Unit 1

CMOS Technology

Outline

Introduction
MOS Capacitor
nMOS I-V Characteristics
pMOS I-V Characteristics
C- V characteristics (Gate and Diffusion Capacitance)

Unit 1: CMOS Technology

Tagore Institute of Engineering & Technology

Introduction
So far, we have treated transistors as ideal switches
An ON transistor passes a finite amount of current
Depends on terminal voltages
Derive current-voltage (I-V) relationships
Transistor gate, source, drain all have capacitance
I = C (DV/Dt) -> Dt = (C/I) DV
Capacitance and current determine speed

Unit 1: CMOS Technology

Tagore Institute of Engineering & Technology

MOS Capacitor
Gate and body form MOS
capacitor
V <0
Operating modes
+
Accumulation
Depletion
(a)
Inversion
0<V <V
g

polysilicon gate
silicon dioxide insulator
p-type body

+
-

depletion region

(b)

Vg > Vt
+
-

inversion region
depletion region

(c)

Unit 1: CMOS Technology

Tagore Institute of Engineering & Technology