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Diffusion in Solids: Issues To Address..
Diffusion in Solids: Issues To Address..
ISSUES TO ADDRESS...
How does diffusion occur? Why is it an important part of processing? How can the rate of diffusion be predicted for some simple cases? How does diffusion depend on structure and temperature?
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MECH 221
PM Wood-Adams
Fall 2008
DIFFUSION DEMO
Glass tube filled with water. At time t = 0, add some drops of ink to one end of the tube. Measure the diffusion distance, x, over some time. Compare the results with theory.
to t1 t2 t3 xo
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x (mm)
x1
x2 x3
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time (s)
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100% 0
Cu
Ni
Concentration Profiles
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C A D B
C A B D
MECH 221
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Substitutional Diffusion
applies to substitutional impurities atoms exchange with vacancies rate depends on: --number of vacancies --activation energy to exchange.
INTERSTITIAL DIFFUSION
Applies to interstitial impurities. More rapid than vacancy diffusion.
MECH 221
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Fall 2008
Callister 6e.
(Fig. 5.0 is courtesy of Surface Division, MidlandRoss.)
MECH 221
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Directional Quantity y J y Jz Jx x
Metal B
Fall 2008
10
Callister 6e.
Position, x
Diffusion coefficient [m2/s] concentration gradient [kg/m4]
dC Jx = D dx
Jx(left)
Jx(right)
Jx(left) = Jx(right)
x
Concentration, C, in the box doesnt change w/time.
Diffusion Coefficient, D Also called diffusivity Units: m2/s Depends on diffusing species and host Depends on temperature Higher diffusivity means a higher flux for the same concentration gradient
MECH 221
PM Wood-Adams
Fall 2008
Callister 6e.
0 x1 x2
5m m
D=3x10-11m2/s
m 10 m
MECH 221
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Fall 2008
dx
J(right) Concentration, C, in the box
dC d2C =D dt dx 2
In order to analyze non-steady state diffusion behavior we must solve this partial differential equation. The solution depends on the initial conditions and the boundary conditions. We will consider one type of non-steady state diffusion only.
MECH 221 PM Wood-Adams Fall 2008
x=0
MECH 221
x=0
PM Wood-Adams
x=0
Fall 2008
x C(x, t) Co = 1 erf 2 Dt Cs Co
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Example 1
Consider the impurity diffusion of gallium into a silicon wafer at 1100C. Prior to commencement of diffusion the wafer was free of gallium. At time = 0 the surface concentration is changed to 1024 atoms/m3. Find the depth below the surface at which the concentration will be 1022 atoms/m3 after 3 hours. Given: D=7.0 x 10-17 m2/s
MECH 221
PM Wood-Adams
Fall 2008
Example 2
Consider the gas carburizing of steel at 927C. The diffusion coefficient of carbon in steel at this temperature is 1.28 x 10-11 m2/s. The carbon content at the surface is 0.90% and the initial carbon content is 0.20%. Calculate the carbon content 0.50 mm below the surface after 5 hours of carburizing time.
MECH 221
PM Wood-Adams
Fall 2008
Example 3
Consider the surface treatment of steel with C at 950C. The initial concentration of C in the steel is 0.25 wt% and the surface concentration during treatment is 1.2 wt%. How long will it take to reach 0.8 wt% C at a position of 0.5 mm below the surface? Given: D=1.6 x 10-11 m2/s
MECH 221
PM Wood-Adams
Fall 2008
pre-exponential [m2/s] (see Table 5.2, Callister 6e) activation energy Q [J/mol],[eV/mol] exp d (see Table 5.2, Callister 6e )
RT
300
Experimental Data:
1500 600
10-8 D (m2/s)
T(C)
Ci
n -Fe
10-14
10-20
0.5
1.0
1.5
D has exp. dependence on T Recall: Vacancy does also! Dinterstitial >> Dsubstitutional Cu in Cu C in -Fe Al in Al C in -Fe Fe in -Fe Fe in -Fe Zn in Cu 2.0 1000K/T
19
Adapted from Fig. 5.7, Callister 6e. (Date for Fig. 5.7 taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.)
C in Fe
in Fe
Al in Al Cu Cu in Fe in Cun ei e Zn F -F
Diffusion Coefficient
MECH 221
PM Wood-Adams
Fall 2008
PROCESSING QUESTION
Copper diffuses into a bar of aluminum. 10 hours at 600C gives desired C(x). How many hours would it take to get the same C(x) if we processed at 500C? Key point 1: C(x,t500C) = C(x,t600C). Key point 2: Both cases have the same Co and Cs.
Result: Dt should be held constant. x C(x,t) Co (Dt)500C =(Dt)600C = 1 erf 2Dt Cs C o 5.3x10-13m2/s 10hrs Answer:
MECH 221
4.8x10-14m2/s
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