isc Product Specification

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

2SK1200

DESCRIPTION
Drain Current ID= 3A@ TC=25
Drain Source Voltage: VDSS= 900V(Min)
Fast Switching Speed

APPLICATIONS
Designed for high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

900

VGS

Gate-Source Voltage

20

Drain Current-continuous@ TC=25

Total Dissipation@TC=25

80

Max. Operating Junction Temperature

150

-55~15
0

MAX

UNIT

0.83

/W

35

/W

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ID
Ptot
Tj
Tstg

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

th j-c

Thermal Resistance,Junction to Case

th j-a

Thermal Resistance,Junction to Ambient

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isc Product Specification

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

2SK1200

ELECTRICAL CHARACTERISTICS (TC=25)

SYMBOL
V(BR)DSS

PARAMETER

CONDITIONS

MIN

Drain-Source Breakdown Voltage

VGS=0; ID= 10mA

900

VGS(th)

Gate Threshold Voltage

VDS=10 VGS; ID=1mA

2.0

RDS(on)

Drain-Source On-stage Resistance

VGS=10V; ID= 1.5A

IGSS

Gate Source Leakage Current

IDSS
VSD
tr
ton
tf
toff

MAX

UNIT
V

4.0

7.0

VGS= 16V;VDS= 0

10

uA

Zero Gate Voltage Drain Current

VDS=720V; VGS= 0

250

uA

Diode Forward Voltage

IF=3A; VGS=0

Rise time
Turn-on time
Fall time

VGS=10V;ID=2A;
RL=15

Turn-off time

isc websitewww.iscsemi.cn
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TYP

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5.0

0.95

70

ns

80

ns

60

ns

120

ns

isc & iscsemi is registered trademark