ELECTRONIC DEVICES AND CIRCUITS

BRIEF NOTES
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UNIT I :: ELECTRON DYNAMICS: CRO

19 31
1.602 10 , 9.1 10 e C m kg

, F force on electron in uniform electric field E
F=eE; acceleration
eE
a
m

If electron with velocity ' ' v moves in field ' ' E making an angle ' ' can be
resolved to sin , cos v v .
Effect of Magnetic Field B on Electron.
When B & Q are perpendicular path is circular
2
; ' '
mv m
r Period t
Be Be

When slant with ' ' path is # Helical.
EQUATIONS OF CRT
ELECTROSTATIC DEFLECTION SENSITIVITY
2
e
a
lL
S
dV

MAGNETIC DEFLECTION SENSITIVITY

2
m
a
e
S lL
mV

Velocity due to voltage V,

2eV
v
m

When E and B are perpendicular and initial velocity of electron is zero, the path is
Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where
u
Q

,
E
u
B
,
Be
m
.
UNIT II :: SEMICONDUCTOR JUNCTION

,
i e
S G
have 4 electrons in covalent bands. Valency of 4. Doping with trivalent
elements makes ' ' p , Pentavalent elements makes ' ' n semiconductor.
Conductivity ( )
n p
e n p +
where
, n p
are concentrations of Dopants.
&
n p

are mobilitys of electron and hole respectively.
- 1 -
Diode equation
1
d
T
V
nV
d s
I I e
_


,

2
; ln
d T A P
d o
d i
V V N N kT
r V
I I q n
_

0 19
0 273; 1.602 10 T C q C

+
Diode drop changes
0
@2.2 / mv C , Leakage current
s
I
doubles on
0
10 C
Diffusion capacitance is
d
dq
c
dv
of forward biased diode it is I
Transition capacitance
T
C
is capacitance of reverse biased diode
n
V

1 1
2 3
n to

RECTIFIERS
COMPARISION
HW FW CT FW BR
DC
V
m
V

2
m
V

2
m
V

rms
V
2
m
V
2
m
V
2
m
V
- 2 -

;
T
kT
V
q

K= Boltzman Constant

Ripple factor
1.21 0.482 0.482

Rectification efficiency
40.6% 81% 81%
PIV
Peak Inverse Voltage
m
V 2
m
V
m
V

UNIT III :: FILTERS
Harmonic Components in FW Output,
0
2 4 1 1
cos 2 cos 4 .....
3 15
m
V
v wt wt


+ +
' ;



- 3 -
Capacitance Input Filter,
Inductor Input Filter,
Critical inductance is that value at which
diode conducts continuously, in or half cycle.
LC FILTER,
2
2
12 LC

or
1.2
, 50 , , . for Hz Lin H Cin F
LC

FILTER,
RC FILTER,
LC LADDER,
1 2
1 2
2
. . .....
3
n
n
c c c
L L L
X X X
X X X

ZENER DIODE
ZENER REGULATOR

;
i z
s i z
s
V V
I V V
R

>>

z
z
z
V
r
I

TUNNEL DIODE
Conducts in ,
f
r
b b
, Quantum mechanical tunneling in region a-0-b-c.
-ve resistance b-c, normal diode c-d.
p
I
= peak current,
v
I = valley current;
p
v
=peak voltage 65 mV,
v
v =valley voltage
0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.
VARACTOR DIODE

Used in reverse bias & as tuning variable capacitance.

( )
T n
T R
K
C
V V

+
; n=0.3 for diffusion, n=0.5 for alloy junction,
1
o
T n
R
T
C
C
V
V

_
+

,

25
B
C
C
is figure of merit, Self resonance
1
2
o
S T
f
L C

- 4 -
FWD Bias Normal
Diode 0.7 V Drop
Reverse Bias
PHOTO DIODES
Diode used in reverse bias for light detection.
Different materials have individual peak response to a range of wave lengths.
UNIT - IV
BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC
Components of current are
,
nE pE
I I
at EB junction where
nE nE
nE pE E
I I
I I I

+

Emitter efficiency,
* nc
nE
I
I

transportation factor.

/ ; / BE f b BC r b
- 5 -
e b c
I I I +
;
c c
e b
I I
I I

Doping Emitter Highest
Base Lowest
e c b
I I I > >
Leakage currents :
, ,
CBO CEO EBO
I I I
( ) 1
CEO CBO
I I +
3 Configurations are used on BJT, CE, CB & CC

Common Emitter, VI characteristics

0
;
ce BE
i ie e ce
B c
V V
R h r r r
I I

AC Equivalent Circuit
COMMON BASE VI CHARACTERISTICS

- 6 -



Input Characteristics Circuit Output Characteristics
CE
C
V
B
I
I

;
1
C
E
I
I

; ;
V
CB
C cb EB
ib e fb cb
E e c
I V V
h r h r
I I I



UNIT - V
h- parameters originate from equations of amplifier
2 2 0 2
,
i i i r f i
v hi h v i h i h v + +
&
i i
v i are input voltage and current
2 2
& v i are output voltage and current

i
h
input impedance
, ,
ie ib ic
h h h ( ) , , 1
e e e
r r r + 1
]

f
h
current gain
, ,
fe fb fc
h h h
( ) , , 1 + 1
]

r
h
reverse voltage transfer
, ,
re rb rc
h h h

o
h
output admittance
, ,
oe ob oc
h h h
FIELD EFFECT TRANSISTOR, FET is Unipolar Device

- 7 -
COMPARISON
BE BC
SATURATION f/b f/b
ACTIVE f/b r/b
CUT OFF r/b r/b
AMPLIFIER COMPARISON
CB CE CF
i
R
LOW MED HIGH
I
A
I
A 1 +
V
A
High High <1
o
R
High High low
AC Equivalent Circuit
Construction n-Channel p-Channel
S=Source, G=Gate, D=Drain
GS Junction in Reverse Bias Always

gs
V
Controls Gate Width
VI CHARACTERSTICS

Transfer Characteristics Circuit Forward Characteristics

Shockley Equation

2
1
gs
d dss
p
V
I I
V
_



,
,
0
1
gs
m m
p
V
g g
V
_



,
MOSFET: Metal Oxide Semiconductor FET, IGFET

Depletion Type Mosfet Symbols Enhancement Mosfet

Depletion Type MOSFET can work width
0
gs
V >
and
0
gs
V <
Transfer Forward
Characteristics Characteristics
- 8 -
MOSFET JPET
High
10
10
i
R
8
10
0
50 R k
1m
Depletion
Enhancement Mode
Depletion
Mode
Delicate Rugged

Enhancement MOSFET operates with,
gs t
V V >
,
t
V Threshold Voltage

Forward Characteristics Transfer Characteristics

UNIT VI :: BIASING in BJT & JFET
Fixing Operating Point Q is biasing

Fixed Bias Emitter Stabilized Feedback Bias
CC B B BE
V I R V +
Fixed Bias ( ) 1
CC C B B B BE
V R I I R V + + +
( ) 1 Re
CC B B BE
V I R V + + +

- 9 -
D
JFET I Table
gs
V
D
I
0
DSS
I
0.3
P
V
2
DSS
I
0.5
P
V
4
DSS
I
P
V
0
COMPARISIONS
BJT FET
Current controlled Voltage controlled
High gain Med gain
Bipolar Unipolar
Temp sensitive Little effect of T
High GBWP Low GBWP
( ) ,
DS GS T
V sat V V
( )
2
( )
ds GS T
I ON K V V




VOLTAGE DIVIDER BIAS EMITTER STABILIZED
FIXED BIAS
STABILITY EQUATIONS

1 0 2 3 c c BE
I S I S V S + +

1 2 3
; ;
C C C
CO BE
I I I
S S S
I V



, STABILITY FACTOR
( ) 1
1
B
C
S
dI
dI

S must be as small as possible, Most ideal value =1

How to do determine stability factor for bias arrangement? Derive
B
C
dI
dI
and
substitute in S
Amplifier formulae:
l
V I
i
Z
A A
Z

,
i
Z
measured with output shorted

0
Z
measured with input shorted

CE amplifier

I
A
fe
h or
;

;
i
Z re
;
T
e
V
r
I

;
L
v
e
R
A
r

CB amplifier
1
A ; ;
L
v i e
e
R
A Z r
r

CC amplifier
( )
I
A 1 ; 1 ;
ie
V
i
h
A
R
+
( )
1
i fe E ie
R h R h + +
H Parameter Model CE

;
1
fe
I
oe l
h
A
h z

+

L
V fe
ie
Z
A h
h

- 10 -
2
1 2
CC
B
V R
V
R R

+
,
;
E
E B BE C
E
V
V V V I
R

( ) ( ) 1 Re
.
Vcc Rc Ib
Ib Rb Vbe
+ +
+ +

CB amplifier

; ; .
L
i ib I fb V fb
ib
R
R h A h A h
h

FET
CS amplifier ( )
0
|| ;
V m d d d
A g R r Z R
Common Gate Amplifier
,
1
s
V m d i
m s
R
A g R Z
g R

+
Common Drain
1
;
1
m s
V o
m s m
g R
A Z
g R g

+
RC Coupled Amplifiers
If cut off frequency
1
1
2
f
RC
,
1
1
1
1
tan ;
1
f
A
f
f
j
f

_


, _
+

,

6 / , 20 / Slope dB octave dB decade

,
f
Octave= 2
2
or f

is beta cut off frequency where

0.707
fe
h falls by

is

cut off frequency where 0.707

t
f
is
1
fe
h
gain bandwidth product.
UNIT VII :: FEED BACK AMPLIFIERS
Amplifier gain stands for any of Voltage amplifier, Current amplifier, Trans resistance
Trans admittance amplifier

Ve feed back amplifier depends on

| 1 | 1 , 1
b b
A ve f ve f + > < +
Feed back reduces noise distortion, gain variation due to parameters, increases BW.
( ) 1 A +
is called de-sensitivity factor.
Feed back amplifiers
Voltage series, voltage shunt; Current series, current shunt
- 11 -
0
0
; ;
1
f
f
i
X
X A
A A
A X X

+
i s f
X X X
for voltage, current series
( ) 1
f
i i
z z A +
1
f
A
A
A

+
, for all
1
f
i
i
z
z
A

+
, for voltage or current shunt
( ) 1
f
o o
z z A +
, for current series, shunt
0
1
f
o
z
z
A

+
, for voltage series and shunt.
UNIT VIII :: OSCILLATORS
Barkausen Criterion for oscillation loop gain =1, =0
0
, 360
0
.
HARTLEY OSCILLATOR
CRYSTAL OSCILLATORS
Tuned ckt replaced with Crystal
Phase shift oscillator
Wein Bridge Oscillator
- 12 -
1
2
T
f
L C

,
1 2 T
L L L M + t , ;
2
1
L
L

,
COLLPITS OSILLATOR,
1 2
, L L
replaced by
1 2
, C C
,
C replaced by L;
1
2
T
f
LC

1
s
LC

,
1
p
T
LC

FET MODEL
1
2 6
f
RC

, 29 A ,
Minimum RC sections 3
1 2 1 2
1
2
f
R R CC

,
if R1=R2=R, C1=C2=C ,
1
2
f
RC
;
1
3 A

BJT MODEL
1
4
2 6
C
f
R
RC
R

_
+

,
, 29 A ,
Minimum RC sections 3
- 13 -