S8S901

5502
SOT-23

TRANSISTOR(PNP)
FEATURES
z
Complimentary to S8050

1. BASE

Collector current: IC=0.5A

2. EMITTER

MARKING :

3. COLLECTOR

2TY

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

VCEO

Collector-Emitter Voltage

-25

VEBO

Emitter-Base Voltage

-5

IC

Collector Current -Continuous

-0.5

PC

Collector Power Dissipation

0.3

Tj

Junction Temperature

150

Tstg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Symbol

Parameter

Test

conditions

Collector-base breakdown voltage

V(BR)CBO

IC = -100A,

Collector-emitter breakdown voltage

V(BR)CEO

Emitter-base breakdown voltage

MIN

MAX

UNIT

-40

IC =-1mA, IB=0

-25

V(BR)EBO

IE= -100A, IC=0

-5

Collector cut-off current

ICBO

VCB= -40V, IE=0

-0.1

Collector cut-off current

ICEO

VCE= -20V, IB=0

-0.1

Emitter cut-off current

IEBO

VEB= -3V, IC=0

-0.1

IE=0

400

hFE(1)

VCE= -1V, IC= -50mA

120

hFE(2)

VCE= -1V, IC= -500mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

DC current gain

fT

Transition frequency

CLASSIFICATION OF
Rank
Range

VCE= -6V, IC= -20mA

150

f=30MHz

MHz

hFE(1)
L

120-200

200-350

JinYu

semiconductor

www.htsemi.com

S901
S8 550
2

JinYu

semiconductor

www.htsemi.com