Philips Semiconductors Linear Products

Product specification

Function generator

NE/SE566

DESCRIPTION

PIN CONFIGURATIONS

The NE/SE566 Function Generator is a voltage-controlled oscillator

of exceptional linearity with buffered square wave and triangle wave
outputs. The frequency of oscillation is determined by an external
resistor and capacitor and the voltage applied to the control terminal.
The oscillator can be programmed over a ten-to-one frequency
range by proper selection of an external resistance and modulated
over a ten-to-one range by the control voltage, with exceptional
linearity.

D, N Packages
GROUND 1

NC 2

C1

SQUARE WAVE OUTPUT 3

R1

TRIANGLE WAVE OUTPUT 4

MODULATION INPUT

V+

TOP VIEW

FEATURES

Wide range of operating voltage (up to 24V; single or dual)

High linearity of modulation
Highly stable center frequency (200ppm/C typical)
Highly linear triangle wave output
Frequency programming by means of a resistor or capacitor,

APPLICATIONS

Tone generators
Frequency shift keying
FM modulators
Clock generators
Signal generators
Function generators

voltage or current

Frequency adjustable over 10-to-1 range with same capacitor

ORDERING INFORMATION
TEMPERATURE RANGE

ORDER CODE

DWG #

8-Pin Plastic Small Outline (SO) Package

DESCRIPTION

0 to +70C

NE566D

0174C

14-Pin Ceramic Dual In-Line Package (CERDIP)

0 to +70C

NE566F

0581B

8-Pin Plastic Dual In-Line Package (DIP)

0 to +70C

NE566N

0404B

8-Pin Plastic Dual In-Line Package (DIP)

-55C to +125C

SE566N

0404B

BLOCK DIAGRAM
V+
R1
6
VC

MODULATION 5
INPUT

8
SCHMITT
TRIGGER

CURRENT
SOURCES

BUFFER
AMPLIFIER 3

4
BUFFER
AMPLIFIER
7
C1

April 15, 1992

398

853-0910 06454

Philips Semiconductors Linear Products

Product specification

Function generator

NE/SE566

EQUIVALENT SCHEMATIC
6

R1
(EXTERNAL)

8
V+

5
VC

C1
(EXTER
NAL)

5k

1
GROUND

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RATING

UNIT

V+

Maximum operating voltage

26

VIN, VC

Input voltage

VP-P

TSTG

Storage temperature range

-65 to +150

TA

Operating ambient temperature range

NE566

0 to +70

SE566

-55 to +125

300

mW

PD

April 15, 1992

Power dissipation

399

Philips Semiconductors Linear Products

Product specification

Function generator

NE/SE566

DC ELECTRICAL CHARACTERISTICS
TA=25C, VCC=6V, unless otherwise specified.
SYMBOL

PARAMETER

SE566
Min

Typ

NE566
Max

Min

Typ

Max

UNIT

General
C

TA

Operating ambient temperature range

-55

125

70

VCC

Operating supply voltage

12

12

ICC

Operating supply current

12.5

mA

Maximum operating frequency

12.5

VCO1
fMAX

Frequency drift with temperature

500

Frequency drift with supply voltage

0.1

Control terminal input impedance2

FM distortion (10% deviation)

0.2

Maximum sweep rate

Sweep range

MHz

600
1

0.2

ppm/C
2

1
0.75

0.4

10:1

10:1

%/V
M

1.5

%
MHz

Output
Triangle wave output
impedance
voltage

50
1.9

linearity

2.4

1.9

0.2

50

2.4

VP-P

0.5

Square wave input

impedance

50

5.4

VP-P

40

50

50

voltage

5.4

duty Cycle

45

50

55

60

tR

Rise time

20

20

ns

tF

Fall Time

50

50

ns

NOTES:
1. The external resistance for frequency adjustment (R1) must have a value between 2k and 20k.
2. The bias voltage (VC) applied to the control terminal (Pin 5) should be in the range V+VCV+.

April 15, 1992

400

Philips Semiconductors Linear Products

Product specification

Function generator

NE/SE566

TYPICAL PERFORMANCE CHARACTERISTICS

Normalized Frequency as a
Function of Control Voltage

Normalized Frequency as a
Function of Resistance (R1)

2.5
RESISTANCE (R1 ) (K )

1.5
1.0

0.5

0.5

1.0

1.5

2.0

2.5

V+ = 12 VOLTS
VC = 10 VOLTS

50

20
10
5

2
1
0.1

3.0

CONTROL VOLTAGE
(BETWEEN PIN 8 AND PIN 5) VOLTS

10

Rt = 4k

MAXIMUM

TYPICAL

15.0
12.5
10.0

V+ = 12 VOLTS
VC = 10 VOLTS
R1 = 4k

1.0
0.1

0.01

0.001

7.5
5

+0.5

TYPICAL

0.5
1.0
1.5
2.0

2.5
75 50 25

+25 +50 +75 +100 +125

TEMPERATURE (oC)

10

CAPACITANCE
1 (C )

SUPPLY CURRENT mA

+1.0

Frequency as a Function
of Capacitance (C1)

20.0
17.5

0.5

+1.5

NORMALIZED FREQUENCY

Power Supply Current as a

Function of Supply Voltage

0.2

V+ = 12 VOLTS
VC = 10 VOLTS

+2.0

VCO Output Waveforms

OUTPUT 3 V OUTPUT PIN 4 V

NORMALIZED FREQUENCY

V+ = 12 VOLTS

+2.5
CHANGE IN FREQUENCY (%)

100

2.0

Change in Frequency as a
Function of Temperature

V+ = 12 VOLTS

5
4

12
10
8
6
4

0.0001
10

13

16

19

22

25

10

SUPPLY VOLTAGE V

102

OPERATING INSTRUCTIONS

104

105

fO +

The NE/SE566 Function Generator is a general purpose

voltage-controlled oscillator designed for highly linear frequency
modulation. The circuit provides simultaneous square wave and
triangle wave outputs at frequencies up to 1MHz. A typical
connection diagram is shown in Figure 1. The control terminal (Pin
5) must be biased externally with a voltage (VC) in the range

106

2 [(V )) * (V C)]
R1 C1 V )

and R1 should be in the range 2k< R1<20k.

A small capacitor (typically 0.001F) should be connected between
Pins 5 and 6 to eliminate possible oscillation in the control current
source.

V+VCV+

If the VCO is to be used to drive standard logic circuitry, it may be

desirable to use a dual supply as shown in Figure 2. In this case the
square wave output has the proper DC levels for logic circuitry. RTL
can be driven directly from Pin 3. For DTL or TTL gates, which
require a current sink of more than 1mA, it is usually necessary to
connect a 5k resistor between Pin 3 and negative supply. This
increases the current sinking capability to 2mA. The third type of

where VCC is the total supply voltage. In Figure 1, the control

voltage is set by the voltage divider formed with R2 and R3. The
modulating signal is then AC coupled with the capacitor C2. The
modulating signal can be direct coupled as well, if the appropriate
DC bias voltage is applied to the control terminal. The frequency is
given approximately by

April 15, 1992

103

FREQUENCY Hz

401

Philips Semiconductors Linear Products

Product specification

Function generator

NE/SE566

interface shown uses a saturated transistor between the 566 and

the logic circuitry. This scheme is used primarily for TTL circuitry
which requires a fast fall time (<50ns) and a large current sinking
capability.

1.5K

V+
R2
1.5K

C2
R3
10K

.001F

5K

R1
RTL
10K

.001F

R1
10K

84
5 6
VC
SE/NE 566
7
1 3

3
VC 5
SE/NE 566
4
7
1
5K

C1
6 VOLTS

C1

Figure 2.
Figure 1.

April 15, 1992

402

DTL
&
T 2L

DTL OR T2L
WITH FAST
FALL TIME

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