Professional Documents
Culture Documents
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
Depletion Mode
MOSFET
VDSX
ID(on)
RDS(on)
N-Channel
=
>
1000V
800mA
21
TO-252 (IXTY)
G
S
D (Tab)
Symbol
Test Conditions
VDSX
TJ = 25C to 150C
VGSX
Maximum Ratings
1000
Continuous
20
VGSM
Transient
30
PD
TC = 25C
60
- 55 ... +150
150
- 55 ... +150
C
C
C
300
260
C
C
1.13 / 10
Nm/lb.in.
0.35
2.50
3.00
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TO-252
TO-263
TO-220
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSX
1000
VGS(off)
- 2.0
IGSX
IDSX(off)
RDS(on)
ID(on)
- 4.0
Advantages
Easy to Mount
Space Savings
High Power Density
50 nA
1 A
15 A
TJ = 125C
21
800
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL 94 V-0
Flammability Classification
mA
Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
DS100182A(12/09)
IXTY08N100D2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
330
Ciss
Crss
td(on)
mS
325
pF
24
pF
6.5
pF
28
ns
57
ns
34
ns
48
ns
14.6
nC
1.2
nC
8.3
0.50
tr
td(off)
RG = 10 (External)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
TO-220
560
Coss
Millimeter
Min. Max.
Inches
Min.
Max.
nC
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
2.08 C/W
C/W
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
Characteristic Values
Min.
Typ.
Max.
Test Conditions
SOA
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
36
Characteristic Values
Min.
Typ.
Max.
VSD
trr
IRM
QRM
0.8
1. Gate
2. Drain
3. Source
Dim.
Safe-Operating-Area Specification
Symbol
IXTA08N100D2
IXTP08N100D2
1.3
1.03
7.40
3.80
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
s
A
C
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 1. Output Characteristics @ T J = 25C
0.8
VGS = 5V
2V
1V
0.7
1.8
0.6
1.6
0V
0.5
ID - Amperes
ID - Amperes
VGS = 5V
2V
1V
2.0
0.4
-1V
0.3
1.4
1.2
0V
1.0
0.8
-1V
0.6
0.2
0.4
-2V
0.1
-2V
0.2
0.0
0.0
0
10
12
14
10
20
30
60
70
80
1E-01
VGS = 5V
1V
VGS = - 3.00V
1E-02
- 3.25V
0V
0.6
0.5
-1V
ID - Amperes
ID - Amperes
50
0.8
0.7
40
VDS - Volts
VDS - Volts
0.4
0.3
0.2
1E-03
- 3.50V
1E-04
- 3.75V
1E-05
- 4.00V
1E-06
- 4.25V
1E-07
- 4.50V
-2V
0.1
-3V
0.0
1E-08
10
15
20
25
30
100
200
300
400
VDS - Volts
500
600
700
800
900
VDS - Volts
1.E-01
VGS = -3.25V
1.E-02
-3.50V
-3.75V
-4.00V
1.E-04
R O - Ohms
ID - Amperes
1.E+09
1.E-03
1.E+08
TJ = 25C
1.E+07
-4.25V
1.E-05
-4.50V
1.E-06
TJ = 100C
1.E+06
1.E+05
100
200
300
400
500
600
700
800
VDS - Volts
900
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
VGS - Volts
-3.4
-3.2
-3.0
-2.8
IXTY08N100D2
2.6
VGS = 0V
2.2
VGS = 0V
2.4
5V - - - -
I D = 0.4A
2.2
R DS(on) - Normalized
R DS(on) - Normalized
IXTA08N100D2
IXTP08N100D2
1.8
1.4
1.0
2.0
TJ = 125C
1.8
1.6
1.4
1.2
1.0
0.6
0.8
0.2
TJ = 25C
0.6
-50
-25
25
50
75
100
125
150
0.0
0.2
0.4
0.6
TJ - Degrees Centigrade
0.8
1.0
1.2
1.4
1.6
ID - Amperes
1.2
VDS = 30V
VDS = 30V
1.2
1.0
TJ = - 40C
0.8
25C
g f s - Siemens
ID - Amperes
1.0
0.8
TJ = 125C
25C
- 40C
0.6
0.4
0.4
0.2
0.2
0.0
-4.0
125C
0.6
0.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
0.0
0.2
0.4
VGS - Volts
0.8
1.0
1.2
1.4
1.3
VGS = -10V
2.4
1.2
2.0
IS - Amperes
BV / VGS(off) - Normalized
0.6
ID - Amperes
1.1
BVDSX @ VGS = - 5V
1.0
1.6
1.2
TJ = 125C
TJ = 25C
0.8
0.9
0.4
0.0
0.8
-50
-25
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.4
0.5
0.6
VSD - Volts
0.7
0.8
0.9
IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 13. Capacitance
1,000
Capacitance - PicoFarads
Ciss
VDS = 500V
I G = 1mA
I D = 400mA
VGS - Volts
100
Coss
10
1
0
-1
-2
-3
Crss
-4
f = 1 MHz
-5
1
0
10
15
20
25
30
35
40
VDS - Volts
10
12
14
16
QG - NanoCoulombs
@ T C = 25C
@ T C = 75C
10.00
10.00
RDS(on) Limit
RDS(on) Limit
25s
100s
1ms
10ms
100ms
0.10
1.00
ID - Amperes
1.00
ID - Amperes
25s
100s
1ms
0.10
10ms
DC
TJ = 150C
100ms
TJ = 150C
TC = 25C
Single Pulse
DC
TC = 75C
Single Pulse
0.01
0.01
10
100
1,000
10
100
VDS - Volts
1,000
VDS - Volts
Z (th)JC - C / W
10.0
1.0
0.1
0.0001
0.001
0.01
0.1
10