SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1911

DESCRIPTION With TO-3PFM package High breakdown voltage High speed switching Built-in damper diode APPLICATIONS For use in TV horizontal output applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION

Absolute maximum ratings(Ta= )

SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 5 10 50 150 -55~150 UNIT V V V A A W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1911

CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1A , IB=0 IC=4.5A ; IB=1.2A IC=4.5A ; IB=1.2A VCB=800V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IF=5A 50 8 MIN 600 5.0 1.5 10 200 25 2.0 V TYP. MAX UNIT V V V A mA

SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE VF

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SD1911

Fig.2 outline dimensions