NTE133

NChannel JFET Silicon Transistor

General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
DrainGate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Lead Temperature (During Soldering, 1/16 from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter

Min

Typ

Max

Unit

25

VGS = 20V, VDS = 0

nA

VGS = 20V, VDS = 0, TA = +150C

VGS(off)

ID = 1A, VDS = 15V

6.5

GateSource Voltage

VGS

ID = 50A, VDS = 15V

0.4

6.0

ZeroGateVoltage Drain Current

IDSS

VDS = 15V, VGS = 0

0.5

15

mA

Forward Transfer Admittance

|yfs|

VDS = 15V, VGS = 0, f = 1kHz

1000

7500

mho

GateSource Breakdown Voltage

Gate Reverse Current

GateSource Cutoff Voltage

Symbol

Test Conditions

V(BR)GSS IG = 1A, VDS = 0

IGSS

.207 (5.28) Dia

.060
(1.52)
Min

.180
(4.57)

.500
(12.7)
Min

Seating
Plane

.018 (0.45)
.100 (2.54) Dia
Drain

Source

Gate

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