A733

PNP Epitaxial Silicon Transistor

Elite Enterprises (H.K.) Co., Ltd. Part No.: A733
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Page: 1 / 1



LOW FREQUENCY AMPLIFIER


Collector-Emitter Voltage: V
CEO
=-50V
Collector Dissipation: P
C
(max)=250mW


Absolute Maximum Ratings (TA=25
o
C)
Characteristic Symbol Rating Unit
Collector-Base Voltage V
CBO
-60 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current I
C
-150 mA
Collector Dissipation P
C
250 mW
Junction Temperature T
J
150
o
C
Storage Temperature T
STG
-55~+150
o
C



Electrical Characteristics (TA=25
o
C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BV
CBO
I
C
= -5A, I
E
=0 -60 V
Collector-Emitter Breakdown Voltage BV
CEO
I
C
= -1mA, I
B
=0 -50 V
Emitter-Base Breakdown Voltage BV
EBO
I
E
= -50A, I
C
=0 -5 V
Collector Cut-off Current I
CBO
V
CB
= -60V, I
E
=0 0.1 A
Emitter Cut-off Current I
EBO
V
EB
= -5V, I
C
=0 01 A
DC Current Gain h
FE
V
CE
= -6V, I
C
= -1mA 90 200 600
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= -100mA, I
B
= -10mA -0.18 -0.3 V
Transition Frequency f
T
V
CE
= -6V, I
C
= -10mA
f= 30MHz 50 180 MHz



h
FE
CLASSIFICATION
Classification R Q P K
h
FE
90-180 135-270 200-400 300-600