P

N
2
2
2
2
A

/

M
M
B
T
2
2
2
2
A

/

P
Z
T
2
2
2
2
A

N
P
N

G
e
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a
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P
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p
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e

A
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2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3 1
August 2010
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
Features
This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
Sourced from process 19.
Absolute Maximum Ratings * T
a
=25C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
a
=25C unless otherwise noted
* Device mounted on FR-4 PCB 1.6 1.6 0.06.
** Device mounted on FR-4 PCB 36mm 18mm 1.5mm; mounting pad for the collector lead min. 6cm
2
.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 75 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current 1.0 A
T
STG
Operating and Storage J unction Temperature Range - 55 ~150 C
Symbol Parameter
Max.
Units
PN2222A *MMBT2222A **PZT2222A
P
D
Total Device Dissipation
Derate above 25C
625
5.0
350
2.8
1,000
8.0
mW
mW/C
R
J C
Thermal Resistance, J unction to Case 83.3 C/W
R
J A
Thermal Resistance, J unction to Ambient 200 357 125 C/W
PN2222A MMBT2222A PZT2222A
E B C
TO-92 SOT-23 SOT-223
Mark:1P
C
B
E
E
B
C
C
P
N
2
2
2
2
A

/

M
M
B
T
2
2
2
2
A

/

P
Z
T
2
2
2
2
A

N
P
N

G
e
n
e
r
a
l

P
u
r
p
o
s
e

A
m
p
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2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3 2
Electrical Characteristics T
a
=25C unless otherwise noted
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
=10mA, I
B
=0 40 V
BV
(BR)CBO
Collector-Base Breakdown Voltage I
C
=10A, I
E
=0 75 V
BV
(BR)EBO
Emitter-Base Breakdown Voltage I
E
=10A, I
C
=0 6.0 V
I
CEX
Collector Cutoff Current V
CE
=60V, V
EB(off)
=3.0V 10 nA
I
CBO
Collector Cutoff Current V
CB
=60V, I
E
=0
V
CB
=60V, I
E
=0, T
a
=125C
0.01
10
A
A
I
EBO
Emitter Cutoff Current V
EB
=3.0V, I
C
=0 10 nA
I
BL
Base Cutoff Current V
CE
=60V, V
EB(off)
=3.0V 20 nA
On Characteristics
h
FE
DC Current Gain I
C
=0.1mA, V
CE
=10V
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=10mA, V
CE
=10V, T
a
=-55C
I
C
=150mA, V
CE
=10V *
I
C
=150mA, V
CE
=1V *
I
C
=500mA, V
CE
=10V *
35
50
75
35
100
50
40
300
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
0.3
1.0
V
V
V
BE(sat)
Base-Emitter Saturation Voltage * I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
0.6 1.2
2.0
V
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
=20mA, V
CE
=20V, f =100MHz 300 MHz
C
obo
Output Capacitance V
CB
=10V, I
E
=0, f =1MHz 8.0 pF
C
ibo
Input Capacitance V
EB
=0.5V, I
C
=0, f =1MHz 25 pF
rbC
c
Collector Base Time Constant I
C
=20mA, V
CB
=20V, f =31.8MHz 150 pS
NF Noise Figure I
C
=100A, V
CE
=10V,
R
S
=1.0K, f =1.0KHz
4.0 dB
Re(h
ie
) Real Part of Common-Emitter
High Frequency Input Impedance
I
C
=20mA, V
CE
=20V, f =300MHz 60
Switching Characteristics
t
d
Delay Time V
CC
=30V, V
EB(off)
=0.5V,
I
C
=150mA, I
B1
=15mA
10 ns
t
r
Rise Time 25 ns
t
s
Storage Time V
CC
=30V, I
C
=150mA,
I
B1
=I
B2
=15mA
225 ns
t
f
Fall Time 60 ns
P
N
2
2
2
2
A

/

M
M
B
T
2
2
2
2
A

/

P
Z
T
2
2
2
2
A

N
P
N

G
e
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2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h




-

T
Y
P
I
C
A
L

P
U
L
S
E
D

C
U
R
R
E
N
T

G
A
I
N
C
F
E
125 C
25 C
- 40 C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V









-

C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
C
E
S
A
T
25
C
= 10
125
- 40
C
C
C
Base-Emi t t er Sat ur at i on
Vol t age vs Col l ect or Cur r ent
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V








-

B
A
S
E
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
B
E
S
A
T
C
= 10
25
125
- 40 C
C
C
I
C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V









-

B
A
S
E
-
E
M
I
T
T
E
R

O
N

V
O
L
T
A
G
E

(
V
)
B
E
(
O
N
)
C
V = 5V
CE
25 C
125 C
- 40 C
I
C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I






-

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(
n
A
)
A
V = 40V
CB
C
B
O

Emitter Transition and Output

Capacitance vs Reverse Bias Voltage
0.1 1 10 100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
f = 1 MHz
C
ob
C
te
P
N
2
2
2
2
A

/

M
M
B
T
2
2
2
2
A

/

P
Z
T
2
2
2
2
A

N
P
N

G
e
n
e
r
a
l

P
u
r
p
o
s
e

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2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3 4
Typical Performance Characteristics (Continued)
Figure 7. Turn On and Turn Off Times
vs Collector Current
Figure 8. Switching Times vs Collector Current
Figure 9. Power Dissipation vs
Ambient Temperature
Figure 10. Common Emitter Characteristics
Figure 11. Common Emitter Characteristics Figure 12. Common Emitter Characteristics
Turn On and Turn Off Times
vs Collector Current
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
T
I
M
E


(
n
S
)
I = I =
t
on
t
off
B1
C
B2
I
c
10
V = 25 V
cc
I
C
Switching Times
vs Collector Current
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
T
I
M
E


(
n
S
)
I = I =
t
r
t
s
B1
C
B2
I
c
10
V = 25 V
cc
t
f
t
d
I
C
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P



-

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

(
W
)
D
o
SOT-223
TO-92
SOT-23
Common Emitter Characteristics
0 10 20 30 40 50 60
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
C
H
A
R
.

R
E
L
A
T
I
V
E

T
O

V
A
L
U
E
S

A
T

I


=

1
0
m
A
V = 10 V
CE
C
C
T = 25 C
A
o
hoe
h re
h fe
h ie
Common Emitter Characteristics
0 20 40 60 80 100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBIENT TEMPERATURE ( C)
C
H
A
R
.

R
E
L
A
T
I
V
E

T
O

V
A
L
U
E
S

A
T

T


=

2
5

C
V = 10 V
CE
A
A
I = 10 mA
C
hoe
hre
hfe
hie
o
o
Common Emitter Characteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLLECTOR VOLTAGE (V)
C
H
A
R
.

R
E
L
A
T
I
V
E

T
O

V
A
L
U
E
S

A
T

V



=

1
0
V
CE
C
E
T = 25 C
A
o
hoe
h re
h fe
h
ie
I = 10 mA
C
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Rev. I49