Equivalent circuit

Built-in Avalanche Diode for Surge Absorbing Darlington

2SD2141
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=0.5A VCB=10V, f=1MHz Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF
13.0min

(1.5k)(100) E

Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 38050 38050 6 6(Pulse10) 1 35(Tc=25C) 150 55 to +150 Unit V V V A A W C C

Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
(Ta=25C) Unit

External Dimensions FM20(TO220F)

4.00.2 10.10.2 4.20.2 2.8 c0.5

A
V
16.90.3 8.40.2

mA

1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54

3.9 B C E

0.2

0.80.2

a b

3.30.2

Weight : Approx 2.0g a. Part No. b. Lot No.

I C V CE Characteristics (Typical)
10
0 15 m

V CE ( sat ) I B Characteristics (Typical)

3

I C V BE Temperature Characteristics (Typical)

10 (V CE =4V)

120mA
A

90mA 60mA

A 20m mA 18
Collector Current I C (A)

Collector Current I C (A)

2mA

Collector Current I C (A)

4mA

p) Tem

ase

(C

1A

5C

C (C

0.2

0.5

10

50

100 200

1.0 Base-Emittor Voltage V B E (V)

30C

25

12

(Case

as

eT

3A

Temp

em

5A

p)

I B =1 mA

I C =7A

2.0

2.4

Collector-Emitter Voltage V C E (V)

Base Current I B (mA)

h FE I C Characteristics (Typical)
(V C E =2V) 10000 5000 DC Cur rent Gain h F E

h FE I C Temperature Characteristics (Typical)

(V C E =2V) 10000 5000 DC Cur rent Gain h F E

j- a ( C/W)

j-a t Characteristics
5

Typ

12
1000 500

1000 500

25

Transient Thermal Resistance

1 0.5

100 50

100 50

10 0.02

0.1

0.5

10

20 0.02

0.1

0.5

1.0

10

0.1

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

f T I E Characteristics (Typical)
(V C E =12V) 40 20 10 5 Cu t-off Fre quen cy f T (M H Z ) 30 Collector Curre nt I C (A)

Safe Operating Area (Single Pulse)

40

P c T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30

1 0.5

M aximum Po wer Dissipation P C (W)

Typ
10 0m

1ms

10 ms

W ith In

20

20

fin ite he at

150x150x2 10 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75

si nk

0.1 0.05

10

Without Heatsink Natural Cooling

0 0.01

0.05

01

0.5

0.01 1

10

50

100

500

100

125

150

Emitter Current I E (A)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

148