VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.

0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 250 amperes peak
* Ideal for pri nted ci rcui t boards
* Hi gh forward surge current capabi l i ty
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Si ngl e phase, hal f wave, 60 Hz, resi sti ve or i nducti ve l oad.
For capaci ti ve l oad, derate current by 20%.
RS801
THRU
RS807
MAXIMUM RATINGS (At TA = 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At TA = 25
o
C unless otherwise noted)
SINGLE-PHASE SILICON BRIDGE RECTIFIER
45&
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
TJ, TSTG
VRMS
Volts
Volts
Amps 8.0
250
-55 to + 150
0
C
UNITS
Maximum Average Forward Rectified Output Current at Tc = 75
o
C
50 200 400 100 600 800 1000
35 140 280 70 420 560 700
50 200 400 100 600 800 1000 Volts
Amps
RS801 RS803 RS804 RS802 RS805 RS806 RS807
Maximum DC Blocking Voltage
with heat sink
DC Blocking Voltage per element
CHARACTERISTICS
VF
SYMBOL
IR
UNITS
1.1
0.2 mAmps
uAmps
Maximum Reverse Current at Rated
Maximum Forward Voltage Drop per element at 8.0A DC Volts
@TA = 25
o
C
@TC = 100
o
C
10
RS801 RS803 RS804 RS802 RS805 RS806 RS807
.268 (6.8)
.280 (7.1)
.180 (4.6)
.220 (5.6)
.048 (1.2)
.052 (1.3)
.740 (18.8)
.780 (19.8)
.895 (22.7)
.935 (23.7)
(3.8 x 5.7L)
.15 x .23L
.600 (16.8)
.700 (17.8)
1.00
(25.4)
.300
(7.5)
.140
(3.5)
DIA.
MIN.
AC
HOLE THRU
MECHANICAL DATA
RECTRON
RATING AND CHARACTERISTIC CURVES (RS801 THRU RS807)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
I
N
S
T
A
N
T
A
N
E
O
U
S

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,

(
A
)
INSTANTANEOUS FORWARD VOLTAGE, (V)
TC = 150 (TYP)
TC = 25 (TYP)
0.4 0.6 0.8 1 1.2
0.1
0.2
0.5
1
2
5
10
20
30
pulse test
per one diode
POWER DISSIPATION
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

P
F
(
W
)
0 2 4 6 8 12 14
28
24
20
16
12
4
0
sine wave
Tj=150
8
10
non-repetitive
Tj=25
1 cycle
8.3ms 8.3ms
0
I
F
S
M
SURGE FORWARD CURRENT CAPABILITY
P
E
A
K

F
O
R
W
A
R
D

S
U
R
G
E

C
U
R
R
E
N
T
,

(
A
)
NUMBER OF CYCLE
sine wave
260
200
100
0
1 2 5 10 20 50 100
TYPICAL FORWARD CURRENT
DERATING CURVE
A
V
E
R
A
G
E

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,

(
A
)
CASE TEMPERATURE, ( )
heatsink
Tc
Tc
sine wave
R-load
on heatsink
0 25 50 75 100 125 150 175
1
0
6
2
3
4
5
7
9
8