Transistores de Potencia

A-3.24.
2 ELECTRONICA II
Amplificadores de Potencia
Compendio de Hojas de Datos:

Transistores de potencia
Para uso interno de la materia Electrnica II
Indice:
2SC4793
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
MJE170/171/172 (PNP), MJE180/181/182 (NPN)
TIP31 A/B/C (NPN), TIP32 A/B/C (PNP)
2N5190/191/192
2SD1135
BD675/A, 677/A, 679/A, 681
2SC3074
TIP120/21/22 (NPN), TIP125/26/27 (PNP)
BD243B/C, 244B/C
MJE2955T (PNP), MJE3055T (NPN)
2N3442
2N3715/16
2N5875/76 (PNP), 2N5877/78 (NPN)
2SC5199
2N5879/80 (PNP), 2N5881/82 (NPN)
2N3055A, MJ15015 (NPN), MJ15016 (PNP)
MJL3281A (NPN), MJL1302A (PNP)
Facultad de Ciencias Exactas, Ingeniera y Agrimensura - UNR
Ingeniera Electrnica
2SC4793
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications
Driver Stage Amplifier Applications
High transition frequency: fT = 100 MHz (typ.)
Complementary to 2SA1837
Unit: mm
Maximum Ratings (Tc = 25C)

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
Collector-emitter voltage
VCEO
230
Emitter-base voltage
VEBO
Collector current
IC
Base current
IB
0.1
Ta = 25C
Collector power
dissipation
Tc = 25C
Junction temperature
Storage temperature range
2.0
PC
20
Tj
150
Tstg
55 to 150
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Electrical Characteristics (Tc = 25C)

Characteristics
JEDEC
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
1.0
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
V (BR) CEO
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
230
hFE
VCE = 5 V, IC = 100 mA
100
320
VCE (sat)
IC = 500 mA, IB = 50 mA
1.5
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
1.0
Transition frequency
fT
VCE = 10 V, IC = 100 mA
100
MHz
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Cob
Marking
C4793
Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2004-07-26
TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications. Compact TO220 AB package.
http://onsemi.com
Features
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80, 100 VOLTS,
80 WATTS
PbFree Packages are Available*
MARKING
DIAGRAM
4
TO220AB
CASE 221A
STYLE 1
2
TIPxxxG
AYWW
TIPxxx
A
Y
WW
G
= Device Code:
29, 29A, 29B, 29C
30, 30A, 30B, 30C
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 8
Publication Order Number:

TIP29B/D
MAXIMUM RATINGS
Symbol
TIP29
TIP30
TIP29A
TIP30A
TIP29B
TIP30B
TIP29C
TIP30C
Unit
VCEO
40
60
80
100
Vdc
Collector Base Voltage
VCB
40
60
80
100
Vdc
Emitter Base Voltage
Rating
Collector Emitter Voltage
VEB
5.0
Vdc
Collector Current Continuous

Peak
IC
1.0
3.0
Adc
Base Current
IB
0.4
Adc
Total Power Dissipation

@ TC = 25_C
Derate above 25_C
PD
30
0.24
W
W/_C

@ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
Unclamped Inductive Load Energy (Note 1)
32
mJ
TJ, Tstg
65 to + 150
_C
Symbol
Max
Unit
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
_C/W
Thermal Resistance, JunctiontoCase
RqJC
4.167
_C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz
Device
Package
Shipping
TO220
50 Units / Rail
TIP29G
TO220
(PbFree)
50 Units / Rail
TIP29A
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TIP29
TIP29AG
TIP29B
TIP29BG
TIP29C
TIP29CG
TIP30
TO220
50 Units / Rail
TIP30G
TO220
(PbFree)
50 Units / Rail
TIP30A
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TIP30AG
TIP30B
TIP30BG
TIP30C
TIP30CG
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic
Symbol
Min
Max
CollectorEmitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)

TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
VCEO(sus)
Unit
40
60
80
100
0.3
0.3
200
200
200
200
IEBO
1.0
mAdc
hFE
40
15
75
CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
0.7
Vdc
BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.3
Vdc
CurrentGain Bandwidth Product (Note 3)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
SmallSignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
OFF CHARACTERISTICS
Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Vdc
ICEO
TIP29, TIP29A, TIP30, TIP30A

TIP29B, TIP29C, TIP30B, TIP30C

(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
mAdc
mAdc
ICES
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%

3. fT = hfe ftest
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3
MJE170, MJE171, MJE172

(PNP), MJE180, MJE181,
MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
http://onsemi.com
The MJE170/180 series is designed for low power audio amplifier

and low current, high speed switching applications.
3 AMPERES
POWER TRANSISTORS
40 60 80 VOLTS
12.5 WATTS
Features
CollectorEmitter Sustaining Voltage
VCEO(sus) = 40 Vdc MJE170, MJE180

= 60 Vdc MJE171, MJE181
= 80 Vdc MJE172, MJE182
DC Current Gain
hFE = 30 (Min) @ IC = 0.5 Adc
= 12 (Min) @ IC = 1.5 Adc
CurrentGain Bandwidth Product
fT = 50 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakages
ICBO = 100 nA (Max) @ Rated VCB
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Machine Model, C
Human Body Model, 3B
TO225AA
CASE 7709
STYLE 1
3 2
1
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
CollectorBase Voltage
Value
Unit
VCB
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
CollectorEmitter Voltage
Vdc
VCEO
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
EmitterBase Voltage
Vdc
40
60
80
VEB
7.0
Vdc
IC
3.0
6.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C

Derate above 25_C
PD
1.5
0.012
W
W/_C
Total Power Dissipation @ TA = 25_C

Derate above 25_C
PD
12.5
0.1
W
W/_C
TJ, Tstg
65 to +150
_C
Collector Current
Continuous
Peak
Operating and Storage Junction

Temperature Range
YWW
JE1xxG
60
80
100
Y
WW
JE1xx
G
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= PbFree Package
Preferred devices are recommended choices for future use

and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
January, 2006 Rev. 9

MJE171/D
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

Characteristic
Symbol

Max
Unit
qJC
10
_C/W
qJA
83.4
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
VCEO(sus)
40
60
80
0.1
0.1
0.1
0.1
0.1
0.1
50
30
12
250
0.3
0.9
1.7
1.5
2.0
Unit
OFF CHARACTERISTICS

(IC = 10 mAdc, IB = 0)
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TC = 150C)
(VCB = 80 Vdc, IE = 0, TC = 150C)
(VCB = 100 Vdc, IE = 0, TC = 150C)
MJE170,
MJE171,
MJE172,
MJE170,
MJE171,
MJE172,
Vdc
mAdc
ICBO
MJE180
MJE181
MJE182
MJE180
MJE181
MJE182
Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1.5 Adc, VCE = 1.0 Vdc)
hFE
CollectorEmitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.5 Adc, IB = 150 mAdc)
(IC = 3.0 Adc, IB = 600 mAdc)
VCE(sat)
BaseEmitter Saturation Voltage

(IC = 1.5 Adc, IB = 150 mAdc)
(IC = 3.0 Adc, IB = 600 mAdc)
VBE(sat)
BaseEmitter On Voltage
VBE(on)
1.2
Vdc
fT
50
MHz
60
40
Vdc
Vdc
CurrentGain Bandwidth Product (Note 1)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
MJE171/MJE172
MJE181/MJE182
1. fT = hfe ftest.
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2
pF
TIP31, TIP31A, TIP31B, TIP31C,

(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Plastic Power Transistors
http://onsemi.com
Designed for use in general purpose amplifier and switching

applications.
3 AMPERE
POWER TRANSISTORS
406080100 VOLTS,
40 WATTS
Features
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

VCEO(sus) = 40 Vdc (Min) TIP31, TIP32
= 60 Vdc (Min) TIP31A, TIP32A
= 80 Vdc (Min) TIP31B, TIP32B
= 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
MARKING
DIAGRAM
4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage TIP31, TIP32

TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO
40
60
80
100
Vdc
40
60
80
100
Vdc
VEB
5.0
Vdc
IC
3.0
5.0
Adc
Base Current
IB
1.0
Adc

@ TC = 25_C
Derate above 25_C
PD
40
0.32
W
W/_C

@ TA = 25_C
Derate above 25_C
PD
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
EmitterBase Voltage
Collector Current
Continuous
Peak

Temperature Range
VCB
2.0
0.016
W
W/_C
32
mJ
TJ, Tstg
65 to
+ 150
_C
TO220AB
CASE 221A
STYLE 1
2
TIP3xxG
AYWW
TIP3xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
PbFree Package
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W

TIP31A/D
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
Characteristic
Symbol
Max
Unit
RqJA
62.5
_C/W
RqJC
3.125
_C/W

Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
40
60
80
100
Vdc
ICEO
0.3
mAdc
0.3
200
200
200
200
IEBO
1.0
mAdc
hFE
25
10
50
VCE(sat)
1.2
Vdc
VBE(on)
1.8
Vdc
CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
TIP31, TIP32, TIP31A, TIP32A
TIP31B, TIP31C, TIP32B, TIP32C

(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
mAdc
ICES
TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Device
TIP31
Package
Shipping
TO220
50 Units / Rail
TIP31G
TO220
(PbFree)
50 Units / Rail
TIP31A
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TIP31AG
TIP31B
TIP31BG
TIP31C
TIP31CG
TIP32
TO220
50 Units / Rail
TIP32G
TO220
(PbFree)
50 Units / Rail
TIP32A
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TIP32AG
TIP32B
TIP32BG
TIP32C
TIP32CG
http://onsemi.com
2
2N5190, 2N5191, 2N5192

Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, excellent safe area limits. Complement to PNP
2N5194, 2N5195.
http://onsemi.com
Features
ESD Ratings: Machine Model, C; > 400 V
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS 40 WATTS
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V0 @ 0.125 in.

MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2N5190
2N5191
2N5192
VCEO
40
60
80
Vdc
2N5190
2N5191
2N5192
VCBO
40
60
80
Vdc
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
40
320
W
mW/C
TJ, Tstg
65 to +150
Characteristic
Symbol
Max
Unit
RqJC
3.12
C/W
EmitterBase Voltage

Temperature Range
TO225AA
CASE 77
STYLE 1
3 2
1
MARKING DIAGRAM
YWW
2
N519xG
Y
= Year
WW
= Work Week
2N519x = Device Code
x = 0, 1, or 2
G
= PbFree Package
Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Package
Shipping
2N5190
TO225AA
500 Units/Box
2N5190G
TO225AA
(PbFree)
500 Units/Box
2N5191
TO225AA
500 Units/Box
2N5191G
TO225AA
(PbFree)
500 Units/Box
2N5192
TO225AA
500 Units/Box
2N5192G
TO225AA
(PbFree)
500 Units/Box
Device
March, 2006 Rev. 12
For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2N5191/D
2N5190, 2N5191, 2N5192

ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
40
60
80
Vdc
1.0
1.0
1.0
mAdc
0.1
0.1
0.1
2.0
2.0
2.0
mAdc
0.1
0.1
0.1
mAdc
1.0
mAdc
25
20
10
7.0
100
80
0.6
1.4
Vdc
OFF CHARACTERISTICS
VCEO(sus)

(IC = 0.1 Adc, IB = 0)
2N5190
2N5191
2N5192

(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N5190
2N5191
2N5192
ICEO

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190
2N5191
2N5192
2N5190
2N5191
2N5192

(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5190
2N5191
2N5192
ICEX
ICBO

(VBE = 5.0 Vdc, IC = 0)
IEBO
hFE
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5190/2N5191
2N5192
2N5190/2N5191
2N5192
(IC = 4.0 Adc, VCE = 2.0 Vdc)

(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
1.2
Vdc
fT
2.0
MHz
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
2SD1135
Silicon NPN Triple Diffused
ADE-208-906 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25C)

Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
Collector to emitter voltage
VCEO
80
Emitter to base voltage
VEBO
Collector current
IC
Collector peak current
I C(peak)
40
Collector power dissipation
PC *
Tj
150
Storage temperature
Tstg
45 to +150
Note:
1. Value at TC = 25C.
2SD1135
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO

voltage
80
I C = 50 mA, RBE =
Emitter to base breakdown

voltage
V(BR)EBO
I E = 10 A, IC = 0
Collector cutoff current
I CBO
0.1
mA
VCB = 80 V, IE = 0
60
200
VCE = 5 V, IC = 1 A*2
hFE2
35
VCE = 5 V, IC = 0.1 A*2
Base to emitter voltage
VBE
1.5
VCE = 5 V, IC = 1 A*2
Collector to emitter saturation

voltage
VCE(sat)
I C = 2 A, IB = 0.2 A*2
Gain bandwidth product
fT
10
MHz
VCE = 5 V, IC = 0.5 A*2
Cob
40
pF
VCB = 20 V, IE = 0, f = 1 MHz
DC current transfer ratio
hFE1*
Notes: 1. The 2SD1135 is grouped by h FE1 as follows.

2. Pulse test.
B
60 to 120
100 to 200
Maximum Collector Dissipation Curve
Area of Safe Operation

5
Collector current IC (A)
Collector power dissipation Pc (W)
60
40
20
(10 V, 4 A)
IC max (Continuous)
D
(33 V, 1.2 A)
2
(T C O
C
p
= er
25 at
1.0
C ion
)
0.5
0.2
0.1
(80 V, 0.06 A)
0.05
50
100
Case temperature TC (C)
150
2
5
10
20
50 100
Collector to emitter voltage VCE (V)

Order this document

by BD675/D
SEMICONDUCTOR TECHNICAL DATA
! "#

!
. . . for use as output devices in complementary generalpurpose amplifier applications.
High DC Current Gain
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,
678, 678A, 680, 680A, 682
BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS
Symbol
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681
Unit
VCEO
45
60
80
100
Vdc
VCB
45
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation

@TC = 25_C
Derate above 25_C
PD
40
0.32
Watts
W/_C
55 to + 150
_C
Rating

Temperating Range
TJ, Tstg
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
JC
3.13
_C/W

*Motorola Preferred Device
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS
40 WATTS
CASE 7708
TO225AA TYPE
50
PD, POWER DISSIPATION (WATTS)
45
40
35
30
25
20
15
10
5.0
0
15
30
45
60
75
90
105
120
135
150
165
TC, CASE TEMPERATURE (C)
Figure 1. Power Temperature Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

v
v
Characteristic
Symbol
Min
Max
Unit
BVCEO
45
60
80
100
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
500
Adc

(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100C)
ICBO
0.2
2.0
IEBO
2.0
750
750
2.5
2.8
2.5
2.5
1.0
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)

(IC = 50 mAdc, IB = 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD681
ON CHARACTERISTICS
DC Currert Gain(1)
(IC = 1.5 Adc,VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
mAdc
hFE
BD675, 677, 679, 681

BD675A, 677A, 679A
CollectorEmitter Saturation Voltage(1)

(IC = 1.5 Adc, IB = 30 mAdc)
(IC = 2.0 Adc, IB = 40 mAdc)
BD677, 679, 681

BD675A, 677A, 679A
BaseEmitter On Voltage(1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD677, 679, 681

BD675A, 677A, 679A
VCE(sat)
mAdc
VBE(on)
Vdc
Vdc
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
(1) Pulse Test: Pulse Width
300 s, Duty Cycle
hfe
2.0%.
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
There are two limitations on the power handling ability of a

transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations imposed by secondary breakdown.
1.0
0.5
BONDING WIRE LIMIT

THERMALLY LIMIT at TC = 25C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
0.05
1.0
TC = 25C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
2.0
5.0
10
50
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
100
Figure 2. DC Safe Operating Area

NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
COLLECTOR
BASE
[ 8.0 k [ 120
EMITTER
Figure 3. Darlington Circuit Schematic
2SC3074
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
High Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
High speed switching time: tstg = 1.0 s (typ)
Maximum Ratings (Ta = 25C)

Characteristics
Symbol
Rating
Unit
VCBO
60
VCEO
50
VEBO
Collector current
IC
Base current
IB
Collector power
dissipation
Ta = 25C
Tc = 25C
PC
1.0
20
Tj
150
Tstg
55 to 150
JEDEC
JEITA
TOSHIBA
2-7B1A
JEDEC
JEITA
TOSHIBA
2-7J1A
2002-07-23
2SC3074
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO
IC = 10 mA, IB = 0
50
hFE (1)
VCE = 1 V, IC = 1 A
(Note)
70
240
hFE (2)
VCE = 1 V, IC = 3 A
30
VCE (sat)
IC = 3 A, IB = 0.15 A
0.2
0.4
Base-emitter saturation voltage
VBE (sat)
IC = 3 A, IB = 0.15 A
0.9
1.2
fT
VCE = 4 V, IC = 1 A
120
MHz
VCB = 10 V, IE = 0, f = 1 MHz
80
pF
0.1
1.0
0.1
DC current gain
Cob
Turn-on time
ton
20 s
IB1
Switching time
Storage time
tstg
Fall time
Note: hFE (1) classification
tf
IB1
INPUT
IB2
IB2
IB1 = IB2 = 0.15 A,

DUTY CYCLE 1%
OUTPUT
10
VCC = 30 V
O: 70 to 140, Y: 120 to 240
Marking
C3074
Product No.
Lot No.
hFE Classification
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture
2002-07-23
TIP120, TIP121, TIP122

(NPN); TIP125, TIP126,
TIP127 (PNP)
Preferred Devices
Plastic MediumPower
Transistors
http://onsemi.com
Designed for generalpurpose amplifier and lowspeed switching

applications.
Features
High DC Current Gain

hFE
= 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
DARLINGTON
5 AMPERE
POWER TRANSISTORS
6080100 VOLTS, 65 WATTS
MARKING
DIAGRAM
4
TO220AB
CASE 221A
STYLE 1
2
TIP12xG
AYWW
TIP12x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= PbFree Package


TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
MAXIMUM RATINGS
Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
Unit
VCEO
60
80
100
Vdc
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc

Peak
IC
5.0
8.0
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25_C

Derate above 25_C
PD
65
0.52
W
W/_C
Total Power Dissipation @ TA = 25_C

Derate above 25_C
PD
2.0
0.016
W
W/_C
50
mJ
TJ, Tstg
65 to + 150
_C
Rating
Operating and Storage Junction, Temperature Range
Characteristic
Symbol
Max
Unit
RqJC
1.92
_C/W
RqJA
62.5
_C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
Device
Package
Shipping
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TO220
50 Units / Rail
TO220
(PbFree)
50 Units / Rail
TIP120
TIP120G
TIP121
TIP121G
TIP122
TIP122G
TIP125
TIP125G
TIP126
TIP126G
TIP127
TIP127G
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2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Characteristic
Symbol
Min
Max
60
80
100
0.5
0.5
0.5
0.2
0.2
0.2
2.0
1000
1000
2.0
4.0
Unit
OFF CHARACTERISTICS

(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ICEO

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
mAdc
ICBO

(VBE = 5.0 Vdc, IC = 0)
mAdc
IEBO
mAdc
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE

(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
Vdc
(IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
2.5
Vdc
hfe
4.0
300
200
SmallSignal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz
Cob
pF

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
20
40
60
80
100
T, TEMPERATURE (C)
120
Figure 1. Power Derating
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3
140
160
ON Semiconductor
NPN
Complementary Silicon Plastic

Power Transistors
BD243B
BD243C *
. . . designed for use in general purpose amplifier and switching

applications.
PNP
BD244B
Collector Emitter Saturation Voltage
BD244C *
Collector Emitter Sustaining Voltage
VCEO(sus) = 80 Vdc (Min) BD243B, BD244B

= 100 Vdc (Min) BD243C, BD244C
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
*ON Semiconductor Preferred Device
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80100 VOLTS
65 WATTS
MAXIMUM RATINGS
Symbol
BD243B
BD244B
BD243C
BD244C
Unit
VCEO
80
100
Vdc
VCB
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc

Peak
IC
6
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation

@ TC = 25C
Derate above 25C
PD
Rating

Temperature Range
STYLE 1:
PIN 1.
2.
3.
4.
Watts
TJ, Tstg
65
0.52
W/C
65 to +150
C
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A06
TO220AB
Characteristic
Symbol
Max
Unit
RJC
1.92
C/W
80
60
40
20
20
40
60
80
100
120
140
160

April, 2002 Rev. 10

BD243B/D
BD243B BD243C BD244B BD244C

Characteristic
Symbol
CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc,
mAdc IB = 0)
Min
Max
80
100
0.7
400
400
1.0
30
15
Unit
VCEO(sus)
BD243B,
BD243B BD244B
BD243C, BD244C

(VCE = 60 Vdc, IB = 0)
ICEO
Vdc
mAdc
BD243B, BD243C, BD244B, BD244C

(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
Adc
ICES
BD243B, BD244B
BD243C, BD244C

(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE

(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
1.5
Vdc
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.0
Vdc
CurrentGain Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
(1) Pulse Test: Pulsewidth 300 s, Duty Cycle 2.0%.

(2) fT = hfe ftest
2.0
VCC
30 V
25 s
0.7
0.5
RC
+ 11 V
t, TIME (s)
SCOPE
RB
0
9.0 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
51
TJ = 25C
VCC = 30 V
IC/IB = 10
1.0
D1
0.3
0.2
tr
0.1
0.07
0.05
4V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
0.03
0.02
0.06
Figure 2. Switching Time Test Circuit
td @ VBE(off) = 5.0 V
0.1
1.0
0.2
0.4 0.6
2.0
Figure 3. TurnOn Time
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2
4.0
6.0
ON Semiconductor
PNP
MJE2955T *
NPN
MJE3055T *
Complementary Silicon Plastic

Power Transistors
. . . designed for use in generalpurpose amplifier and switching
applications.
DC Current Gain Specified to 10 Amperes

fT = 2.0 MHz (Min) @ IC
= 500 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
60
Vdc
VCB
70
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
PD
75
Watts
0.6
W/C
55 to +150
C
Total Power Dissipation @ TC = 25C

Derate above 25C
MJE3055T, MJE2955T
Temperature Range
TJ, Tstg
Characteristic
Symbol
Max
Unit
JC
1.67
C/W
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A09
TO220AB
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
7.0
5.0
5.0 ms
1.0ms
There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T J(pk) = 150C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown. (See
AN415A)
100s
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25C (D = 0.1)
20
30
7.0
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
50 60
Figure 1. ActiveRegion Safe Operating Area
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
April, 2002 Rev. 4

MJE2955T/D
MJE2955T MJE3055T

Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
ICEO
60
Vdc
700
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)


(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
ICEX

(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150C)
ICBO
IEBO
Adc
mAdc
1.0
5.0
1.0
10
5.0
20
5.0
100
1.1
8.0
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (1)

(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
CollectorEmitter Saturation Voltage (1)

(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
BaseEmitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
fT
2.0
MHz
CurrentGainBandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 20%.
http://onsemi.com
2
ON Semiconductor
2N3442
High-Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
Collector Emitter Sustaining Voltage
VCEO(sus) = 140 Vdc (Min)

Excellent Second Breakdown Capability
CASE 107
TO204AA
(TO3)
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
140
Vdc
VCB
160
Vdc
EmitterBase Voltage
VEB
7.0
Vdc

Collector Current Peak
IC
10
15**
Adc
Base Current Continuous

Peak
IB
7.0
Adc

Derate above 25C
PD
117
0.67
Watts
W/C
TJ, Tstg
65 to +200
C
Symbol
Max
Unit
RJC
1.5
C/W

Temperature Range
Characteristic
* Indicates JEDEC Registered Data.

** This data guaranteed in addition to JEDEC registered data.
March, 2001 Rev. 10

2N3442/D
2N3442

Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
Vdc

(VCE = 140 Vdc, IB = 0)
ICEO
200
mAdc

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
ICEX
5.0
30

(VBE = 7.0 Vdc, IC = 0)
IEBO
5.0
20
7.5
70
OFF CHARACTERISTICS

(IC = 200 mAdc, IB = 0)
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE

(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
5.0
Vdc
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
5.7
Vdc
CurrentGain Bandwidth Product (2)

(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
fT
80
kHz

(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
12
72
PD /PD(MAX), POWER DISSIPATION (NORMALIZED)
*Indicates JEDEC Registered Data.

NOTES:
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
2. fT = |hfe| ftest
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
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2
175
200

Order this document

by 2N3715/D
SEMICONDUCTOR TECHNICAL DATA

. . . designed for mediumspeed switching and amplifier applications. These devices
feature:
Total Switching Time at 3 A typically 1.15 s

Gain Ranges Specified at 1 A and 3 A
Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A
Excellent Safe Operating Areas
Complement to 2N379192
10 AMPERE
POWER TRANSISTORS
SILICON NPN
60 80 VOLTS
150 WATTS
CASE 107
TO204AA
(TO3)
MAXIMUM RATINGS
Rating
Symbol
2N3715
2N3716
Unit
VCEO
60
80
Volts
VCB
80
100
Volts
EmitterBase Voltage
VEB
7.0
7.0
Volts
Collector Current
IC
10
10
Amps
Base Current
IB
4.0
4.0
Amps
Power Dissipation
PD
150
150
Watts
Thermal Resistance
JC
1.17
1.17
_C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
65 to + 200
_C
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
200
Figure 1. PowerTemperature Derating Curve

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.
REV 7
312
Motorola, Inc. 1995

v
v

Characteristic
EmitterBase Cutoff Current

(VEB = 7.0 Vdc)
Symbol
Min
Max
Unit
IEBO
5.0
mAdc
1.0
1.0
10
10
60
80
50
30
150
VCE(sat)*
0.8
Vdc
VBE(sat)*
1.5
Vdc
VBE*
1.5
Vdc
hfe
4.0
All Types
CollectorEmitter Cutoff Current

(VCE = 80 Vdc, VBE = 1.5 Vdc)
(VCE = 100 Vdc, VBE = 1.5 Vdc)
(VCE = 60 Vdc, VBE = 1.5 Vdc, TC = 150_C)
(VCE = 80 Vdc, VBE = 1.5 Vdc, TC = 150_C)
ICEX
mAdc
2N3715
2N3716
2N3715
2N3716
CollectorEmitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)
VCEO(sus)*
Vdc
2N3715
2N3716
DC Current Gain (1)

(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
2N3715, 2N3716
2N3715, 2N3716
hFE*
CollectorEmitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc)
2N3715, 2N3716
BaseEmitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc)
2N3715, 2N3716
BaseEmitter Voltage (1)

(IC = 3.0 Adc, VCE = 2.0 Vdc)
All Types
Small Signal Current Gain

(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz)
All Types
Switching Times (Figure 2)
(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)

Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width
Typ
300 s, Duty Cycle
tr
ts
tf
0.45
0.3
0.4
2.0%.
TEST CIRCUIT
1.5
+11.5 V
WAVE SHAPE
AT POINT A
ts
1.0
SWITCHING TIMES ( s)
IC = 5 A, IB1 = IB2 = 0.5 A

f 150 cps DUTY CYCLE 2%
ton ~ 30 s
9 V
0.7
0.5
tf
0.3
tr
toff
~ 1.7 ms
100
1W
0.2
+ 30 V
~ 4.8 ms
20
1W
0.2
900
900
Hg RELAYS
IB1 = IB2
0.1
0.1
6
4W
100
0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
3.0
5.0
+ 62 V
9 V
100 4 V
Figure 2. Typical Switching Times
313
2SC5199
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199
Power Amplifier Applications
Unit: mm
High breakdown voltage: VCEO = 160 V (min)
Suitable for use in 80-W high fidelity audio amplifiers output stage.
Maximum Ratings (Tc = 25C)

Characteristics
Symbol
Rating
Unit
VCBO
160
VCEO
160
VEBO
Collector current
IC
12
Base current
IB
1.2
PC
120
Tj
150
JEDEC
Tstg
55 to 150
JEITA
Collector power dissipation

(Tc = 25C)
TOSHIBA
Electrical Characteristics (Tc = 25C)

Characteristics
Symbol
ICBO
2-21F1A
Test Condition
VCB = 160 V, IE = 0
Min
Typ.
Max
Unit
5.0
IEBO
VEB = 5 V, IC = 0
5.0
V (BR) CEO
IC = 50 mA, IB = 0
160
VCE = 5 V, IC = 1 A
55
160
hFE (2)
VCE = 5 V, IC = 6 A
35
74
VCE (sat)
IC = 8 A, IB = 0.8 A
0.35
2.5
Base-emitter voltage
VBE
VCE = 5 V, IC = 6 A
1.0
1.5
fT
VCE = 5 V, IC = 1 A
30
MHz
VCB = 10 V, IE = 0, f = 1 MHz
170
pF
hFE (1)
DC current gain
(Note)
Note: hFE (1) classification
Cob
R: 55 to 110, O: 80 to 160
2004-07-07
ON Semiconductor
NPN
2N3055A
High-Power Transistors
MJ15015 *
PNP
MJ15016 *
. . . PowerBase complementary transistors designed for high

power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dctodc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
CurrentGain BandwidthProduct @ IC = 1.0 Adc
fT = 0.8 MHz (Min) NPN

= 2.2 MHz (Min) PNP
Safe Operating Area Rated to 60 V and 120 V, Respectively
*MAXIMUM RATINGS
Symbol
2N3055A
MJ15015
MJ15016
Unit
VCEO
60
120
Vdc
VCBO
100
200
Vdc
CollectorEmitter Voltage Base

Reversed Biased
VCEV
100
200
Vdc
EmitterBase Voltage
VEBO
7.0
Vdc
IC
15
Adc
Base Current
IB
7.0
Adc
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
Rating

Temperature Range
TJ, Tstg
115
0.65
180
1.03
65 to +200
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS
CASE 107
TO204AA
(TO3)
Watts
W/C
C
Characteristic
Symbol
Max
Max
Unit
RJC
1.52
0.98
C/W
*Indicates JEDEC Registered Data. (2N3055A)
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
May, 2001 Rev. 4

2N3055A/D
2N3055A MJ15015 MJ15016

Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
60
120
Vdc
0.7
0.1
5.0
1.0
30
6.0
5.0
0.2
1.95
3.0
10
20
5.0
70
70
1.1
3.0
5.0
OFF CHARACTERISTICS (1)
*CollectorEmitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)
2N3055A
MJ15015, MJ15016

(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
2N3055A
MJ15015, MJ15016
*Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
2N3055A
MJ15015, MJ15016

(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150C)
2N3055A
MJ15015, MJ15016

(VEB = 7.0 Vdc, IC = 0)
2N3055A
MJ15015, MJ15016
IEBO
Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s nonrepetitive)
2N3055A
MJ15015, MJ15016
(VCE = 60 Vdc)
IS/b
ICEO
ICEV
mAdc
ICEV
mAdc
mAdc
mAdc
*SECOND BREAKDOWN
Adc
*ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
VCE(sat)
Vdc
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
0.7
1.8
Vdc
fT
0.8
2.2
6.0
18
MHz
Cob
60
600
pF
td
0.5
tr
4.0
ts
3.0
tf
6.0
*DYNAMIC CHARACTERISTICS

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055A, MJ15015
MJ15016
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
*SWITCHING CHARACTERISTICS (2N3055A only)

RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4
0 4 Adc,
Adc
Duty
y Cycle
y
2%
tp = 25 s
Fall Time
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.

*Indicates JEDEC Registered Data. (2N3055A)
http://onsemi.com
3
MJL3281A (NPN)
MJL1302A (PNP)
Preferred Devices
Complementary Bipolar
Power Transistors
Features
http://onsemi.com
Exceptional Safe Operating Area

NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
PbFree Packages are Available
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
260 VOLTS
200 WATTS
Benefits
Reliable Performance at Higher Powers

Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwith
MARKING DIAGRAM
Applications
HighEnd Consumer Audio Products

Home
Amplifiers
Home Receivers
Professional Audio Amplifiers
Theater and Stadium Sound Systems
Public Address Systems (PAs)
MJLxxxxA
AYYWWG
2
TO264
CASE 340G
STYLE 2
xxxx
A
YY
WW
G
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating
Symbol
Value
Unit
VCEO
260
Vdc
VCBO
260
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
VCEX
260
Vdc

Peak (Note 1)
IC
15
25
Adc
Base Current Continuous
IB
1.5
Adc

Derate Above 25C
PD
200
1.43
Watts
W/C
TJ, Tstg
65 to
+150

Temperature Range
3
1
EMITTER
BASE
2 COLLECTOR
= 3281 or 1302
= Location Code
= Year
= Work Week
= PbFree Package
Device
MJL3281A
MJL3281AG
MJL1302A
MJL1302AG
Package
Shipping
TO264
25 Units/Rail
TO264
(PbFree)
25 Units/Rail
TO264
25 Units/Rail
TO264
(PbFree)
25 Units/Rail
Characteristic
Symbol
Max
Unit
RJC
0.625
C/W

Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
October, 2005 Rev. 9

MJL3281A/D
MJL3281A (NPN) MJL1302A (PNP)

Symbol
Characteristic
Min
Max
260
50
4
1
75
75
75
75
45
150
150
150
150
30
600
Unit
OFF CHARACTERISTICS
VCEO(sus)

(IC = 100 mAdc, IB = 0)
(VCB = 260 Vdc, IE = 0)
ICBO

(VEB = 5 Vdc, IC = 0)
IEBO
Vdc
Adc
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 100 Vdc, t = 1 s (nonrepetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
hFE

(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
Vdc
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
MHz
Cob
http://onsemi.com
2
pF

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A-3.24.

Compendio de Hojas de Datos:

Facultad de Ciencias Exactas, Ingeniera y Agrimensura - UNR

High transition frequency: fT = 100 MHz (typ.)

Maximum Ratings (Tc = 25C)

Weight: 1.7 g (typ.)

Electrical Characteristics (Tc = 25C)

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

Collector output capacitance

Part No. (or abbreviation code)

PbFree Packages are Available*

Semiconductor Components Industries, LLC, 2005

September, 2005 Rev. 8

Publication Order Number:

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

Collector Base Voltage

Emitter Base Voltage

Collector Emitter Voltage

Collector Current Continuous

Total Power Dissipation

Total Power Dissipation

Unclamped Inductive Load Energy (Note 1)

Operating and Storage Junction Temperature Range

Thermal Resistance, JunctiontoAmbient

Thermal Resistance, JunctiontoCase

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

CollectorEmitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)

CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

CurrentGain Bandwidth Product (Note 3)

Collector Cutoff Current

TIP29, TIP29A, TIP30, TIP30A

Collector Cutoff Current

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%

MJE170, MJE171, MJE172

The MJE170/180 series is designed for low power audio amplifier

CollectorEmitter Sustaining Voltage

VCEO(sus) = 40 Vdc MJE170, MJE180

Total Power Dissipation @ TC = 25_C

Total Power Dissipation @ TA = 25_C

Operating and Storage Junction

Preferred devices are recommended choices for future use

January, 2006 Rev. 9

Publication Order Number:

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

Thermal Resistance, JunctiontoCase

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

CollectorEmitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

CollectorEmitter Saturation Voltage

BaseEmitter Saturation Voltage

CurrentGain Bandwidth Product (Note 1)

TIP31, TIP31A, TIP31B, TIP31C,

Designed for use in general purpose amplifier and switching

CollectorEmitter Saturation Voltage

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

Collector Emitter Voltage TIP31, TIP32

Total Power Dissipation

! "#