2/7/2000

V
CES
= 1200V
V
CE(on) typ.
= 2.74V
@V
GE
= 15V, I
C
= 15A
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25C Continuous Collector Current 30
I
C
@ T
C
= 100C Continuous Collector Current 15 A
I
CM
Pulsed Collector Current Q 60
I
LM
Clamped Inductive Load Current R 60
t
sc
Short Circuit Withstand Time 10 s
V
GE
Gate-to-Emitter Voltage 20 V
E
ARV
Reverse Voltage Avalanche Energy S 180 mJ
P
D
@ T
C
= 25C Maximum Power Dissipation 160 W
P
D
@ T
C
= 100C Maximum Power Dissipation 65
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
IRG4PH40K
Short Circuit Rated
UltraFast IGBT
lNSULATED GATE 8lPCLAP TPANSlSTCP
PD - T5788
Parameter Typ. Max. Units
R
JC
Junction-to-Case 0.77
R
CS
Case-to-Sink, Flat, Greased Surface 0.24 C/W
R
JA
Junction-to-Ambient, typical socket mount 40
Wt Weight 6 (0.21) g (oz)
Thermal Resistance
TO-247AC
Features Features Features Features Features
Benefits
E
C
G
n-channel
High short circuit rating optimized for motor control,
t
sc
=10s, V
CC
= 720V , T
J
= 125C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBT's offer highest power
density motor controls possible
This part replaces the IRGPH40K and IRGPH40M
devices
www.irf.com 1
IRG4PH40K
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 V V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 V V
GE
= 0V, I
C
= 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.37 V/C V
GE
= 0V, I
C
= 1.0mA
2.54 I
C
= 10A
2.74 3.4 I
C
= 15A V
GE
= 15V
3.29 I
C
= 30A See Fig.2, 5
2.53 I
C
= 15A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage -3.3 mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance U 8.0 12 S V
CE
= 100 V, I
C
= 15A
250 V
GE
= 0V, V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current 2.0 A V
GE
= 0V, V
CE
= 10V, T
J
= 25C
3000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current 100 nA V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
V V
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note Q through U are on the last page
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 94 140 I
C
= 15A
Q
ge
Gate - Emitter Charge (turn-on) 14 22 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) 37 55 V
GE
= 15V
t
d(on)
Turn-On Delay Time 30
t
r
Rise Time 22 T
J
= 25C
t
d(off)
Turn-Off Delay Time 200 300 I
C
= 15A, V
CC
= 960V
t
f
Fall Time 150 230 V
GE
= 15V, R
G
= 10
E
on
Turn-On Switching Loss 0.73 Energy losses include "tail"
E
off
Turn-Off Switching Loss 1.66 mJ See Fig. 9,10,14
E
ts
Total Switching Loss 2.39 2.9
t
sc
Short Circuit Withstand Time 10 s V
CC
= 720V, T
J
= 125C
V
GE
= 15V, R
G
= 10
t
d(on)
Turn-On Delay Time 29 T
J
= 150C,
t
r
Rise Time 24 I
C
= 15A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time 870 V
GE
= 15V, R
G
= 10
t
f
Fall Time 330 Energy losses include "tail"
E
ts
Total Switching Loss 4.93 mJ See Fig. 10,11,14
E
on
Turn-On Switching Loss 0.37 T
J
= 25C, V
GE
= 15V, R
G
= 10
E
off
Turn-Off Switching Loss 0.89 mJ I
C
= 10A, V
CC
= 960V
E
ts
Total Switching Loss 1.26 Energy losses include "tail"
L
E
Internal Emitter Inductance 13 nH Measured 5mm from package
C
ies
Input Capacitance 1600 V
GE
= 0V
C
oes
Output Capacitance 77 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 26 = 1.0MHz
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
IRG4PH40K
www.irf.com 3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I



,


C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
CE
C

V = 15V
20s PULSE WIDTH
GE
T = 25 C
J

T = 150 C
J

0
10
20
30
40
50
0. 1 1 10 100
f, Frequency (kHz)
A
60 % of rat ed
v olt ag e
I
Ideal di odes
Squ are wave:
F or bot h:
Duty cycle: 50%
T = 125 C
T = 90C
Gat e dr ive as specified
sink
J
Tr i an gu la r wa ve:
I
C l amp vo l ta ge:
80 % o f r ate d
Po wer D i s s ip at i on = 35 W
L
o
a
d

C
u
r
r
e
n
t

(

A

)
1
10
100
4 6 8 10 12 14
V , Gate-to-Emitter Voltage (V)
I



,


C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
GE
C

V = 50V
5s PULSE WIDTH
CC
T = 25 C
J

T = 150 C
J

IRG4PH40K
4 www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25 50 75 100 125 150
0
5
10
15
20
25
30
T , Case Temperature ( C)
M
a
x
i
m
u
m

D
C

C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
(
A
)
C

0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1

Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C

P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

(
Z








)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50

SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20 0 20 40 60 80 100 120 140 160
2.0
2.5
3.0
3.5
4.0
T , Junction Temperature ( C)
V





,

C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
(
V
)
J

C
E

V = 15V
80 us PULSE WIDTH
GE
I = A 30
C
I = A 15
C
I = A 7.5
C
IRG4PH40K
www.irf.com 5
0 10 20 30 40 50
2.0
2.5
3.0
3.5
4.0
R , Gate Resistance (Ohm)
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
G

V = 960V
V = 15V
T = 25 C
I = 15A
CC
GE
J
C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0 20 40 60 80 100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V





,

G
a
t
e
-
t
o
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e

(
V
)
G
G
E

V = 400V
I = 15A
CC
C
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
J

R = Ohm
V = 15V
V = 960V
G
GE
CC
I = A 30
C
I = A 15
C
I = A 7.5
C
10
1 10 100
0
500
1000
1500
2000
2500
V , Collector-to-Emitter Voltage (V)
C
,

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
C
res
C
oes
C
ies
R
G
, Gate Resistance ( )
IRG4PH40K
6 www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
0 5 10 15 20 25 30
0
3
6
9
12
15
I , Collector-to-emitter Current (A)
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
C

R = Ohm
T = 150 C
V = 960V
V = 15V
G
J
CC
GE

1
10
100
1 10 100 1000 10000

V = 20V
T = 125 C
GE
J
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I



,


C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
CE
C
10
IRG4PH40K
www.irf.com 7
960V
4 X IC@25C
D.U.T.
50V
L
V *
C
Q
R
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated I d.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480F
960V
0 - 960V
R
L
=



t=5s d(o n )
t
t
f t r
90%
t
d (of f)
10%
90%
10%
5%
V
C
I
C
E
o n
Eo f f
ts o n o ff
E = (E +E )
Q
R
S
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
Q
R S
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 960V
IRG4PH40K
8 www.irf.com
Case Outline and Dimensions TO-247AC
Dime n si on s i n Mi ll ime t e rs a n d (I n ch es )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5 .30 ( .20 9)
4 .70 ( .18 5)
3. 65 ( .1 43 )
3. 55 ( .1 40 )
2.50 ( . 089)
1.50 ( . 059)
4
3X
0.80 ( .03 1)
0.40 ( .01 6)
2 .60 ( .10 2)
2 .20 ( .08 7)
3. 40 ( .1 3 3)
3. 00 ( .1 1 8)
3 X
0.25 ( . 010) M C A S
4.30 ( .1 70)
3.70 ( .1 45)
- C -
2X
5.5 0 ( .2 17)
4.5 0 ( .1 77)
5.5 0 ( .2 17)
0. 25 ( .01 0)
1.40 ( . 056)
1.00 ( . 039)
D M M B
- A -
15 .90 ( .6 26)
15 .30 ( .6 02)
- B -
1 2 3
20 .30 (.8 00)
19 .70 (.7 75)
14 .80 ( . 583 )
14 .20 ( . 559 )
2. 40 ( .094)
2. 00 ( .079)
2 X
2 X
5. 45 ( .2 15 )
*
NOTES:
1 DIMENSIONS & T OLERANCING
PER ANSI Y14.5M, 1982.
2 CONTR OLLIN G DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETER S (IN CHES).
4 CONFORMS TO JEDEC OUTLINE
T O-247AC .
LEAD ASSIGNMENT S
1 - GAT E
2 - COLLECTOR
3 - EMIT TER
4 - COLLECTOR
*
LONGER LEADED (20m m)
VERSION AVAILABLE ( TO- 247AD)
T O ORDER ADD "-E" SU FF IX
T O PART NUMBER
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80s; duty factor 0.1%.
U Pulse width 5.0s, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 10,
(See fig. 13a)
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Data and specifications subject to change without notice. 6/00
This datasheet has been download from:
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Datasheets for electronics components.