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C2785

NPN SILICON TRANSISTOR

The2SC2785 is designed for use in driver stage of Afamplifier and

low speed switching. High Voltage VCEO:50V MIN Excellent hFE Lineaity hFE1(0.1mA) / hFE2(1.0mA) *Complementary to the 2SA1175 PNP Transistor.

ABSOLUTE MAXIMUM RATINGS(TA=25 ) Symbol Rating Unit Characteristic

Collector-Base Voltage Collector-Emitter Voltage Emitter -Base Voltage Collector Current Base-Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO Ic IB Pc TJ TSTG 60 50 5 150 20 250 150 -55 ~ +150 V V V mA mA mW

ELECTRCAL CHARACTERISTICS(TA=25 ) Characteristic Symbol Test Conditions Min Typ Max Unit
DC Current Gain DC Current Gain Noise Figure Current Gain -Bandwidth product Collector to Base capacitance Collector Cut-off Current Emitter Cut-off Current Base-Emitter Voltage Collector Saturation Voltage Base Saturation Voltage

hFE hFE
NF

VCE= 6V,IC=0.1mA, VCE= 6V,IC=1mA, VCE = 6V,Ic= 0.1mA f=1KHZ, RG=2.0K VCE = 6V,IE= -10mA VCB= 6V,IE= 0,f=1MHZ VCB = 60V,IE=0 VEB = 5V,IC=0, VCE= 6V,Ic= 1.0mA IC= 100mA,IB=10A IC= 100mA,IB=10A

50 110

185 200 0.8 600 15 450 4.0 100 100 dB MHZ pF nA nA V V V

fT COB ICBO IEBO VBE VcE(sat) VBE(sat)

150

250 3.0

0.55 0.62 0.65 0.15 0.3 0.86 1.0

hFE2 CLASSIFICAT ION

Classification HFE
RF
110-180

JF
135-220

HF
170-270

FF
200-320

EF
250-400

KF
300-600