SEMICONDUCTOR

KRC110M~KRC114M

TECHNICAL DATA

EPITAXIAL PLANAR PNP TRANSISTOR

SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B

FEATURES
A

With Built-in Bias Resistors.

Simplify Circuit Design.

Reduce a Quantity of Parts and Manufacturing Process.

EQUIVALENT CIRCUIT
E

R1

DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_ 0.15
D
2.40 +
E
1.27
F
2.30
_ 0.50
G
14.00+
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75

1. EMITTER
2. COLLECTOR
3. BASE

TO-92M

MAXIMUM RATING (Ta=25)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

50

Collector-Emitter Voltage

VCEO

50

Emitter-Base Voltage

VEBO

Collector Current

IC

100

mA

Collector Power Dissipation

PC

400

mW

Junction Temperature

Tj

150

Tstg

-55150

Storage Temperature Range

1998. 7. 8

Revision No : 3

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KRC110M~KRC114M
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=50V, IE=0

100

nA

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

100

nA

DC Current Gain

hFE

VCE=5V, IC=1mA

120

IC=10mA, IB=0.5mA

0.1

0.3

VCE=10V, IC=5mA

250

MHz

KRC110M

4.7

KRC111M

10

100

KRC113M

22

KRC114M

47

KRC110M

0.025

KRC111M

0.03

0.3

KRC113M

0.06

KRC114M

0.11

KRC110M

3.0

VO=5V

2.0

VIN=5V

6.0

RL=1k

4.0

KRC114M

5.0

KRC110M

0.2

KRC111M

0.12

2.0

KRC113M

0.9

KRC114M

1.4

Collector-Emitter Saturation Voltage

fT *

Transition Frequency

Input Resistor

KRC112M

Rise
Time

VCE(sat)

KRC112M

R1

tr

KRC111M
Switching

Storage

Time

Time

KRC112M

tstg

KRC113M

Fall
Time

KRC112M

tf

Note : * Characteristic of Transistor Only.

1998. 7. 8

Revision No : 3

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KRC110M~KRC114M

V CE(sat) - I C

h FE - I C
KRC110M

COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)

DC CURRENT GAIN h FE

2k
1k
500
300

Ta=100 C
Ta=25 C
Ta=-25 C

100
50
30
VCE =5V

10
0.1

0.3

10

30

100

KRC110M
IC /I B =20

1
0.5
0.3

0.1
Ta=100 C

0.05
0.03

Ta=25 C
Ta=-25 C

0.01
0.1

COLLECTOR CURRENT I C (mA)

0.3

KRC111M

COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)

DC CURRENT GAIN h FE

1k
Ta=100 C
Ta=25 C
Ta=-25 C

50
30
V CE =5V

10
0.1

0.3

10

30

100

0.1
Ta=100 C

0.05
0.03

Ta=25 C
Ta=-25 C

0.01
0.1

0.3

COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)

DC CURRENT GAIN h FE

Ta=100 C
Ta=25 C
Ta=-25 C

50
30
V CE =5V

10
0.3

10

30

COLLECTOR CURRENT I C (mA)

1998. 7. 8

10

VCE(sat) - I C

1k

0.1

100

0.5
0.3

COLLECTOR CURRENT I C (mA)

KRC112M

100

30

IC /I B =20

h FE - I C

500
300

100

KRC111M

COLLECTOR CURRENT I C (mA)

2k

30

VCE(sat) - I C

2k

100

10

COLLECTOR CURRENT I C (mA)

h FE - I C

500
300

Revision No : 3

100

KRC112M
I C /I B =20

1
0.5
0.3
0.1

Ta=100 C

0.05
0.03

Ta=25 C
Ta=-25 C

0.01
0.1

0.3

10

30

100

COLLECTOR CURRENT I C (mA)

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KRC110M~KRC114M

VCE(sat) - I C

h FE - I C

500
300

Ta=100 C
Ta=25 C
Ta=-25 C

100
50
30

V CE =5V

10
0.1

2k
DC CURRENT GAIN h FE

COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)

1k

0.3

10

30

I C /I B =20

1
0.5
0.3

0.1
Ta=100 C

0.05
0.03

Ta=25 C
Ta=-25 C

0.01
0.3

10

30

COLLECTOR CURRENT I C (mA)

COLLECTOR CURRENT I C (mA)

h FE - I C

V CE(sat) - I C

1k
500
300

Ta=100 C
Ta=25 C
Ta=-25 C

100
50
30

VCE =5V

10
0.3

10

30

COLLECTOR CURRENT I C (mA)

1998. 7. 8

KRC113M

0.1

KRC114M

0.1

100

COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)

DC CURRENT GAIN h FE

2k

KRC113M

Revision No : 3

100

100

KRC114M
I C /I B =20

1
0.5
0.3

0.1
Ta=100 C

0.05
0.03

Ta=25 C
Ta=-25 C

0.01
0.1

0.3

10

30

100

COLLECTOR CURRENT I C (mA)

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