APPROVED VENDOR SPECI FI CATI ON

Vendor Name : ADVANCED POWER ELECTRONI CS CORP.

Catalog Date / Revision : N/ A
Catalog Name : N/ A
CHANGE : ADD NEW P/ N 21700400250 & NEW SPEC (SH9) I N DWG
REMARK :
ECO #
I SSUE:
02
CHECK:
DATE:
APPROVED:
DATE: DATE: 12/ 4/ 2003
PREPARED BY: CHERRY
Drawing No: 217-70400030-02
Page 1 of 9
2003.
12.10
03:07
:04 Z
Ivan Au
2003.12.11 09:46:57 +08'00'
Astec Custom Power
HK Document Control
CONTROLLED
Date Issued
12/15/2003
Astec Custom Power
HK Document Control
CONTROLLED
Date Issued
12/16/2003
Astec Custom Power
HK Document Control
CONTROLLED
Date Issued
12/17/2003
Astec Custom Power
HK Document Control
CONTROLLED
Date Issued
12/18/2003
APPROVED VENDOR SPECIFICATION
Part Number Vendor Part Number First Used On Description
217-70400030 FET-N 9A 700 V AP09N70P-H AP09N70P-H EV22640
217-00400250 FET-N 9A 650 V AP09N70P-A AP09N70P-A AA23440
Drawing No: 217-70400030-02
Page 2 of 9
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Dynamic dv/dt Rating BV
DSS

Repetitive Avalanche Rated R
DS(ON)
0.75
Fast Switching I
D
9A
Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25 Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100 Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25 Total Power Dissipation W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG

T
J
Operating Junction Temperature Range
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 0.8 /W
Rthj-a Thermal Resistance Junction-ambient Max. 62 /W
Data & specifications subfect to change without notice
AP09N70P/R
Rating
600/650/700
9
40
156
9
5
305
1.25
-55 to 150
Parameter
Parameter
Linear Derating Factor
- /A/H
9
Storage Temperature Range -55 to 150
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and
TO-262 type provide high blocking voltage to overcome voltage surge and
sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.

20
G
D
S TO-262
G
D
S
TO-220
Drawing No: 217-70400030-01 Page 3 of 8
Drawing No: 217-70400030-02
Page 3 of 9
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA / - 600 - - V
V
GS
=0V, I
D
=250uA / A 650 - - V
V
GS
=0V, I
D
=250uA / H 700 - - V
BV
DSS
/T
j
Breakdown Voltage Temperature Coefficient Reference to 25, I
D
=1mA - 0.6 - V/
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=10V, I
D
=4.5A - - 0.75
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250uA 2 - 4 V
g
fs
Forward Transconductance V
DS
=10V, I
D
=4.5A - 4.5 - S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C) V
DS
=600V, V
GS
=0V - - 10 uA
Drain-Source Leakage Current (T
j
=150
o
C) V
DS
=480V
,
V
GS
=0V - - 100 uA
I
GSS Gate-Source Leakage V
GS
= - - nA
Q
g
Total Gate Charge
3
I
D
=9A - 44 - nC
Q
gs
Gate-Source Charge V
DS
=480V - 11 - nC
Q
gd
Gate-Drain ("Miller") Charge V
GS
=10V - 12 - nC
t
d(on)
Turn-on Delay Time
3
V
DD
=300V - 19 - ns
t
r
Rise Time I
D
=9A - 21 - ns
t
d(off)
Turn-off Delay Time R
G
=10,V
GS
=10V - 56 - ns
t
f
Fall Time R
D
=34 - 24 -
ns
C
iss
Input Capacitance V
GS
=0V - 2660 - pF
C
oss
Output Capacitance V
DS
=25V - 170 - pF
C
rss
Reverse Transfer Capacitance f=1.0MHz - 10 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode ) V
D
=V
G
=0V , V
S
=1.5V - - 9 A
I
SM
Pulsed Source Current ( Body Diode )
1
- - 40 A
V
SD
Forward On Voltage
3
T
j
=25, I
S
=9A, V
GS
=0V - - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=6.8mH , R
G
=25 , I
AS
=9A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP09N70P- X : X Denote BV
DSS
Grade
Blank = BV
DSS
600V
A = BV
DSS
650V
H = BV
DSS
700V
AP09N70P
100
30V
Drawing No: 217-70400030-01 Page 4 of 8
Drawing No: 217-70400030-02
Page 4 of 9
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BV

v.s. 1unction Fig 4. Normalized On-Resistance

Temperature v.s. 1unction Temperature
AP09N70P/R
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
T
j
, Junction Temperature (
o
C)
N
o
r
m
a
l
i
z
e
d

B
V
D
S
S

(
V
)

V
DS
, Drain-to-Source Voltage (V)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
T
C
=25
o
C
V
G
=6.0V
V
G
=5.0V
V
G
=4.5V
V
G
=4.0V
V
G
=3.5V
V
G
=10V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
T
j
, Junction Temperature (
o
C )
N
o
r
m
a
l
i
z
e
d

R
D
S
(
O
N
)
V
G
=10V
I
D
=4.5A
0
2
4
6
8
10
0 4 8 12 16 20 24
V
DS
, Drain-to-Source Voltage (V)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
T
C
=150
o
C
V
G
=6.0V
V
G
=5.0V
V
G
=4.5V
V
G
=4.0V
V
G
=3.5V
V
G
=10V
Drawing No: 217-70400030-01 Page 5 of 8
Drawing No: 217-70400030-02
Page 5 of 9
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP09N70P/R
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
N
o
r
m
a
l
i
z
e
d

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

(
R
t
h
j
c
)
P
Duty factor t/T
Peak T P x R + T

0.02
0.01
0.05
0.1
0.2
DUTY0.5
SINGLE PULSE
0
1
2
3
4
5
6
7
8
9
10
25 50 75 100 125 150
T
c
, Case Temperature ( C)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
0
50
100
150
0 50 100 150
Tc , Case Temperature(
o
C)
P
D

(
W
)
0.1
1
10
100
1 10 100 1000 10000
V
DS
(V)
I
D
(
A
)
D=0.01 T
c
=25
o
C
10us
100us
1ms
10ms
100ms
Drawing No: 217-70400030-01 Page 6 of 8
Drawing No: 217-70400030-02
Page 6 of 9
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode 1unction Temperature
AP09N70P/R
0
1
2
3
4
5
-50 0 50 100 150
T
j
, Junction Temperature (
o
C)
V
G
S
(
t
h
)

(
V
)
0
2
4
6
8
10
12
14
16
0 10 20 30 40 50 60 70
Q
G
, Total Gate Charge (nC)
V
G
S

,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
I
D
=9A
V
DS
=320V
V
DS
=400V
V
DS
=480V
1
100
10000
1 5 9 13 17 21 25 29
V
DS
(V)
C

(
p
F
)

Ciss
Coss
Crss
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
SD
(V)
I
S

(
A
)
T
j
= 150
o
C
T
j
= 25
o
C
Drawing No: 217-70400030-01 Page 7 of 8
Drawing No: 217-70400030-02
Page 7 of 9
AP09N70P/R
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off) t
f
V
DS
V
GS
10
90
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0.5x RATED V

TO THE
OSCILLOSCOPE
-

10V
D
G
S
V

0.8 x RATED V

TO THE
OSCILLOSCOPE

D
G
S
V

1~ 3 mA
Drawing No: 217-70400030-01 Page 8 of 8
Drawing No: 217-70400030-02
Page 8 of 9
Drawing No: 217-70400030-02
Page 9 of 9