INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 2SK763

DESCRIPTION
·Drain Current –ID=5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·Fast Switching Speed

APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 400 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-continuous@ TC=25℃ 5 A

Ptot Total Dissipation@TC=25℃ 50 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark

INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor 2SK763

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 400 V

VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA 1.0 5.0 V

RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A 0.9 1.4 Ω

IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±1 uA

IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 100 uA

ton Turn-on time VGS=10V;ID=3A; 40 ns

RL=50Ω
toff Turn-off time 170 ns

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark