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ST2001HI: High Voltage Fast-Switching NPN Power Transistor
ST2001HI: High Voltage Fast-Switching NPN Power Transistor
APPLICATIONS:
3
2
1
ISOWATT218
Parameter
V CBO
V CEO
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (IB = 0)
V EBO
Value
Uni t
1500
600
V
V
Collector Current
10
I CM
IB
20
7
A
A
P t ot
V i so l
Total Dissipation at Tc = 25 C
Insulation W ithstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
St orage Temperature
55
2500
W
V
IC
T stg
Tj
April 2002
-65 to 150
150
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ST2001HI
THERMAL DATA
R t hj-ca se
Max
2.3
C/W
Parameter
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
V EB = 7 V
V CEO(sus ) Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ .
T C = 125 C
I C = 100 mA
L = 25 mH
Max.
Un it
1
2
mA
mA
mA
600
V CE(sat )
Collector-Emitter
Saturation Voltage
IC = 5 A
IB = 1.25 A
1.5
V BE(s at)
Base-Emitt er
Saturation Voltage
IC = 5 A
IB = 1.25 A
1.2
DC Current Gain
IC = 5 A
IC = 6 A
V CE = 1 V
V CE = 5 V
IC = 5 A
L BB( off) = 2 H
f h = 64 KHz
h F E
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
2/6
Thermal Impedance
4.5
5
10
2.6
0.2
3
0.4
s
s
ST2001HI
Derating Curve
Output Characteristics
DC Current Gain
DC Current Gain
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ST2001HI
Power Losses
RBSOA
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ST2001HI
MIN.
5.35
3.30
2.90
1.88
0.75
0.75
1.50
1.90
mm
TYP.
10.80
15.80
MAX.
5.65
3.80
3.10
2.08
0.95
0.95
1.70
2.10
1.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.030
0.059
0.075
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
3.7
0.138
0.425
0.622
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
MAX.
0.222
0.150
0.122
0.082
0.037
0.037
0.067
0.083
0.043
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
0.146
P025C/B
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ST2001HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
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