.5A;

190
ns

VDD=400V;

tf
toff

RL=110
570

Turn-off Time

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160

Fall Time

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