PROCESS

Small Signal Transistor

PNP - Silicon RF Transistor Chip

CP616

Central

TM

Semiconductor Corp.

PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 24,790 PRINCIPAL DEVICE TYPES CM5160 EPITAXIAL PLANAR 21.7 x 21.7 MILS 9.0 MILS 3.5 MILS DIAMETER 3.5 x 3.5 MILS Al - 30,000 Au - 10,000

BACKSIDE COLLECTOR

145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

R2 (1-August 2002)

Central

TM

PROCESS

CP616

Semiconductor Corp.

Typical Electrical Characteristics

145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

R2 (1-August 2002)