Cgh25120F: 120 W, 2300-2700 MHZ, Gan Hemt For Wimax and Lte

CGH25120F
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
Crees CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Type : 440162 PN: CGH2512 0F
Typical Performance Over 2.3-2.7GHz

Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 2.3 GHz 12.5 -32.7 26.5 2.4 GHz 12.8 -34.0 28.0
(TC = 25C)
of Demonstration Amplifier
2.6 GHz 13.5 -29.5 32.5 2.7 GHz 13.6 -25.8 34.5 Units dB dBc %
2.5 GHz 13.1 -32.5 30.0
Note: Measured in the CGH25120F-TB amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01 % Probability on CCDF.
Features
2.3 - 2.7 GHz Operation 13 dB Gain
ptember 2012 Rev 2.2 Se
-32 dBc ACLR at 20 W PAVE 30 % Efficiency at 20 W PAVE High Degree of DPD Correction Can be Applied
Subject to change without notice. www.cree.com/rf
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature
3 1
Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS
Rating 84 -10, +2 -65, +150 225 30 12 245 80 1.5 -40, +150
Units Volts Volts C C mA A C in-oz C/W C
Units 25C 25C
25C 25C
RJC TC
85C 30 seconds
Note:
1 2 3
Current limit for long term, reliable operation. Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp Measured for the CGH25120F at PDISS = 56 W.
Electrical Characteristics (TC = 25C)

Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current2 Drain-Source Breakdown Voltage VGS(th) VGS(Q) IDS VBR -3.8 23.2 120 -3.0 -2.7 28.0 -2.3 VDC VDC A VDC VDS = 10 V, ID = 28.8 mA VDS = 28 V, ID = 0.5 A VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 28.8 mA Symbol Min. Typ. Max. Units Conditions
RF Characteristics (TC = 25C, F0 = 2.5 GHz unless otherwise noted) Saturated Output Power3,4,5 Pulsed Drain Efficiency3,5 Gain6 WiMAX Linearity6,7 Drain Efficiency6 Output Mismatch Stress Dynamic Characteristics Input Capacitance8 Output Capacitance
8
PSAT
10.5 27
130 60 12.5 -31 32
-27 10 : 1
W % dB dBc % Y
VDD = 28 V, IDQ = 0.5 A, VDD = 28 V, IDQ = 0.5 A, POUT = PSAT VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm No damage at all phase angles, VDD = 28 V, IDQ = 1.0 A, POUT = 20 W CW
G ACLR
VSWR
CGS CDS CGD
88 12 1.6
pF pF pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 40 S, Duty Cycle = 5 %. 4 PSAT is defined as IG = 10 mA peak. 5 Measured in CGH25120F-TB. 6 Equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01% Probability on CCDF. 7 Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge. 8 Includes package and internal matching components.
Copyright 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
CGH25120F Rev 2.2
Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf
Typical Performance
Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit V = 28 V, = 0.5 A Sparameters ofICGH25120F DD DQ
18 0
15
-5
12
-10
-15
-20
Gain Return Loss
-25
0 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
-30
Frequency (GHz)
Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance
WiMAX Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power of the CGH25120FCGH25120F measured in CGH25120F-TB Amplifier Circuit. WiMAX Transfer with and without DPD correction = 28V, Ids = A, 500 mA, Frequency = 2.5 GHz VDS = 28 V, IVds = 0.5 Frequency = 2.5 GHz DS
-20 -25 -30 -35 50 45 40 35 30 25 20 15 10 5 0 15 20 25 30 35 40 45 UnCorrected -ACLR Corrected -ACLR UnCorrected Eff UnCorrected +ACLR Corrected +ACLR Corrected Eff
-40 -45 -50 -55 -60 -65 -70
Output Power (dBm)
CGH25120F Rev 2.2
Drain Efficiency (%)

ACLR (dBc)
Return Loss (dB)
Linear Gain (dB)
Typical Pulse Performance
Typical Pulse Characteristics Output Power, Drain Efficiency, and Gain vs Input Power of the CGH25120F measured in CGH25120F-TB Amplifier Circuit. VDS = 28 V, IDS = 0.5 A, Freq = 2.5 GHz, Pulse Width = 40 S, Duty Cycle = 5 %
80 Output Power 70 Drain Efficiency Gain 60 17 18
Gain
16
Output Power (dBm) Drain Efiiciency(%)
50
15
40
Output Power
14
30
13
20
Efficiency
12
10
11
0 0 5 10 15 20 25 30 35 40
10
Input Power (dBm)
VDS
Typical Pulsed Saturated Power vs Frequency of the CGH25120F measured in CGH25120F-TB Amplifier Circuit. = 28 V, IDS = 0.5 A, PSAT = 10Pulsed mA I Peak, Pulse = 40 S, Duty Cycle = 5 % CGH25120 Saturated Output Power Width vs Frequency GS
53 80
52
Psat Drain Efficiency
76
Saturated Output Power (dBm)
50
68
49
64
48
60
47 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
56
Frequency (GHz)
CGH25120F Rev 2.2
Drain Efficiency (%)
51
72
Gain (dB)
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH25120F VDD = 28 V, IDQ = 500 mA
MAG (dB)
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120F VDD = 28 V, IDQ = 500 mA
Minimum Noise Figure (dB)
Electrostatic Discharge (ESD) Classifications
Parameter Human Body Model Charge Device Model
Symbol HBM CDM
Class 1A (> 250 V) II (200 < 500 V)
Noise Resistance (Ohms)

Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C
CGH25120F Rev 2.2
K Factor
Source and Load Impedances

D Z Source G Z Load
S
Frequency (MHz) 2300 2350 2400 2450 2500 2550 2600 2650 2700
1
Z Source 6.80 - j12.19 6.42 - j11.89 6.05 - j11.61 5.71 - j11.34 5.37 - j11.08 5.04 - j10.83 4.71 - j10.57 4.39 - j10.31 4.07 - j10.04
Z Load 4.38 - j1.42 4.39 - j1.36 4.39 - j1.33 4.36 - j1.32 4.31 - j1.33 4.23 - j1.34 4.11 - j1.36 3.98 - j1.37 3.80 - j1.36
Note : VDD = 28V, IDQ = 500mA. In the 440162 package. Note2: Impedances are extracted from CGH25120F-TB demonstration circuit and are not source and load pull data derived from transistor.
CGH25120F Power Dissipation De-rating Curve CGH25120F Average Power Dissipation De-rating Curve
70
60
50
Power Dissipation (W)
40
30
Note 1
20
10
0 0 25 50 75 100 125 150 175 200 225 250
Maximum Case Temperature (C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
CGH25120F Rev 2.2
CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator R1 R2 C1 C2 C3,C9,C15 C4,C10 C5,C11 C6,C12,C16 C7 C8 C13,C17 C14 J1,J2 J3 -
Description RES, 1/16 W, 0603, 1%, 150 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 6.8 pF, +/-0.25 pF, 0603, ATC600S CAP, 27 pF, +/-5%, 0603, ATC600S CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S CAP, 82.0 pF, +/-5%, 0603, ATC600S CAP, 470 pF, 5%, 100V, 0603, X7R CAP, 33000 pF, 0805, 100V, X7R CAP, 10 UF, 16V, TANTALUM CAP, 24 pF, +/-5%, 0603, ATC600S CAP, 1.0 UF, 100V, 10%, X7R, 1210 CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC CONN, N-Type, Female, 0.500 SMA Flange CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS PCB, RO4350, Er = 3.48, h = 20 mil CGH25120F
Qty 1 1 1 1 3 2 2 3 1 1 2 1 2 1 1 1
CGH25120F-TB Demonstration Amplifier Circuit
CGH25120F Rev 2.2
CGH25120F-TB Demonstration Amplifier Circuit Schematic
CGH25120F-TB Demonstration Amplifier Circuit Outline
CGH25120F Rev 2.2
Typical Package S-Parameters for CGH25120 (Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees)
Frequency 500 MHz 600 MHz 700 MHz 800 MHz 900 MHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz 1.4 GHz 1.5 GHz 1.6 GHz 1.7 GHz 1.8 GHz 1.9 GHz 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.2 GHz 3.4 GHz 3.6 GHz 3.8 GHz 4.0 GHz 4.2 GHz 4.4 GHz 4.6 GHz 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 6.0 GHz Mag S11 0.970 0.969 0.969 0.968 0.967 0.965 0.963 0.961 0.957 0.953 0.948 0.941 0.932 0.921 0.906 0.887 0.863 0.836 0.807 0.782 0.767 0.765 0.772 0.784 0.795 0.802 0.800 0.786 0.824 0.913 0.963 0.983 0.992 0.995 0.997 0.998 0.999 0.999 0.999 0.999 1.000 Ang S11 179.55 178.04 176.68 175.39 174.12 172.86 171.57 170.24 168.86 167.39 165.84 164.19 162.42 160.54 158.55 156.51 154.51 152.72 151.32 150.41 149.70 148.57 146.34 142.57 137.00 129.35 105.38 62.35 -2.68 -61.31 -96.70 -116.99 -129.53 -137.94 -143.97 -148.50 -152.04 -154.90 -157.26 -159.26 -160.97 Mag S21 3.23 2.71 2.35 2.08 1.88 1.73 1.62 1.53 1.47 1.43 1.41 1.40 1.41 1.44 1.49 1.54 1.61 1.68 1.73 1.76 1.74 1.69 1.61 1.52 1.43 1.37 1.29 1.25 1.08 0.73 0.45 0.29 0.19 0.14 0.10 0.08 0.07 0.06 0.05 0.04 0.04 Ang S21 65.19 59.73 54.43 49.24 44.13 39.07 34.02 28.94 23.78 18.47 12.95 7.11 0.85 -5.98 -13.54 -22.02 -31.62 -42.48 -54.61 -67.78 -81.50 -95.15 -108.22 -120.49 -132.07 -143.26 -166.46 164.88 128.15 93.46 69.63 53.87 42.45 33.27 25.19 17.50 9.61 0.93 -9.20 -21.62 -36.99 Mag S12 0.006 0.006 0.006 0.006 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.013 0.013 0.013 0.012 0.012 0.012 0.011 0.011 0.011 0.010 0.007 0.005 0.003 0.002 0.002 0.002 0.001 0.001 0.001 0.001 0.001 0.001 Ang S12 -19.55 -23.92 -28.13 -32.20 -36.17 -40.07 -43.93 -47.79 -51.71 -55.72 -59.92 -64.38 -69.21 -74.56 -80.57 -87.43 -95.34 -104.43 -114.71 -125.92 -137.58 -149.05 -159.82 -169.67 -178.68 172.84 155.52 133.38 103.76 76.68 60.78 53.02 49.41 47.62 46.36 44.82 42.41 38.57 32.67 23.98 11.87 Mag S22 0.697 0.712 0.728 0.744 0.760 0.776 0.792 0.808 0.823 0.838 0.853 0.868 0.882 0.897 0.912 0.928 0.943 0.956 0.966 0.970 0.968 0.960 0.948 0.937 0.926 0.918 0.907 0.901 0.897 0.890 0.881 0.872 0.860 0.844 0.823 0.793 0.751 0.688 0.594 0.453 0.251 Ang S22 -171.85 -171.11 -170.54 -170.15 -169.90 -169.80 -169.82 -169.93 -170.13 -170.41 -170.74 -171.14 -171.61 -172.16 -172.82 -173.62 -174.61 -175.83 -177.27 -178.85 179.58 178.22 177.17 176.41 175.88 175.48 174.80 174.02 172.96 171.72 170.41 168.93 167.19 165.11 162.61 159.54 155.74 150.96 145.02 138.33 136.18
Download this s-parameter file in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp
CGH25120F Rev 2.2
Product Dimensions CGH25120F (Package Type 440162)
10
CGH25120F Rev 2.2
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customers technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639
11
CGH25120F Rev 2.2

Cgh25120F: 120 W, 2300-2700 MHZ, Gan Hemt For Wimax and Lte

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Cgh25120F: 120 W, 2300-2700 MHZ, Gan Hemt For Wimax and Lte

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CGH25120F

120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

Package Type : 440162 PN: CGH2512 0F

Typical Performance Over 2.3-2.7GHz

2.5 GHz 13.1 -32.5 30.0

Subject to change without notice. www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature

Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS

Rating 84 -10, +2 -65, +150 225 30 12 245 80 1.5 -40, +150

Units Volts Volts C C mA A C in-oz C/W C

Units 25C 25C

Electrical Characteristics (TC = 25C)

130 60 12.5 -31 32

CGS CDS CGD

VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz

CGH25120F Rev 2.2

Gain Return Loss

Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance

-40 -45 -50 -55 -60 -65 -70

Output Power (dBm)

CGH25120F Rev 2.2

Drain Efficiency (%)

Return Loss (dB)

Linear Gain (dB)

Typical Pulse Performance

Output Power (dBm) Drain Efiiciency(%)

Input Power (dBm)

Psat Drain Efficiency

Saturated Output Power (dBm)

47 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9

CGH25120F Rev 2.2

Drain Efficiency (%)

Typical Noise Performance

Electrostatic Discharge (ESD) Classifications

Parameter Human Body Model Charge Device Model

Symbol HBM CDM

Class 1A (> 250 V) II (200 < 500 V)

Noise Resistance (Ohms)

CGH25120F Rev 2.2

Source and Load Impedances

Power Dissipation (W)

0 0 25 50 75 100 125 150 175 200 225 250

Maximum Case Temperature (C)

CGH25120F Rev 2.2

CGH25120F-TB Demonstration Amplifier Circuit Bill of Materials

Designator R1 R2 C1 C2 C3,C9,C15 C4,C10 C5,C11 C6,C12,C16 C7 C8 C13,C17 C14 J1,J2 J3 -

CGH25120F-TB Demonstration Amplifier Circuit

CGH25120F Rev 2.2

CGH25120F-TB Demonstration Amplifier Circuit Schematic

CGH25120F-TB Demonstration Amplifier Circuit Outline

CGH25120F Rev 2.2

Download this s-parameter file in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp

CGH25120F Rev 2.2

Product Dimensions CGH25120F (Package Type 440162)

CGH25120F Rev 2.2

CGH25120F Rev 2.2

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