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N-CHANNEL 100V - 0.055 - 22A TO-220 Low Gate Charge Stripfet™ Ii Power Mosfet
N-CHANNEL 100V - 0.055 - 22A TO-220 Low Gate Charge Stripfet™ Ii Power Mosfet
IRF540
VDSS 100 V
RDS(on) <0.077
ID 22 A
TYPICAL RDS(on) = 0.055 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
TO-220
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DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Ordering Information
SALES TYPE
PACKAGE TUBE
PACKAGING
IRF540
February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
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THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.76 62.5 300 C/W C/W C
IGSS
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 11 A Min. 2 Typ. 3 0.055 Max. 4 0.077 Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =25 V ID = 11 A Min. Typ. 20 870 125 52 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 12 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 80 V ID= 22 A VGS= 10V Min. Typ. 60 45 30 6 10 41 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 12 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 50 20 Max. Unit ns ns
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. ()Pulse width limited by safe operating area.
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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