LAPT

2SC2837
Application : Audio and General Purpose
(Ta=25C) Ratings 100max 100max 150min 50min 2.0max 70typ 60typ V pF
20.0min 4.0max

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 10 2 100(Tc=25C) 150 55 to +150 Unit V V V A A W C C

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=3V IC=5A, IB=0.5A VCE=12V, IE=1A VCB=80V, f=1MHz

External Dimensions MT-100(TO3P)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1

Unit

A A
19.90.3

4.0

a b

3.20.1

MHz

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

sTypical Switching Characteristics (Common Emitter)

VCC (V) 60 RL () 12 IC (A) 5 VB2 (V) 5 IB1 (mA) 500 IB2 (mA) 500 ton (s) 0.2typ tstg (s) 1.4typ tf (s) 0.35typ

5.450.1 B C E

5.450.1

Weight : Approx 6.0g a. Part No. b. Lot No.

I C V CE Characteristics (Typical)
m 400
8 Collector Current I C (A)

V CE ( sat ) I B Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s at) (V ) 3

I C V BE Temperature Characteristics (Typical)

10 (V CE =4V)

10

300m

A
A

200m

8 Collector Current I C (A)

A 160m
6
12 0m A

80mA

as

eT

12

0.5

1.0 Base Current I B (A)

1.5

2.0

30

25

1 Base-Emittor Voltage V B E (V)

5A

5C

(Ca

I B =20mA

(C

se

Tem

I C =10A

em

40mA

p)

p)

Collector-Emitter Voltage V C E (V)

(V C E =4V) 200 DC Curr ent Gain h FE D C Cur r ent Gai n h F E

(V C E =4V) 200 125C

j - a ( C/W)

h FE I C Characteristics (Typical)

h FE I C Temperature Characteristics (Typical)

j-a t Characteristics
3

100

Typ

100

25C 30C

Transient Thermal Resistance 0.5 1 5 10

50

50

0.5

20 0.02

0.1

1 Collector Current I C (A)

10

20 0.02

0.05

0.1

0.2

10

100 Time t(ms)

1000 2000

Collector Current I C (A)

f T I E Characteristics (Typical)
120 (V C E =12V) 30

Safe Operating Area (Single Pulse)

100
10

P c T a Derating

100 Cu t-off Fr eque ncy f T ( MH Z ) 10

M aximum Power Dissipa ti on P C (W)

m s

Typ
80

Collector Curre nt I C ( A)

ith

In

fin ite he

60

50

at si nk

40

1 Without Heatsink Natural Cooling

20

0.5

0 0.02

0.2 0.1 1 6 2 10 100 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)

3.5 0

Without Heatsink 0 25 50 75 100 125 150

Ambient Temperature Ta(C)

60