C1815

NPN Plastic-Encapsulate Transistors

P b Lead(Pb)-Free
TO92 FEATURES Power dissipation MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value 60 50 5 150 400 -55-150 Units V V V mA mW
3.BASE 1.EMITTER 2.COLLECTOR

1 2 3

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICSTamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) fT Cob NF

unless
Test

otherwise

specified
TYP MAX UNIT V V V 0.1 0.1 0.1 uA uA uA

conditions

MIN 60 50 5

Ic= 100 uA, IE=0 Ic= 0. 1 mA, IB=0 IE= 100 uA, IC=0 VCB= 60 VCE= 50 VEB= VCE= 5 V, V, IE=0 IB=0

V, IC=0 IC= 2mA 70

6 V,

700 0.25 1 V V MHz 3.5 10 pF dB

IC= 100mA, IB= 10 mA IC= 100 mA, IB= 10mA VCE= 10 V, IC= 1mA f=30MHz VCB=10V,IE=0 f=1MHZ VCE= 6 V, IC=0.1 mA f =1KHz,RG=10K 80

CLASSIFICATION OF
Rank Range

hFE(1)
O 70-140 Y 120-240 GR 200-400 BL 350-700

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23-Nov-06

C1815
Typical Characteristics

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23-Nov-06