KSB772

KSB772
Audio Frequency Power Amplifier
Low Speed Switching Complement to KSD882

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC Rja Rjc TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature Value - 40 - 30 -5 -3 -7 - 0.6 10 1 132 13.5 150 - 55 ~ 150 Units V V V A A A W W C/W C/W C C

* PW10ms, Duty Cycle50%

Electrical Characteristics TC=25C unless otherwise noted

Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = - 30V, IE = 0 VEB = - 3V, IC = 0 VCE = - 2V, IC = - 20mA VCE = - 2V, IC = - 1A IC = - 2A, IB = - 0.2A IC = - 2A, IB = - 0.2A VCE = - 5V, IE = - 0.1A VCB = - 10V, IE = 0 f = 1MHz 30 60 220 160 - 0.3 - 1.0 80 55 Min. Typ. Max. -1 -1 400 - 0.5 - 2.0 V V MHz pF Units A A

* Pulse Test: PW350s, Duty Cycle2%

hFE Classificntion
Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400

2002 Fairchild Semiconductor Corporation

Rev. B, October 2002

KSB772

Typical Characteristics

-2.0

1000

VCE = -2V

IC[A], COLLECTOR CURRENT

-1.6

-1.2

IB = -8mA IB = -7mA IB = -6mA IB = -5mA

hFE, DC CURRENT GAIN

IB = -10mA IB = -9mA

100

-0.8

IB = -4mA IB = -3mA

10

-0.4

IB = -2mA
IB = -1mA
0 -4 -8 -12 -16 -20

1 -1 -10 -100 -1000 -10000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE

-10000

IC = 10! I B

1000

IE = 0 f=1MHz

-1000

Cob[pF], CAPACITANCE
-100 -1000 -10000

VBE(sat)
-100

100

10

-10

VCE(sat)

-1 -1 -10

1 -1 -10 -100

IC[mA], COLLECTOR CURRENT

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

1000

-10

VCE =5V
IC MAX(Pulse)

10 ms Dis Lim sipat ited ion

1m s

s 0u 10

100

IC[A], COLLECTOR CURRENT

IC MAX(DC)
-1

s/b Lim ite d

10

-0.1

VCEOMAX

1 -0.01

-0.1

-1

-0.01 -1 -10 -100

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Current Gain Bandwidth Product

Figure 6. Safe Operating Area

2002 Fairchild Semiconductor Corporation

Rev. B, October 2002

KSB772

Typical Characteristics (Continued)

160

16

140

14

120

PC[W], POWER DISSIPATION

125 150 175 200

12

dT[%], Ic DERATING

100

10

80

s/b
Di ss

Lim

ited

60

ip a

40

tio n

Li m ite

20

0 25 50
o

0 75 100 25 50
o

75

100

125

150

175

200

TC[ C], CASE TEMPERATURE

TC[ C], CASE TEMPERATURE

Figure 7. Derating Curve of Safe Operating Areas

Figure 8. Power Derating

2002 Fairchild Semiconductor Corporation

Rev. B, October 2002

KSB772

Package Dimensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. B, October 2002

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1

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