SEMICONDUCTOR

TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURES
Complementary to KTA1273.
B

KTC3205
EPITAXIAL PLANAR NPN TRANSISTOR

P DEPTH:0.2 C

MAXIMUM RATING (Ta=25)

CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 30 5 2 -2 1 150 -55150 UNIT V V V
O

Q K

DIM A B C D E F G H J K L M N O P Q R S

MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4

G J
F H M E F H M L

A A W

1 N

3 N

1. EMITTER 2. COLLECTOR 3. BASE

25 1.25 1.50 0.10 MAX _ 0.50 12.50 + 1.00

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25)

CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification 0:100200, SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Cob Y:160320 TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=0.03A VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz MIN. 30 5 100 TYP. 120 13 MAX. 100 100 320 2.0 1.0 V V MHz pF UNIT nA nA V V

1996. 9. 14

Revision No : 1

1/2

KTC3205

I C - VCE
COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE 1600 1400 1200 1000 800 600 400 200 0 0 2 4 6 8
4 3 2 I B=1mA 0 10 8 6 COMMON EMITTER Ta=25 C

h FE - IC
2k 1k 500 300 100 50 30 10
Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER VCE =2V

10

30

100

300

1k

5k

COLLECTOR CURRENT I C (mA) 10 12 14

COLLECTOR-EMITTER VOLTAGE V CE (V)

I C - V BE
COLLECTOR CURRENT I C (mA) 1600 1400 1200 1000 800 600 400 200 0 0 5k 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE-EMITTER VOLTAGE V BE (V) 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)

VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3
Ta=-25 C Ta=25 C Ta=100 C COMMON EMITTER I C /I B =50

COMMON EMITTER VCE =2V

0.1 0.05 0.03

0.01

SAFE OPERATING AREA Pc - Ta

COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION Pc (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 10 5 3 1 0.5 0.3 0.1 0.05 0.03
I C MAX.(PULSED) I C MAX. (CONTINUOUS)
DC

C Ta=25 C Ta=-25 C
*

Ta=100

10

1S

0m

10

1m S*
*

S*

mS

OP Ta ERA =2 5 TIO N C

20

40

60

80

100

120

140

160

0.01 0.3 0.5

10

VCEO MAX.

* SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE

30

50

AMBIENT TEMPERATURE Ta ( C)

COLLECTOR-EMITTER VOLTAGE V CE (V)

1996. 9. 14

Revision No : 1

2/2

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