Chng 5

Bi tp v BJT
1. Vi cc trng hp sau BJT hot ng min no?
d) PNP: VEB = 0.7V, VCE = 15V
a) NPN: VBE = 2V, VCE = 12V
b) NPN: VBE = 0.7V, VCE = 15V
e) PNP: VBE = 3V, VEC = 10V
c) NPN: VBE = 0.7V, VCE = 0V
f) PNP: VBE = 0.7V, VCE=0V
2. Hy xc nh xem cc BJT trong hnh E1 c phn cc min hot ng no?

Hnh E1
Hnh E2
3. Cho mch hnh E2 phi chn R1 v VCC bng bao nhiu c VCE=4V v IC=1mA, bit VBE=0.7V?
4. Hy tm im lm vic ca cc BJT trong hnh E3? Bit IS=8x1016A (IC = IS exp(VBE/VT)), v =100.

Hnh E3
5. Vi mch hnh E4, hy tm di gi tr ca RB bo m BJT vn ch bo ha khi vin=2V v =50.
(gi s VBEsat=0.8V v VCEsat=0.2V)

Hnh E4

Hnh E5
BT v BJT1

6. Vi hnh E5, hy tm tr ti thiu ca 1 v 2 cho Q1 v Q2 vn ch bo ha khi Vin=5V. Bit

RB=5K, RC1=RC2=2K. (gi s VON(ca diode)=0.7V, VBEsat=0.8V v VCEsat=0.2V)
7. Hy cho bit cc gi tr c c trn cc my o hnh E6.

Hnh E6
Hnh E7
8. Xt mch hnh E7, hy tm gi tr in tr Rb c VC=7.5V, gi s RC=3.3K v =120.

Hnh E8
Hnh E9
Hnh E10
9. Hy tm cc gi tr tham s H ca cu hnh CE cho mch K hnh E8, gi s =100 v VA=150V.
10. Hy tm cc gi tr tham s H ca cu hnh CE cho mch K hnh E9, gi s =100 v VA=150V.
11. Hy tm biu thc ca IO/IREF ca mch gng dng in trong hnh E10, gi s 2 BJT c cng in p Early
VA, Q1 c din tch min pht l AE1, Q2 c din tch min pht l AE2 v cng tr s .
Tnh c th tr s ca IO/IREF cho cc trng hp sau:
a) AE2=5AE1, VA= v =.
b) AE2=2.5AE1, VA= v =120.
c) AE2=2.5AE1, VA=80V v =100.
d) AE2=2AE1, VA=80V v =50.
12. Hy tnh in tr vo ca cc mch sau:

BT v BJT2