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Power Transistor
2SB1184
FEATURES
z
Low VCE(sat).
Pb
VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
z
Lead-free
APPLICATIONS
z
TO-252
Parameter
Value
Units
VCBO
Collector-Base Volage
-60
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
IC
Collector Current
-3
ICP
-4.5
PC
Tj ,Tstg
-55 to +150
W007
Rev.A
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1
Production specification
Power Transistor
2SB1184
Symbol
Test conditions
MIN
VCBO
IC=-50uA,IE=0
-60
VCEO
IC=-1mA,IB=0
-50
VEBO
IE=-50uA,IC=0
-5
ICBO
VCB=-40V,IE=0
-1
uA
IEBO
VEBO=-4V,IC=0
-1
uA
DC current gain
hFE
VCE=-3V,IC=-0.5A
VCE(sat)
IC/IB=-2A /-0.2A
-1
VBE(sat)
IC/IB=-1.5A /-0.15A
-1.2
Transition frequency
fT
VCE=-5V,IE=-0.5A
f=30MHz
70
MHz
Cob
VCB=-10V,IE=0A,f=1MHz
50
pF
CLASSIFICATION
OF
TYP
82
MAX
UNIT
390
hFE(1)
Rank
Range
82-180
120-270
180-390
W007
Rev.A
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Production specification
Power Transistor
W007
Rev.A
2SB1184
www.gmicroelec.com
3
Production specification
Power Transistor
2SB1184
PACKAGE OUTLINE
Plastic surface mounted package
TO-252
TO-252
5.20
5.40
1.35
1.65
6.35
6.65
D
B
2.6
2.8
2.20
2..40
H
H
J
K
L
2.30 Typ.
0.60 Typ
0.02
0.1
0.50 Typ.
9.50
9.90
0.80 Typ.
All Dimensions in mm
SOLDERING FOOTPRINT
W007
Rev.A
2.70
1.50
6.80
6.40
1.80
2.30 2.30
Unit:mm
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Production specification
Power Transistor
PACKAGE
Device
2SB1184
INFORMATION
Package
Shipping
80PCS/Tube
2SB1184
TO-252
2500PCS/Tape&Reel
W007
Rev.A
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