BC107 BC108-BC109

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The complementary PNP types are respectively the BC177, BC178 and BC179.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC Pt o t T st g Tj January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T c as e 25 C Storage Temperature Junction Temperature Value BC107 50 45 6 BC108 30 20 5 100 0.3 0.75 55 to 175 175 BC109 30 20 5 Unit V V V mA W W C C 1/7

This datasheet has been downloaded from http://www.digchip.com at this page

BC107-BC108-BC109
THERMAL DATA
R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Ma x Ma x 200 500 C/W C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)

Symbol I CBO Parameter Collector Cutoff Current (I E = 0) Test Conditions for BC107 V CB = 40 V V CB = 40 V T amb = 150 C for BC108-BC 1 0 9 V CB = 20 V T amb = 150 C V CB = 20 V I C = 10 A for BC107 for BC108 for BC109 for BC107 for BC108 for BC109 for BC107 for BC108 for BC109 I B = 0.5 mA I B = 5 mA V CE = 5 V V CE = 5 V I B = 0.5 mA I B = 5 mA V CE = 5 V for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C for BC109 for BC109 Gr. B for BC109 Gr. C V CE = 5 V for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C for BC109 for BC109 Gr. B for BC109 Gr. C 110 110 200 110 110 200 420 200 200 420 550 50 30 30 45 20 20 6 5 5 70 200 650 700 750 900 230 180 290 350 180 290 520 350 290 520 120 90 150 120 90 150 270 150 270 450 220 450 800 220 450 800 800 450 800 250 600 700 700 Min. Typ. Max. 15 15 15 15 Unit nA A A A V V V V V V V V V mV mV mV mV mV mV

V (B R)CBO

Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Voltage Base-emitter Saturation Voltage DC Current Gain

V (BR)CE O *

I C = 10 mA

V (B R)E BO

I E = 10 A

V CE( sat )* VB E * V BE( sat )* h F E*

I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 10 mA I C = 100 mA I C = 2 mA

I C = 10 A

40

40 100 40 40 100

* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

2/7

BC107-BC108-BC109
ELECTRICAL CHARACTERISTICS (continued)
Symbol hfe Parameter Small Signal Current Gain Test Conditions I C = 2 mA f = 1 kHz V CE = 5 V for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C for BC109 for BC109 Gr. B for BC109 Gr. C V CE = 10 V V CB = 10 V 4 V EB = 0.5 V 12 V CE = 5 V f = 1 kHz for for for V CE BC107 BC108 BC109 =5V 2 2 1.5 10 10 4 dB dB dB pF 6 250 190 300 370 190 300 500 370 300 550 2 pF Min. Typ. Max. Unit

I C = 10 mA f = 100 MHz C CBO C EBO NF Collector-base Capacitance Emitter-base Capacitance Noise Figure IE = 0 f = 1 MHz IC = 0 f = 1 MHz I C = 0.2 mA R g = 2 k B = 200 Hz

I C = 0.2 mA R g = 2 k f = 10 Hz to 10 kHz B = 15.7 kHz h ie Input Impedance I C = 2 mA f = 1 kHz

for BC109 V CE = 5 V for for for for for for for for for for
* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

1.5

dB

BC107 BC107 BC107 BC108 BC108 BC108 BC108 BC109 BC109 BC109

Gr. A Gr. B Gr. A Gr. B Gr. C Gr. B Gr. C

4 3 4.8 5.5 3 4.8 7 5.5 4.8 7

k k k k k k k k k k

3/7

BC107-BC108-BC109
ELECTRICAL CHARACTERISTICS (continued)
Symbol hre Parameter Reverse Voltage Ratio Test Conditions I C = 2 mA f = 1 kHz V CE = 5 V for for for for for for for for for for hoe Output Admittance I C = 2 mA f = 1 kHz BC107 BC107 BC107 BC108 BC108 BC108 BC108 BC109 BC109 BC109 2.2x10 4 1.7x10 4 2.7x10 4 3.1x10 4 1.7x10 4 2.7x10 4 3.8x10 4 3.1x10 4 2.7x10 4 3.8x10 4 Min. Typ. Max. Unit

Gr. A Gr. B Gr. A Gr. B Gr. C Gr. B Gr. C

V CE = 5 V for for for for for for for for for for BC107 BC107 BC107 BC108 BC108 BC108 BC108 BC109 BC109 BC109 20 13 26 30 13 26 34 30 26 34 S S S S S S S S S S

Gr. A Gr. B Gr. A Gr. B Gr. C Gr. B Gr. C

* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

DC Normalized Current Gain.

Collector--emitter Saturation Voltage.

4/7

BC107-BC108-BC109
Collector-base Capacitance. Transition Frequency.

Noise Figure (for BC 109 only).

Noise Figure (for BC 109 only).

Noise Figure (for BC 109 only).

Power Rating Chart.

5/7

BC107-BC108-BC109

TO-18 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch

D G I H E F

L C B

0016043

6/7

BC107-BC108-BC109

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

7/7