High Voltage MOSFET

N-Channel, Depletion Mode

IXTP 01N100D
IXTU 01N100D
IXTY 01N100D

VDSS = 1000
V
ID25 = 100 mA

RDS(on) = 110

Preliminary Data Sheet

Symbol

Test Conditions

Maximum Ratings

VDSX

TJ = 25C to 150C

1000

VDGX

TJ = 25C to 150C

1000

VGS

Continuous

20

VGSM

Transient

30

IDSS

TC = 25C; TJ = 25C to 150C

100

mA

IDM

TC = 25C, pulse width limited by TJ

400

mA

PD

TC = 25C
TA = 25C

25
1.1

W
W

-55 ... +150

TJM

150

Tstg

-55 ... +150

TJ

TL

1.6 mm (0.063 in.) from case for 10 s

300

TISOL

Plastic case for 10 s (IXTU)

300

Md

Mounting torque

TO-220

1.3 / 10

Nm/lb.

TO-220
TO-251
TO-252

4
0.8
0.8

g
g
g

Weight

TO-220 (IXTP)

D (TAB)

DS

TO-251 (IXTU)

G
D

D (TAB)

TO-252 (IXTY)

G
S
D (TAB)

Pins: 1 - Gate
2 - Drain
3 - Source TAB - Drain
Symbol
Test Conditions
(TJ = 25C, unless otherwise specified)

Characteristic Values
min. typ. max.

VDSX

VGS = -10 V, ID = 25 A

1000

VGS(off)

VDS = 25V, ID = 25 A

-2.5

IGSS

VGS = 20 VDC, VDS = 0

IDSX(off)

VDS = VDSX, VGS = -10 V

RDS(on)

VGS = 0 V, ID = 50 mA

ID(on)

VGS = 0 V, VDS = 25V

2006 IXYS All rights reserved

TJ = 125C
Note 1
Note 1

90
100

Features
z
Normally ON mode
z

-5

100

nA

10
250

A
A

110

mA

Low RDS (on) HDMOSTM process

Rugged polysilicon gate cell structure
Fast switching speed

Applications
z
Level shifting
z

Triggers

Solid state relays

Current regulators

98809B (01/06)

IXTP 01N100D

Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

gfs

VDS = 50 V; ID = 100 mA

Note1

100

Ciss
Coss

VGS = -10 V, VDS = 25 V, f = 1 MHz

Crss

150

mS

120

pF

25

pF

pF

td(on)

VDS = 100 V V, ID = 50 mA

ns

tr

VGS = 0 V to -10

ns

td(off)

RG

30

ns

51

ns

= 30 (External)

tf
RthJC

RthCS

TO-220

0.25

Source-Drain Diode

K/W

Pins: 1 - Gate
3 - Source

2 - Drain
TAB - Drain

K/W

Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

VSD

VGS = -10 V, IF = 100 mA

Note1

trr

IF = 0.75 A, -di/dt = 10 A/s,

VDS = 25 V, VGS = -10V

1.0

TO-220 AD Outline

1.5

1.5

TO-251 AA Outline

Note1: Pulse test, t 300 s, duty cycle d 2 %

TO-252 AA Outline
Dim.

Pins: 1 - Gate
3 - Source

A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3

2 - Drain
TAB - Drain

Millimeter
Min. Max.

Inches
Min.
Max.

2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92

0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025 0.040
0.035 0.050
0.100 0.115

Pins: 1 - Gate
3 - Source

2 - Drain
TAB - Drain

Dim.

Millimeter
Min.
Max.

Inches
Min. Max.

A
A1

2.19
0.89

2.38
1.14

.086
0.35

.094
.045

b
b1
b2

0.64
0.76
5.21

0.89
1.14
5.46

.025
.030
.205

.035
.045
.215

c
c1

0.46
0.46

0.58
0.58

.018
.018

.023
.023

5.97

6.22

.235

.245

E
e
e1

6.35
2.28
4.57

6.73
BSC
BSC

.250
.090
.180

.265
BSC
BSC

17.02

17.78

.670

.700

L
L1
L2
L3

8.89
1.91
0.89
1.15

9.65
2.28
1.27
1.52

.350
.075
.035
.045

.380
.090
.050
.060

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:

4,835,592
4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,710,405B2
6,710,463

6,727,585
6,759,692