Equivalent circuit

2SD2641

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)

Unit

ICBO

VCB=110V

100max

VCEO

110

IEBO

VEB=5V

100max

VEBO

IC

V(BR)CEO

IC=30mA

110min

hFE

VCE=4V, IC=5A

5000min

IB

VCE(sat)

IC=5A, IB=5mA

2.5max

PC

60(Tc=25C)

VBE(sat)

IC=5A, IB=5mA

3.0max

Tj

150

fT

VCE=12V, IE=2A

60typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

55typ

pF

Tstg

15.60.4
9.6

1.8

Ratings

4.80.2

5.00.2

110

External Dimensions MT-100(TO3P)

(Ta=25C)

Conditions

Symbol

2.0

VCBO

Electrical Characteristics

4.0

Unit

19.90.3

Ratings

Symbol

2.00.1

3.20.1

4.0max

Absolute maximum ratings (Ta=25C)

(7 0 )

Application : Audio, Series Regulator and General Purpose

20.0min

Darlington

3
1.05 +0.2
-0.1

0.65 +0.2
-0.1

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

5.450.1

Typical Switching Characteristics (Common Emitter)

VCC
(V)

RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
(mA)

IB2
(mA)

ton
(s)

tstg
(s)

tf
(s)

30

10

0.8typ

6.2typ

1.1typ

1.4

Weight : Approx 6.0g

a. Part No.
b. Lot No.

V CE ( sat ) I B Characteristics (Typical)

I C V BE Temperature Characteristics (Typical)

I B =0.1mA

I C =3A

0.1

0.5

Collector-Emitter Voltage V C E (V)

10

50

h FE I C Temperature Characteristics (Typical)

(V C E =4V)

Typ

1000
500

0.5

125C

Transient Thermal Resistance

DC C urrent G ain h FE

50000

5000

10000
25C

5000

30C

1000
500

100
0.01

56

0.1

Collector Current I C (A)

p)
em
eT
as
(C

)
Temp

0.5

2.5

j-a t Characteristics
5

0.5
1

56

10

50 100

500 1000 2000

Time t(ms)

Collector Current I C (A)

f T I E Characteristics (Typical)

Safe Operating Area (Single Pulse)

P c T a Derating

(V C E =12V)
80

60

20

Typ

Collector Curre nt I C (A)

nk

160

si

Emitter Current I E (A)

at

0.1

he

0
0.02

ite

0.1

fin

Without Heatsink
Natural Cooling

40

In

0.5

ith

0m

20

10

40

60

Maximu m Power Dissipa tion P C (W)

10
10

Cut-o ff F requ ency f T (MH Z )

DC Curr ent Gain h F E

50000

0.1

Base-Emittor Voltage V B E (V)

(V C E =4V)

100
0.01

100

Base Current I B (mA)

h FE I C Characteristics (Typical)

10000

(Case

30C

I C =5A

0.2mA

Temp

5C

Collector Current I C (A)

0.3 mA

(V CE =4V)

12

0. 4m A

(Case

25C

5m

Collector Current I C (A)

0.

j - a (C /W)

5mA

Collector-Emitter Saturation Voltage V C E (s a t) (V )

1m

I C V CE Characteristics (Typical)

5.450.1
B

20

Without Heatsink

0.05
3

10

50

100

Collector-Emitter Voltage V C E (V)

200

3.5
0

25

50

75

100

125

Ambient Temperature Ta(C)

150