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2SC4138
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)

100max

IEBO

VEB=10V

100max

10

V(BR)CEO

IC=25mA

400min

10(Pulse20)

hFE

VCE=4V, IC=6A

10 to 30

IC=6A, IB=1.2A

0.5max

VCE(sat)

PC

80(Tc=25C)

VBE(sat)

IC=6A, IB=1.2A

1.3max

Tj

150

fT

VCE=12V, IE=0.7A

10typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

85typ

pF

5.450.1

RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

200

33.3

10

0.6

1.2

1max

3max

0.5max

0.1

0.5

t on t stg t f I C Characteristics (Typical)

10

25C
55C

10

0.5

10

t s tg
V C C 200V
I C :I B 1 :I B2 =10:1:2

1
0.5

t on
tf

0.1
0.1

0.5

10

0.3

50

100

Collector-Emitter Voltage V C E (V)

500

Collect or Cur ren t I C (A)

)
emp

mp)
e Te

nk

10

40

si

Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%

60

at

500

(Cas

P c T a Derating

he

100

0.1
5

1000

ite

50

Collector-Emitter Voltage V C E (V)

0.5

100

fin

0.1
10

10

In

Without Heatsink
Natural Cooling

ith

0.5

0.5

1.2

80

10

1.0

Time t(ms)

10

0.8

Ma xim um Powe r Dissipat io n P C (W)

10

0.6

30

30

Collect or Curr ent I C (A)

0.4

j-a t Characteristics

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

1m

0.2

Collector Current I C (A)

Collector Current I C (A)

90

Transient Thermal Resistance

t o n t s t g t f ( s)

125C

Switching Ti me

DC C urrent G ain h FE

100

0.1

Base-Emittor Voltage V B E (V)

(V C E =4V)

0.05

mp

10

Collector Current I C (A)

h FE I C Characteristics (Typical)

5
0.02

Te

V C E (sat)
0.05

Collector-Emitter Voltage V C E (V)

50

se

0
0.02

55C

I B =100m A

se T

200m A

V B E (sat)

(Ca

400mA

8
1

600 mA

125

Collector Current I C (A)

(V C E =4V)

10

Collector Current I C (A)

1A

1.4

I C V BE Temperature Characteristics (Typical)

(I C /I B =5)

j- a ( C/ W)

Collector-Emitter Saturation Voltage V CE(s a t) (V )

Base-Emitter Saturation Voltage V B E (s a t) (V )

1.2

Weight : Approx 2.0g

a. Type No.
b. Lot No.

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)

1.4

0.65 +0.2
-0.1

5.450.1
B

VCC
(V)

I C V CE Characteristics (Typical)

2
3
1.05 +0.2
-0.1

Typical Switching Characteristics (Common Emitter)

10

3.20.1

IB

Tstg

2.00.1

(Ca

VEBO

4.80.2

25C

400

19.90.3

VCEO

15.60.4
9.6

1.8

VCB=500V

5.00.2

ICBO

500

2.0

Unit

VCBO

External Dimensions MT-100(TO3P)

(Ta=25C)

4.0

Symbol

2SC4138

Unit

IC

Electrical Characteristics
Conditions

2SC4138

4.0max

Symbol

20.0min

Absolute maximum ratings (Ta=25C)

Application : Switching Regulator and General Purpose

20

3.5
0

Without Heatsink
0

25

50

75

100

125

Ambient Temperature Ta(C)

150