Scribd
Upload
366 views2 pages

IRFP4229

The document summarizes the specifications of the IRFP4229 N-channel MOSFET transistor from INCHANGE Semiconductor. It has a maximum static drain-source on-resistance of 46mΩ, is enhancement mode, and is 100% avalanche tested. The maximum ratings include a drain-source voltage of 250V, drain current of 44A continuous and 180A single pulsed. It also provides thermal and electrical characteristic specifications including a gate threshold voltage of 3.0-5.0V and forward voltage of 1.3V at 26A.

Uploaded by

Hammer Carabali
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
366 views2 pages

IRFP4229

The document summarizes the specifications of the IRFP4229 N-channel MOSFET transistor from INCHANGE Semiconductor. It has a maximum static drain-source on-resistance of 46mΩ, is enhancement mode, and is 100% avalanche tested. The maximum ratings include a drain-source voltage of 250V, drain current of 44A continuous and 180A single pulsed. It also provides thermal and electrical characteristic specifications including a gate threshold voltage of 3.0-5.0V and forward voltage of 1.3V at 26A.

Uploaded by

Hammer Carabali
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤46mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·High Repetitive Peak Current Capability for Reliable Operation
·Short fall & Rise Times For Fast Switching

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 250 V

VGS Gate-Source Voltage ±30 V

ID Drain Current-Continuous 44 A

IDM Drain Current-Single Pulsed 180 A

PD Total Dissipation @TC=25℃ 310 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -40~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(j-c) 0.49 ℃/W

Channel-to-ambient thermal resistance


Rth(j-a) 40 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 250 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 3.0 5.0 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=26A 46 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA

IDSS Drain-Source Leakage Current VDS=250V; VGS= 0V 20 μA

VSD Diode forward voltage IS=26A, VGS = 0V 1.3 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

You might also like