2SC1970

Silicon NPN Transistor

RF Power Output
Features:
High Power Gain: G
pe
>/=9,2dB (V
CC
=13.5V, P
O
=6W, f =175MHz)

Application:
0,8 to 1 Watt Output Power Amplifier Applications in VHF Band
Absolute Maximum Ratings: (T
C
=+25C unless otherwise specified)
Electrical Characteristics: (T
C
=+25C unless otherwise specified)
The 2SC1970 is a silicon NPN epitaxial planer type transistor
designed for RF power amplifiers on VHF band mobile radio
applications.
WINTransceiver
B E C
Collector-Emitter Voltage (R
BE
=Infinity), V
CEO
17V
Collector-Base Voltage, V
CBO
35V
Emitter-Base Voltage, V
EBO
4V
Collector Current, I
C
0,6A
Collector Power Dissipation (T
A
=+25C), P
D
1W
Collector Power Dissipation (T
C
=+50C), P
D
5W
Operating J unction Temperature, T
J
+150C
Storage Temperature Range, T
stg
-55 to +150C
Thermal Resistance, J unction-to-Case, R
thJ C
25C/W
Thermal Resistance, J unction-to-Ambient, R
thJ A
125#176;C/W
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=5mA, I
E
=0
40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, R
BE
=Infinity
17 - - V
Page 1of 2 2SC1970
7/10/2008 http://malzev.tripod.com/comp/2sc1970.htm
Note 1. Pulse test: Pulse Width =150s, Duty Cycle =5%.



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Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=1mA, I
C
=0
4 - - V
Collector Cutoff Current
I
CBO
V
CB
=25V I
E
=0
- - 100 A
Emitter Cutoff Current
I
EBO
V
EB
=3V, I
C
=0
- - 100 A
DC Forward Current Gain
h
FE
V
CE
=10V, I
C
=100mA, Note 1
10 50 180
Power Output
P
O
V
CC
=13.5V, P
in
=600mW, f =175MHz
1 1,2 - W
Collector Efficiency 50 60 - %
Page 2of 2 2SC1970
7/10/2008 http://malzev.tripod.com/comp/2sc1970.htm