Basic Analog Circuits

Basic Analog Electronic Circuits
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING
Basic Analog Electronic Circuits Dr. Lynn Fuller

Webpage: http://people.rit.edu/lffeee Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Email: Lynn.Fuller@rit.edu MicroE webpage: http://www.microe.rit.edu
Rochester Institute of Technology Microelectronic Engineering
1-7-2013 Basic_Analog_Circuits.ppt
Page 1
January 7, 2013 Dr. Lynn Fuller, Professor
OUTLINE Introduction Op Amp Comparator Bistable Multivibrator RC Oscillator Inverter with Hysteresis RC Integrator Peak Detector Switched Capacitor Amplifier Capacitors Design Examples References Rochester InstituteHomework of Technology Microelectronic Engineering
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INTRODUCTION Analog electronic circuits are different from digital circuits in that the signals are expected to have any value rather than two discrete values. Primitive analog components include the diode, mosfet, BJT, resistor, capacitor, etc,. Analog circuit building blocks include single stage amplifiers, differential amplifiers, constant current sources, voltage references, etc. Basic analog electronic ciruits include the operational amplifier, inverting amplifier, non-inverting amplifier, integrator, bistable multivibrator, peak detector, comparator, RC oscillator, etc. Mixed-mode analog integrated circuits include D-to-A, A-to-D, etc. This document will introduce some Basic analog electronic circuits.
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BASIC TWO STAGE OPERATIONAL AMPLIFIER
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SPICE ANALYSIS OF OP AMP VERSION 2

.incl rit_sub_param.txt m1 8 9 7 6 cmosn w=9u l=5u nrd=1 nrs=1 ad=45p pd=28u as=45p ps=28u m2 1 10 7 6 cmosn w=9u l=5u nrd=1 nrs=1 ad=45p pd=28u as=45p ps=28u m3 8 8 4 4 cmosp w=21u l=5u nrd=1 nrs=1 ad=102p pd=50u as=102p ps=50u m4 1 8 4 4 cmosp w=21u l=5u nrd=1 nrs=1 ad=102p pd=50u as=102p ps=50u m5 7 5 6 6 cmosn w=40u l=5u nrd=1 nrs=1 ad=205p pd=90u as=205p ps=90u m6 2 1 4 4 cmosp w=190u l=5u nrd=1 nrs=1 ad=950p pd=400u as=950p ps=400u m7 2 5 6 6 cmosn w=190u l=5u nrd=1 nrs=1 ad=950p pd=400u as=950p ps=400u m8 5 5 6 6 cmosn w=40u l=5u nrd=1 nrs=1 ad=205p pd=90u as=205p ps=90u vdd 4 0 3 vss 6 0 -3 cprobe 2 0 30p Rprobe 2 0 1meg cc 1 2 0.6p mr1 20 20 4 4 cmosp w=6u l=10u nrd=1 nrs=1 ad=200p pd=60u as=200p ps=60u mr2 5 5 20 4 cmosp w=6u l=10u nrd=1 nrs=1 ad=200p pd=60u as=200p ps=60u *************** *************
13.5kV/V gain ***dc open loop gain********* vi1 9 0 0 vi2 10 0 0 *.dc vi2 -0.002 0.002 1u .dc vi2 -1 1 0.1m *****open loop frequency characteristics***** *vi1 9 0 0 *vi2 10 0 dc 0 ac 1u *.ac dec 100 10 1g .end
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OPERATIONAL AMPLIFIER
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RIT OP AMP WITH OUTPUT STAGE

99 M6
W/L 100/2
M5
W/L 100/2
M8
W/L 100/2 W/L 282/2
M11 9 M12
M15
W/L 686/2
M19 12
3
Vin+
1
40/2
+V
+V
2
Vin40/2
M16 7 M9
W/L 100/2
W/L 3800/2
10
M1 5
M2 4
W/L 336/2
M18 14
W/L 100/2
M13
30/2 30/2
RL
M20 13 M17
W/L 645/2 W/L 2600/2
M7
W/L
20/40
M3
90/2
M4
90/2
8 M10 98
M14 11
90/2 90/2
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OPERATIONAL AMPLIFERS The 741 Op Amp is a general purpose bipolar integrated circuit that has input bias current of 80nA, and input voltage of +/- 15 volts @ supply maximum of +/- 18 volts. The output voltage can not go all the way to the + and - supply voltage. At a minimum supply of +/- 5 volts the output voltage can go ~6 volts p-p. The newer Op Amps have rail-rail output swing and supply voltages as low as +/- 1.5 volts. The MOSFET input bias currents are ~ 1pA. The NJU7031 is an example of this type of Op Amp.
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LOW VOLTAGE, RAIL-TO-RAIL OP AMP
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SOME BASIC ANALOG ELECTRONIC CIRCUITS These circuits should be familiar:

R1 Vin + Vo= - Vin R2/R1 R1 R2 Vo Vin + R2 Vo
Vo= Vin (1 + R2/R1)
Inverting Amplifier
Non-Inverting Amplifier
C
R Vo Vo= Vin Vin + Vo= -1/RC Vin dt Vo
Vin
Unity Gain Buffer

Integrator
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SOME BASIC ANALOG ELECTRONIC CIRCUITS

R1 V1 V2 R1 + Vo= ( -R3/R1) (V1 + V2) R3 Vo
Rf Rin V2 V1 Rin Rf + Vo Vo= Rf/Rin (V1-V2)
Inverting Summer
Difference Amplifier
Rochester Institute of Technology Microelectronic Engineering January 7, 2013 Dr. Lynn Fuller, Professor
Page 11
COMPARATOR +V Vin
+ Vo Vo
Theoretical
+V
Vref
-V Vref -V +V
Vin
-V
Measured
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BISTABLE CIRCUIT WITH HYSTERESIS R1 R2 +V

+ Vo Vo
+V
Theoretical
VTH -V
Vin
Vin
VTL
-V
Measured
Sedra and Smith pg 1187

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RC INTEGRATOR Vin Vin +Va -Va Vout = (-Va) + [2Va(1-e-t/RC)] If R=1MEG and C=10pF find RC=10us so t1 might be ~20us
Vout R C Vout +Va -Va for 0<t<t1 Smaller RC t
t1
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OSCILLATOR (MULTIVIBRATOR) R1 V T R2 Vo +V
+ Vo
+V -V
t1
-V C R
Period = T = 2RC ln
1+Vt/V 1-Vt/V
Bistable Circuit with Hysteresis and RC Integrator

Page 15
INTEGRATED RESISTORS
I + V V R= METAL POLY SIO2 I SILICON
Because normally the sheet resistance, s, is low, resistors can be big. Transistors with gate connected to drain or source act almost like resistors (in the first quadrant) and can be small. I + V Enhancement MOSFET
I = V/R
s L/W
I + V - MOSFET
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V
Depletion
THE INVERTER
SYMBOL VIN VOUT TRUTH TABLE VIN VOUT 0 1 +V +V R VIN SWITCH VOUT VIN VOUT VIN NMOS DEPLETION LOAD VO +V +V 1 0
R VOUT VIN
RESISTOR LOAD
ENHANCEMENT MOSFET LOAD

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OTHER INVERTER REALIZATIONS

+V +V -V +V +V
0 0
0 +V 0
0 0 +V 0 -V 0 VOUT VERSUS VIN +V +V -V
0 +V 0 +V +V
+V
VIN
VO VIN
VO VIN
VO VIN
VO VIN
VO
SWITCH
PMOS CMOS ENHANCEMENT Rochester Institute of Technology LOAD Microelectronic Engineering
NMOS NMOS ENHANCEMENT DEPLETION LOAD LOAD

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ALL ENHANCEMENT INVERTER GAIN

-Vo SYMBOL VIN VOUT 0 0 -V VOUT VS VIN -Vin V
Slope = Vo/Vin = Gain
TRUTH TABLE VIN VOUT 0 1 1 0
Wu/Lu
VOUT
Inverter Gain =
Wd/Ld Wu/Lu
VIN
Wd/Ld
PMOSFET ENHANCEMENT LOAD

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PMOS GAIN OF 2 INVERTER Lu = 4 (40 m) Wu= 2 (20 m) Vdd Contact Cuts Metal Thin Gate Oxide P+ Diffused D/S Ld = 2 (20 m) Wd= 4 (40 m) Vout Vin
Vdd
VOUT
Gnd
VIN
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NMOS INVERTER
1 INVERTER USING FOR RIT SUB-CMOS NMOSFET, Dr. Lynn Fuller, 1-15-2007 *LINE ABOVE IS TITLE * R=10K *START WIN SPICE AND ENTER LOCATION AND NAME OF INPUT FILE *THIS FILE IS INVERTER.TXT *EXAMPLE: winspice> source c:\old_drive\spice\INVERTER.txt *THE TRANSISTOR MODELS ARE IN THE FILE NAMED BELOW V1 .INCLUDE E:\SPICE\WINSPICE\RIT_MICROE_MODELS.TXT 0to-5 * + 2 *CIRCUIT DESCRIPTION *VOLTAGE SOURCES + * V2 V1 1 0 DC 5 V2 2 0 DC 0 *TRANSISTORS * M1 7 2 0 0 RITSUBN49 L=2U W=16U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 *RESISTORS R1 1 7 10000 * Slope = Vo/Vin = Gain *REQUESTED ANALYSIS * .OP .DC V2 0 5 .1 .PLOT DC V(7) Rochester Institute of Technology Microelectronic Engineering .END
7 M1
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INVERTER WITH HYSTERESIS

1 R=10K 3 + V1 5V 2 V2=0-5 + or 5-0 7 M1 M2 M3 Vout
Inverter with Hysteresis
With no M3 the circuit is a simple inverter with switch and resistive load. M1 and M2 in series is equivalent to single M with length equal to L of M1 + L of M2
No M3
With M3 in the circuit the threshold voltage of M2 is higher due to the body effect delaying the turn on of M2 when sweeping from 0 to 5. When sweeping from 5 to 0 M2 has a lower threshold voltage shifting the point when circuit starts to Rochester Institute of Technology Microelectronic Engineering switch to a lower voltage in.
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INVERTER WITH HYSTERESIS

INVERTER WITH HYSTERESIS USING FOR RIT SUB-CMOS NMOSFET, Dr. Lynn Fuller, 1-15-2007 Sweep Vin 0 to 5V *LINE ABOVE IS TITLE *START WIN SPICE AND ENTER LOCATION AND NAME OF INPUT FILE *THIS FILE IS HYSTERESIS.TXT *EXAMPLE: winspice> source c:/spice/Hysteresis.txt *THE TRANSISTOR MODELS ARE IN THE FILE NAMED BELOW .INCLUDE E:\SPICE\WINSPICE\RIT_MICROE_MODELS.TXT *CIRCUIT DESCRIPTION *VOLTAGE SOURCES V1 1 0 DC 5 V2 2 0 DC 0 *TRANSISTORS M1 7 2 0 0 RITSUBN49 L=2U W=8U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 M2 3 2 7 0 RITSUBN49 L=2U W=16U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 M3 1 3 7 0 RITSUBN49 L=2U W=32U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 *RESISTORS R1 1 3 10000 *REQUESTED ANALYSIS Sweep Vin 5 to 0V .OP .DC V2 5 0 -.1 *.DC V2 0 5 .1 .PLOT DC V(3) .END
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RC OSCILLATOR, INVERTER WITH HYSTERESIS All NMOS Realization

1 M4 3 V1 9V + C1 I
40pF
R
2 7
M2 M3
M1
50pF
V
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RC OSCILLATOR, INVERTER WITH HYSTERESIS

RC Oscillator, INVERTER WITH HYSTERESIS USING FOR RIT SUB-CMOS NMOSFET, Dr. Lynn Fuller, 4-11-2009 *LINE ABOVE IS TITLE * *START WIN SPICE AND ENTER LOCA TION AND NAME OF INPUT FILE *THIS FILE IS RC_OSC1.TXT *EXAMPLE: winspice> source c:/spice/Hysteresis.txt * *THE TRANSISTOR MODELS ARE IN THE FILE NAMED BELOW .INCLUDE c:\Documents and Settings\lffeee\Desktop\SPICE\WINSPICE_Examples\RIT_WINSPICE_MODELS.TXT * *CIRCUIT DESCRIPTION *V1 1 0 DC 10 * *TRANSISTORS M1 7 2 0 0 RITSUBN7 L=2U W=8U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 M2 3 2 7 0 RITSUBN7 L=2U W=16U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 M3 1 3 7 0 RITSUBN7 L=2U W=32U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 M4 1 1 3 0 RITSUBN7 L=16U W=2U ad=96e-12 as=96e-12 pd=44e-6 ps=44e-6 nrd=0.025 nrs=0.025 * R 2 3 1MEG C1 2 0 40E-12 * .IC V(2) 0 .TRAN 5US 400US .PLOT TRAN V(3) V(2) V(7) Rochester Institute of Technology .END Microelectronic Engineering
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CMOS INVERTER WITH HYSTERESIS
Inverter With Hysteresis

Inverting Latch
CMOS Inverter
Page 26
RC OSCILLATOR USING INVERTER WITH HYSTERESIS R Vx C RC Oscillator 1V/div 10pF and 5.6MEG
Vout
Vout
2V/div
Vx 10s/div Similar to the OpAmp RC oscillator except simpler internal circuitry. The high and low thresholds are not set by the user but are fixed internally.
Page 27
PEAK DETECTOR
Variable Vin C
Vo
Diode reverse leakage current ~100nA

Page 28
CAPACITORS Capacitor - a two terminal device whose current is proportional to the time rate of change of the applied voltage; I I = C dV/dt
C + V -
a capacitor C is constructed of any two conductors separated by an insulator. The capacitance of such a structure is: C = o r Area/d where o is the permitivitty of free space r is the relative permitivitty Area Area is the overlap area of the two conductor separated by distance d o = 8.85E-14 F/cm r air = 1 Rochester Institute of Technology Microelectronic Engineering r SiO2 = 3.9
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DIELECTRIC CONSTANT OF SELECTED MATERIALS

Vacuum Air Acetone Barium strontium titanate Benzene Conjugated Polymers Ethanol Glycerin Glass 1 1.00059 20 500 2.284 6 to 100,000 24.3 42.5 5-10 Methanol Photoresist Plexiglass Polyimide Rubber Silicon Silicon dioxide Silicon Nitride Teflon Water 30 3 3.4 2.8 3 11.7 3.9 7.5 2.1 80-88
http://www.asiinstruments.com/technical/Dielectric%20Constants.htm Microelectronic Engineering

Rochester Institute of Technology
Page 30
CALCULATIONS
Page 31
DESIGN EXAMPLE Square Wave Generator RC Integrator & Capacitor Sensor
Peak Detector
Comparator
Page 32
DESIGN EXAMPLE CAPACITOR SENSOR

R1 R2
+V + -V R R C
+ C Vref
Vo + -V
Square Wave Generator
RC Integrator & Capacitor Sensor
Buffer
Peak Detector
Comparator Display
Page 33
EXAMPLE LABORATORY RESULTS

Smaller Capacitance
Larger Capacitance
Square Wave Generator Output

Display
Buffer Output
Page 34
CAPACITOR MICROPHONE PLUS AMPLIFIER i i V C + R

3.3V
NJU703
Vo
-3.3
Vo = - i R i = d (CV)/dt , V is constant C = Co + Cm sin (2ft) i = V Cm 2 f cos (2ft)
Page 35
PHOTODIODE I TO V LINEAR AMPLIFIER
R2 20K R1 10K
R4 100K R3 10K
3.3V
3.3V
IR LED
I p n
Gnd Gnd
3.3V
NJU703
-3.3
NJU703
Vout 0 to 1V
-3.3
Page 36
PHOTO DIODE I TO V LOG AMPLIFIER

1N4448 R1 20K 3.3V IR LED Linear amplifier uses 100K ohm in place of the 1N4448 Vout 0 to 1V
Vout vs. Diode Current
3.5
I n p
Gnd Gnd
3.3V
NJU703 -3.3
Linear Amplifier Log Amplifier
3.0 Output Voltage (V) 2.5 2.0 1.5 1.0 0.5
Photodiode
0.0 0.01
0.1
10
100
1000
10000
Diod e C urrent (uA)
Page 37
PHOTO DIODE I TO V INTEGRATING AMPLIFIER Reset

Internal 100 pF
Rf
Ri
Analog Vout
Integrator and amplifier allow for measurement at low light levels
Page 38
DIODE AS A TEMPERATURE SENSOR

P+
N+
Poly Heater, Buried pn Diode, N+ Poly to Aluminum Thermocouple

Compare with theoretical -2.2mV/C
Page 39
Basic Analog Electronic Circuits SIGNAL CONDITIONING FOR TEMPERATURE SENSOR

R1 20K
p
3.3V
+
0.2 < V out < 0.7V
Gnd
Page 40
OP AMP CONSTANT CURRENT SOURCE
Floating Load
Vs +
Grounded Load
Vo R1 Vs I = Vs/R Rx Rx/R1=R3/R2 Vo R3
Load
+
R2 Load
I = Vs/R2
Page 41
RESISTIVE PRESSURE SENSOR +5 Volts R3 R4 R2 R1=427 Vo1=2.5v R2=427 Vo1 Gnd Gnd
Vo2
5 Volts
R1
R3=427 Vo2=2.5v R4=427 No Pressure Vo2-Vo1 = 0
Resistors on a Diaphragm
Page 42
INSTRUMENTATION AMPLIFIER 5 Volts

V1 Vo1 + R2 R3 + R3 R2 V2 + Vo2 R4 Gnd Vo R4
R1=427.6 Vo1=2.4965v R2=426.4
R3=426.4 Vo2=2.5035v R4=427.6
R1
Gnd With Pressure Vo2-Vo1 Rochester = Institute 0.007v of Technology Microelectronic Engineering =7 mV
R4 1 + 2R2 Vo = (V2-V1) R3 R1
Page 43
VOLTAGE CONTROLLED OSCILLATOR
Page 44
VCO
Page 45
POWER OUTPUT STAGE
+V +V
-
Vin
Vo
Rload -V -V
Page 46
Basic Analog Electronic Circuits CIRCUIT FOR LOW FREQUENCY CV MEASUREMENTS
Vin 1 V/sec Ramp + C
R1=18 Mohm
R3=33 Kohm
+ LM081
R2=1 Kohm
+ LM081 Vout
Vout = (C R1 R3 / R2) (dVin/dt)

Page 47
C-V MEASUREMENTS ON N-TYPE SILICON
Low Frequency Inversion
Depletion
C CFB Accumulation
High Frequency VT
Cmin V VFB 0
Page 48
C-V MEASUREMENTS ON P-TYPE SILICON
Depletion Accumulation
C CFB
High Frequency Cmin V VFB

VT 0
Page 49
TEMPERATURE BIAS STRESS TESTING Sodium and other metal ions are mobile at low temperatures. These + ions can be moved across a gate oxide by applying + or - voltages to the gate electrode while heating the wafer. Apply - 50 volts to the gate Heat the substrate to 200 C Wait 15 minutes Cool the substrate to 25 C -V Measure C-V Apply +50 volts to the gate Heat the substrate to 200 C Wait 15 minutes Cool the substrate to 25 C Measure C-V
Na+ Na+ Na+ Na+
Oxide
Silicon
Page 50
TEMPERATURE BIAS STRESS TESTING
Depletion
C CFB Accumulation
High Frequency VT
Cmin V VFB 0
Page 51
REFERENCES
1. Switched Capacitor Circuits, Phillip E. Allen and Edgar Sanchez-Sinencio, Van Nostrand Reinhold Publishers, 1984. 2. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial, Randall L. Geiger and Edgar Sanchez-Sinencio, IEEE Circuits and Devices Magazine, March 1985, pg. 20-32. 3. Microelectronic Circuits, 5th Edition, Sedra and Smith
Page 52
HOMEWORK BASIC ANALOG CIRCUITS 1. Create one good homework problem and the solution related to the material covered in this document. (for next years students) 2. Design a bistable multivibrator witrh Vth of +/- 7.5 volts and frequency of 5 Khz. 3. Design a temperature sensor circuit that will shut down a heater if the temperature exceeds 90C 4. Design a peak detector that will respond to changes in input in less than one second. 5. Derive the equation for the oscillator on page 15 (multivibrator).
Page 53

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Basic Analog Electronic Circuits

ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

Basic Analog Electronic Circuits Dr. Lynn Fuller

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

Basic Analog Electronic Circuits

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

BASIC TWO STAGE OPERATIONAL AMPLIFIER

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

SPICE ANALYSIS OF OP AMP VERSION 2

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

RIT OP AMP WITH OUTPUT STAGE

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

LOW VOLTAGE, RAIL-TO-RAIL OP AMP

Rochester Institute of Technology Microelectronic Engineering

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

SOME BASIC ANALOG ELECTRONIC CIRCUITS These circuits should be familiar:

Vo= Vin (1 + R2/R1)

R Vo Vo= Vin Vin + Vo= -1/RC Vin dt Vo

Unity Gain Buffer

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

SOME BASIC ANALOG ELECTRONIC CIRCUITS

Rf Rin V2 V1 Rin Rf + Vo Vo= Rf/Rin (V1-V2)

Basic Analog Electronic Circuits

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

BISTABLE CIRCUIT WITH HYSTERESIS R1 R2 +V

Sedra and Smith pg 1187

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

Vout R C Vout +Va -Va for 0<t<t1 Smaller RC t

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

Bistable Circuit with Hysteresis and RC Integrator

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

ENHANCEMENT MOSFET LOAD

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

OTHER INVERTER REALIZATIONS

0 0 +V 0 -V 0 VOUT VERSUS VIN +V +V -V

PMOS CMOS ENHANCEMENT Rochester Institute of Technology LOAD Microelectronic Engineering

NMOS NMOS ENHANCEMENT DEPLETION LOAD LOAD

January 7, 2013 Dr. Lynn Fuller, Professor

Basic Analog Electronic Circuits

ALL ENHANCEMENT INVERTER GAIN