2SC4140

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)

Unit

VCB=500V

100max

VCEO

400

IEBO

VEB=10V

100max

10

V(BR)CEO

IC=25mA

400min

18(Pulse36)

hFE

VCE=4V, IC=10A

10 to 30

VCE(sat)

IC=10A, IB=2A

0.5max

PC

130(Tc=25C)

VBE(sat)

IC=10A, IB=2A

1.3max

Tj

150

fT

VCE=12V, IE=2.0A

10typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

165typ

pF

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

200

20

10

10

1max

3max

0.5max

12

0.5

55C

10

10 18

1
0.5

t on

tf
0.1
0.2

0.5

10

10

18

0.1

10

mp)
e Te

(Cas

1000

P c T a Derating
130

50

100

Collector-Emitter Voltage V C E (V)

500

nk

10

si

0.03
5

at

500

he

0.1
0.05

ite

0.1

Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%

fin

1
0.5

100

In

Collecto r Cur rent I C (A)

0.05

Collector-Emitter Voltage V C E (V)

100

ith

Without Heatsink
Natural Cooling

100

mp)

mp
Te

0.5

1
0.5

50

1.2

Time t(ms)

10

10

1.0

DC

10

0.8

Maxim um Power Dissi pation P C (W)

1m

ms

0.6

50
10

Co lle ctor Cu rre nt I C ( A)

0.4

j-a t Characteristics

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

50

0.2

Collector Current I C (A)

Collector Current I C (A)

0.03
5

t s tg

V C C 200V
I C :I B1 :I B 2 =10:1:2

Transient Thermal Resistance

t o n t s tg t f ( s)
Switching Ti me

DC Cur rent Gain h FE

25C

Base-Emittor Voltage V B E (V)

10

0.5

10 18

t on t stg t f I C Characteristics (Typical)

125C

0.1

se

(V C E =4V)
50

e Te

55

Collector Current I C (A)

h FE I C Characteristics (Typical)

0.05

(Ca

V C E (sat)

Collector-Emitter Voltage V C E (V)

5
0.02

(Cas

Temp

(Case

0
0.02 0.05 0.1

Collector Current I C (A)

125C

j - a (C /W)

e Temp)

25C (Cas

12

55C

I B =100mA

Temp)

55C (Case

eT
em
p)
25
C

200mA
4

V B E (sat)
1

as

400m A

16

(C

600mA

(V CE =4V)

18

125

Collector-Emitter Saturation Voltage V C E (s at) (V )

Base-Emitter Saturation Voltage V B E (s at) (V)

Collector Current I C (A)

12

1.4

I C V BE Temperature Characteristics (Typical)

(I C /I B =5)

1.4

800 mA

Weight : Approx 6.0g

a. Part No.
b. Lot No.

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)

1.2 A

0.65 +0.2
-0.1

5.450.1
B

IC
(A)

16

2
3

5.450.1

RL
()

1 .6 A

3.20.1

1.05 +0.2
-0.1

VCC
(V)

18

2.00.1

Typical Switching Characteristics (Common Emitter)

I C V CE Characteristics (Typical)

4.80.2

IB

Tstg

15.60.4
9.6

25C

IC

4.0

VEBO

Symbol

1.8

Ratings

ICBO

5.00.2

Conditions

2.0

Unit

500

19.90.3

Ratings

VCBO

Symbol

External Dimensions MT-100(TO3P)

(Ta=25C)

4.0max

Electrical Characteristics

20.0min

Absolute maximum ratings (Ta=25C)

Application : Switching Regulator and General Purpose

50

3.5
0

Without Heatsink
0

25

50

75

100

125

150

Ambient Temperature Ta(C)

93