2SC3679

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) IAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C

Application : Switching Regulator and General Purpose

(Ta=25C)

IElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.5A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ

External Dimensions MT-100(TO3P)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1

2SC3679

Unit

A A
V V MHz pF
20.0min 19.90.3

4.0

a b

3.20.1

4.0max

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

ITypical Switching Characteristics (Common Emitter)

VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 1 ton (s) 1max tstg (s) 5max tf (s) 1max

5.450.1 B C E

5.450.1

Weight : Approx 6.0g a. Type No. b. Lot No.

I C V CE Characteristics (Typical)
5

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)

(I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V )

I C V BE Temperature Characteristics (Typical)

5 (V C E =4V)

700mA

600mA
500mA

Collector Current I C (A)

300mA

Collector Current I C (A)

400 mA

3
mp)

Temp (Case 25C

200mA

e Te

I B =100mA

Te m p) 25 C 5 5 C

V C E (sat) 0 0.03 0.05 0.1 0.5

Ca 125C (

se

10

0.2

0.4

0.6

0.8

55C (C

55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas

125C

(Cas

V B E (sat)

ase Tem

p)

1.0

1.2

Collector-Emitter Voltage V C E (V)

Collector Current I C (A)

Base-Emittor Voltage V B E (V)

(V C E =4V) 50 10

j - a ( C/ W)

h FE I C Characteristics (Typical)
t on t s t g t f ( s)

t on t stg t f I C Characteristics (Typical)

j-a t Characteristics
2

DC Cur rent Gain h F E

Transient Thermal Resistance

125C
25C

t s tg V C C 250V I C :I B 1 :I B2 =2:0.3:1Const.

55C

Switching T im e

0.5

1 0.5 t on 0.2 0.1 0.5

tf

10

5 0.02

0.05

0.1

0.5

0.1

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

Safe Operating Area (Single Pulse)

20 10 5 Collector Curren t I C ( A)
10
10
1m

Reverse Bias Safe Operating Area

20 100

P c T a Derating

5 Collector Curren t I C (A)

0m

M aximum Power Dissipa ti on P C (W)

10

10
10

ith

DC ( Tc

In fin

1 0.5

1 0.5

ite

=2 5 C)

he

50

at si nk

0.1 0.05

Without Heatsink Natural Cooling

0.1 0.05

Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than1%

0.01 5

10

50

100

500

1000

0.01 50

100

500

1000

3.5 0

Without Heatsink 0 25 50 75 100 125 150

Collector-Emitter Voltage V C E (V)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

68

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.