JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

,LTD

TO-92 Plastic-Encapsulate Transistors

D965
FEATURES

TRANSISTOR NPN

TO 92

1.EMITTER

Power dissipation PCM : 0.75 WTamb=25 Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE1 DC current gain HFE2 HFE3 Collector-emitter saturation voltage VCE(sat)

2. COLLECTOR

3. BASE

1 2 3

unless
Test

otherwise
MIN 42 22 6

specified
TYP MAX UNIT V V V 0.1 0.1

conditions

Ic=1A IE=0 Ic= 1 IE= 10 mA IB=0

A IC=0

VCB= 30 V , IE=0 VEB= 6 V IC=0 VCE= 2 V, mA VCE= 2V, VCE= 2V, mA IC= 0.15 150 340 150

A A

IC = 500 mA IC = 2000

950

IC=3000mA,IB=100 mA

0.35

CLASSIFICATION OF H FE(2)
Rank Range R 340-600 T 560-950

TO-92 PACKAGE OUTLINE DIMENSIONS

D1

A1

e e1

Symbol A A1 b c D D1 E e e1 L

Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min

Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169