Analysis and comparison of transistor amplifier circuits (CE and CB) using h-parameters.

APPARATUS: hardware:
Transistor(CK-100)
Dual regulated power supply (0-10V) ,
2 Voltmeters (0-1V) ;
Ammeter (0-100) mA ;
Ammeter (0-100) uA ;
Resistors (4.7K, 1K) ;
Each one Connecting wires as per required .
Software: multisim , transistor(BC-107),resistor( ), pot( ), 2 voltmeters, 2 ammeters, connecting wires.
Theory:
The terminal behaviour of a large class of two port devices is specified by two voltages and
two currents as shown in figure 3.1 below. Two of the four quantities are selected as
independent variables and the remaining two are selected as dependant variables. The h
parameter or the hybrid parameters of a transistor helps us to analyse the amplifying action of
transistor for small signal. It is necessary for practical purposes.
In general there are four type of h-parameter for CE & CB configuration respectively. These
are :
CE configuration :
h11 = hie (input impedance) and

h21 = hf e(forward current transfer ratio) with output

shorted.

h12 = hre (reverse voltage ratio) and

h22 = hoe (output admittance) with input open.

CB configuration :
h11 = hib (input impedance) and
shorted.

h21 = hf b(forward current transfer ratio) with output

h12 = hrb (reverse voltage ratio) and

h22 = hob (output admittance) with input open.

The h-parameter model is typically suited to transistor circuit modelling. It is important

because:
1. Its values are used on specification sheets
2. It is one model that may be used to analyze circuit behaviour
3. It may be used to form the basis of a more accurate transistor model
4. The h parameter model has values that are complex numbers that vary as a function
Frequency , Ambient temperature ,Q-Point .

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