2SA1295

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)

Ratings

Unit

ICBO

VCB=230V

100max

36.40.3
24.40.2

VEB=5V

100max

IC=25mA

230min

VCEO

230

IEBO

VEBO

V(BR)CEO

IC

17

hFE

VCE=4V, IC=5A

50min

IB

VCE(sat)

IC=5A, IB=0.5A

2.0max

PC

200(Tc=25C)

fT

VCE=12V, IE=2A

35typ

MHz

Tj

150

COB

VCB=10V, f=1MHz

500typ

pF

55 to +150

hFE Rank O(50 to 100), Y(70 to 140)

2-3.20.1

21.40.3
20.0min

Tstg

a
b
2
3

5.450.1

RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
(mA)

IB2
(mA)

ton
(s)

tstg
(s)

tf
(s)

60

12

10

500

500

0.35typ

1.50typ

0.30typ

0mA

200

mA

1 00 mA
5

50mA

I B =20mA
0

15

1
I C =10A

5A
0

0.5

Collector-Emitter Voltage V C E (V)

1.0

1.5

h FE I C Temperature Characteristics (Typical)

(V C E =4V)
200

200

0.5

25C

100

50

30C

10
0.02

10 17

Transient Thermal Resistance

DC Cur rent Gain h FE

Typ

50

0.8

0.1

0.5

1.6

f T I E Characteristics (Typical)

2.4

3.2

10 17

j-a t Characteristics
2

0.5

0.1

10

Collector Current I C (A)

Collector Current I C (A)

100

1000 2000

Time t(ms)

Safe Operating Area (Single Pulse)

P c T a Derating

(V C E =12V)
60

200

40

Emitter Current I E (A)

16

10

0.05
3

10

100

Collector-Emitter Voltage V C E (V)

300

nk

0.1

si

0
0.02

at

Without Heatsink
Natural Cooling
0.1

he

0.5

120

ite

20

fin

160

In

Ty

ith

40

Collect or Cur ren t I C (A)

10

M aximum Power Dissipa ti on P C (W)

10

Cu t-of f Fr eque ncy f T ( MH Z )

DC Cur rent Gain h F E

125C

0.1

Base-Emittor Voltage V B E (V)

(V C E =4V)

10
0.02

2.0

Base Current I B (A)

h FE I C Characteristics (Typical)

100

10

p)

30
10

mA

Weight : Approx 18.4g

a. Part No.
b. Lot No.

17

em

Collector Current I C (A)

0
50

(V C E =4V)

eT

A
1.0

125
C (
Cas
25C

Collector Current I C (A)

.5
1

I C V BE Temperature Characteristics (Typical)

j- a ( C/W)

15

0A

Collector-Emitter Saturation Voltage V C E (s a t) (V )

A
3

.0

.
2

V CE ( sat ) I B Characteristics (Typical)

3.0 +0.3
-0.1

5.450.1
B

VCC
(V)

17

0.65 +0.2
-0.1

1.05 +0.2
-0.1

Typical Switching Characteristics (Common Emitter)

I C V CE Characteristics (Typical)

6.00.2
2.1

mp)

Conditions

e Te

230

External Dimensions MT-200

(Ta=25C)

Symbol

Cas

Unit

VCBO

Electrical Characteristics

(Ta=25C)

Ratings

C (

Symbol

30

Absolute maximum ratings

Application : Audio and General

4.0max

LAPT

80

40

5
0

Without Heatsink
0

25

50

75

100

125

Ambient Temperature Ta(C)

150