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Linh kin bn dn
Ni dung
Linh kin th ng
Cht bn dn
Diode
Transistor lng cc BJT
Transistor hiu ng trng FET
in tr (Resistor)
in tr l linh kin in t c bn, n cn tr s lu thng
ca dng in.
Tc dng ca in tr trong mch in l xc nh mc dng
v p.
n v ca in tr l Ohm k hiu l .
Bi s ca thng l Kilo, Mega v Giga
1K = 103 1M = 106 1G = 109 in tr quang
Nhit tr
4
in tr
quang
in tr (Resistor)
Cc nh sn xut khng sn xut in tr vi mi gi tr m
theo cc gi tr chun c EIA khuyn ngh, gi l tiu chun
E vi cc h chnh l:
E6 sai s 20% 100, 150, 220, 330, 470, 680
E12 sai s 10% 100, 120, 150, 180, 220, 270, 330, 390,
470, 560, 680, 820
E24 sai s 5% 100, 110, 120, 130, 150, 160, 180, 200,
220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560,
620, 680, 750, 820, 910
E48 sai s 2%
E96 sai s 1%
E128 sai s 0,25%; 0,5%; 0,1% v nh hn na
c gi tr mong mun ngi ta mc in tr theo kiu ni
5
tip, song song hoc kt hp
in tr (Resistor)
in tr c gi tr khng i hoc c th thay i (bin tr)
Bin tr
in tr c gi tr khng
i
Bin tr vi chnh (trimer): l loi c lm ch yu t
carbon, kch thc nh v phi s dng tuoclovit xoay. T
l iu chnh ca loi bin tr ny thng l logarit
6
Cch c thng s in tr
c trc tip khi thn in tr ln (in tr dy qun)
ghi gi tr in tr, cng sut v dung sai.
v d: 22 , 25W, sai s 1%
c gin tip theo quy c ch s v ch ci (in tr dn
b mt) v m mu (in tr carbon hoc in tr film)
tiu chun BS 1852 ca Anh
Quy c 1: ch s cui cng (3 hoc 4) ch h s nhn
ch ci ch n v R (hoc E hoc khng ghi) =
K= 103
M = 106
v tr ch ci ch v tr du thp phn
Cch c thng s in tr
c gin tip theo quy c ch s v ch ci (in tr dn
b mt) v m mu (in tr carbon hoc in tr film)
tiu chun BS 1852 ca Anh
Quy c 2: ch s cui cng ch h s nhn
ch ci ch dung sai :F = 1%; G = 2%; J = 5%; K =
10%
V d:
K hiu
Thng s
220F
22 1%
682J
6,8 K 5%
1K5
1,5 K
153K
15 K
10%
8
Quy c m mu
Mu
Vng
1,2
S thc
Vng 3
H s
nhn
Vng 4
Dung
sai
Vng 5
H s
nhit
en
100
Nu
101
1%
100ppm
102
2%
50ppm
Cam
103 1K
3%
15ppm
Vng
104
4%
25ppm
Lc
105
Lam
106 - 1M
Tm
107
Xm
Trng
Vch mu ca in tr
thuc E12
+ Nu ch c 3 vng mu
th sai s mc nh l 20%
9
+ Nu 6 vng mu th 3
vng u ch s thc
ng dng ca in tr
ng vai tr l phn t hn dng, trnh cho cc
linh kin b ph hng do cng dng qu ln
c s dng ch to cc dng c sinh hot
(bn l, bp in hay bng n,) hoc cc thit b
cng nghip (thit b sy, si,)
Xc nh hng s thi gian: Trong mt s mch to
xung
Phi hp tr khng
c s dng trong cc mch phn p phn cc
cho cc linh kin in t
T in
T in l linh kin th ng dng np v
phng in tch (c kh nng tch v phng nng
lng). N chn dng mt chiu nhng li cho
dng xoay chiu i qua.
K hiu v hnh dng thc t
11
T in
Cu to ca t in gm 2 tm dn in c cch in vi
Bn cc
Cht in
mi
in tch
0
1
H s
nhn
D
x1
x10
Dung
sai khi
>10pF
20%
1%
x100
2%
x1000
3%
Mu
S
A
S
B
en
Nu
0
1
Cam
Dung
H s in p
sai khi
nhit lm vic
<10pF
TC
V
2.0pF
-6
0.1pF -33x10
-75x10-6
250v
0.25pF
150x10
6
Vng
Lc
x10k
x100k
+100%,
-0%
5%
220x10-
400v
0.5pF 330x10-
100v
Lam
x1m
470x10-
630v
14
Tm
750x10-
ng dng ca t in
T ghp tng: Cch ly thnh phn 1 chiu gia
cc tng khuch i, m bo iu kin hot ng
c lp gia cc tng trong ch 1 chiu
T thot: Loi b tn hiu khng hu ch xung t
T lc: c s dng trong cc mch lc
T cng hng: Dng trong cc mch cng hng
LC (mch cng hng ni tip hoc song song)
Cun cm
Cun cm (hay cun dy) l linh kin in t c th
lu tr nng lng t trng khi cho dng in qua.
Kh nng ny ca cun cm c o bng t cm
(L) ca n, n v l Henry (H).
16
ng dng ca cun cm
Cun cng hng: Cun
cm cng t in to
thnh mch cng hng
ni tip hoc song song
Cun chn cao tn (RF
choke)
Mch lc LC
Rle in t
My pht in
Mch
lc LC
17
RF Choke
Dng in
Cun cm
Cun cm
18
in p
1.2. Cht bn
dn
Cu trc nguyn t
Cc phn t c cu to nn bi cc
nguyn t
M hnh Bohr:
Nguyn t c cu trc hnh tinh
Nguyn t gm ht nhn v cc
electron chuyn ng xung quanh
ht nhn theo qu o hnh trn
hoc hnh bu dc
Mi qu o c 1 mc nng lng
xc nh
Cc electron cng gn ht nhn th
c mc nng lng cng nh
Cc electron xa ht nhn nht, c
mc nng lng cao nht c gi l
cc electron ha tr, d dng bt ra
khi lc ht ca ht nhn tr
thnh elcotron t do
ha tr: Tt c cc mc nng
Vng
lng u b in t chim ch
(vng y)
Vng dn: Cc mc nng lng u
cn trng hoc c th b chim ch 1
phn (vng trng)
Vng cm: Khng tn ti mc nng
lng no in t c th chim
ch
Nng lng vng cm:
Trong : - Nng lng vng cm
- Nng lng vng dn
- Nng lng vng ha tr
Vng
dn
Vng
cm
Vng ha tr
lm
3 loi:
Cht cch in:
Cht bn dn:
Cht dn in:
Cht cch in
C in tr sut ln:
Mt s vt liu cch in c s dng trong k
thut in t: Mica, gm, s, polime, giy cch
in,
Glass = 1012 m mica = 9 x 1013 m
quartz = 5 x
1016 m
Cht dn in
in tr sut nh: 10-8 10-5 m
C nhiu in t t do sn sng tham gia vo qu trnh to
dng
Dng in l dng chuyn di c hng ca cc ht mang
in
to c dng in trong cht rn cn thc hin 2 qu
trnh:
To ht dn
To chuyn ng c hng ca c ht mang in di tc
dng ca in trng
Cht dn in
Vt liu dn in tt nht nhit phng l bc, vng,
nhm, ng, thic Trong , nhm v ng thng c
lm dy dn, chn linh kin, connector, bng mch in .
Cht bn dn
C in tr sut ln hn in
tr sut ca cht dn in
nhng li nh hn ca cht
cch in
C th iu khin gi tr ca
in tr ca bn dn nn c
kh nng thay i c gi tr
ca dng v p trn cc linh
kin bn dn
Mt s cht bn dn thng
dng: Si, Ge, GaAs, GaP, AlAs,
AlP. Trong , Si v Ge c
gi l cht bn dn thun. Cn
cc cht bn dn cn li c
gi l cht bn dn pha tp.
Cht bn dn thun
Si v Ge l 2 cht bn dn in
hnh nht, c 4 in t lp
ngoi cng (Nhm 4 trong bng
tun hon) v l cc cht c cu
trc tinh th.
Lin kt cng ha tr ca Si
Cht bn dn thun
Khi c t nng hoc chiu
Cht bn dn pha tp
Cht bn dn pha tp loi N: Pha tp cht nhm V vo cht bn dn
thun. Cht pha tp c gi l tp cht cho (Donor), nng ca
electron t do= nng ca tp cht:
Cht bn dn pha tp loi P: Pha tp cht nhm III vo cht bn dn
thun. Cht pha tp c gi l tp cht nhn (Acceptor), nng ca
l trng t do= nng ca tp cht:
Cht bn dn pha tp
loi P
31
Khng phn cc
in trng tip xc
Min ngho -
8/2010
Phn cc thun
Cc dng ni vi cc P cn cc m ni vi
cc N (UAK >0)
Cc dng ca ngun in p ngoi s y l
trng dch chuyn t P
Cc m ca ngun in p ngoi y in t
dch chuyn t N
Dng chuyn di c hng ca cc ht mang
in (l trng v in t) to nn dng in,
c gi l dng thun, t l vi hm s m
ca in p ngoi
33
Phn cc thun
Chuyn tip dn
Chuyn tip cch in
in
34
35
Phn phn
cc ngc
Khng
cc
Diode
Cu to v k hiu
Nguyn tc lm vic ca diode
c tuyn Vn-Ampe ca diode
Phn loi v ng dng
37
Cu to v k hiu
Cc ni vi bn dn P gi l cc Anode cn cc ni vi
bn dn N gi l cc Kathode
K hiu
38
UAK > UD
UAK < UD
39
40
c tuyn Vn-Ampe ca
diode
Phn thun ca c tuyn (UAK > 0)
UD : in p ngng ca diode.
UD 0,3V (Ge) UD 0,7V (Si)
41
Diode
Diode
Diode
Diode
Diode
chnh lu
n p (Zener)
bin dung (Varicap)
pht quang (LED), thu quang (Photo diode)
xuyn hm (tunnel), cao tn, xung
42
Mch chnh lu
Mch chnh lu na chu k
44
Mch hn bin
Mch hn bin trn
Mch hn bin di
45
Mch dch mc
Lm thay i mc dc (mt chiu) ca tn hiu
46
Diode n p (Zener)
Diode Zene c cu to
tng i c bit ch
n c nng pha tp
cht rt cao, c v bng
thy tinh trong sut v
kch thc kh nh.
Diode Zene lm vic trn on c tuyn ngc, li
dng ch nh thng v in ca chuyn tip PN n nh in p. Ngha l khi b phn cc
ngc v lm vic trong vng nh thng th n
khng b hng nh cc diode khc.
in p nh thng ca diode Zene thng kh nh
(vi chc Vn tr xung) .
47
0
20
40
60
80
100
120
140
in p st trn
diode gn nh khng
i
Dng in
ngc(mA)
49
50
Cv
S
d tx
LED
Power
supply
VS
Photodiode
Cu to, k hiu
Kh nng khuch i
Nguyn tc hot ng
Cc s phn cc v nh im lm vic
CCc s mc c bn
B
!NPN
E
!PNP
B
E
54
Cu to Transistor NPN
N
C
P
Cu to Transistor PNP
P
C
N
C
B E
Base
Emitter
Chiu mi tn ch chiu dng in
qua chuyn tip Emit
57
C
B E
Base
Emitter
58
Tm tt v cu to ca
Transistor
Transistor c to thnh bi 2 chuyn tip P - N
ghp lin tip
Transistor c 3 cc: cc Colect (gp), cc Baz
(gc) v cc Emit (pht).
Chuyn tip gia Colect v Baz gi l chuyn
tip Colect, k hiu l JC
Chuyn tip gia Emi v Baz gi l chuyn
tip Emit, k hiu l JE
Hu ht cc ht dn pht x t min Emit, qua
min gc Baz v b thu gp ti min Colect
Dng IB c gi tr nh nhng gi vai tr iu
khin
59
Kh nng khuch i ca
Transistor
Vo
K =
Khuch i
Ra
Vo
61
Ra
IC
Dng in trn 3 cc
Hu ht cc ht dn pht
Tip gip JE phnx
cc thun
Emit
vt qua
V JC t
phn
cc ngc
c min Baz do min
Colecto ht
Ch : IB nh hn nhiu
IE v IC.
62
IB
IE
63
ac
c gi tr t vi chc ti vi trm, gi tr
in hnh t 50 150
Mi quan h gia v
65
66
67
68
I C f (U CE ) I
CE const
69
B const
Vcc,
R1
R3
C2
Ur
C1
C3
+
T1
R2
R4
Uv
70
H c tuyn ra
I C f (U CB ) I
CB const
71
E const
72
Nguyn tc chung
ng ti tnh v im cng tc tnh
Phn cc bng dng IB c nh
Phn cc bng hi tip m in p
Phn cc bng phn p
73
Nguyn tc chung
Phn cc (hay phn p, nh thin) : Cp in p mt chiu
ph hp cho cc cc ca BJT n c th lm vic 1 trong
3 ch (khuch i, thng bo ho, ngt)
Ch khuch i: t in p mt chiu ln cc chn cc
sao cho chuyn tip TE phn cc thun v chuyn tip TC
phn cc ngc
Transistor loi NPN: UE < UB < UC
Transistor loi PNP: UE > UB >UC
Khi tnh ton ch mt chiu trong vng tch cc ta dng cc
cng thc sau:
UBE = 0.7V
IC = IB
IE= IB + IC = ( +1)IB
74
ng ti tnh v im cng tc
tnh
ng ti tnh c v trn
c tuyn ra tnh ca
transitor nghin cu
dng in v in p mt
chiu khi mc trong mt
mch c th no .
im cng tc tnh (hay
im tnh, im phn cc)
l im nm trn ng ti
tnh xc nh dng in v
in p trn transitor khi
khng c tn hiu t vo,
ngha l xc nh iu kin
phn cc cho transitor.
75
iC (mA)
Vcc/Rt
im cng
tc tnh Q
ng ti tnh
Vcc
UCE (V)
n nh im cng tc tnh
V tr ca im lm vic tnh rt quan trng trong hot ng ca
BJT
Nguyn nhn dn n s thay i v tr ca im Q:
Nhit thay i
s ho gi ca linh kin theo thi gian hot ng
s khng n nh ca ngun cung cp ...
77
S phn cc c nh (1)
Mch phn cc c nh
78
S phn cc c nh (2)
(xc nh im cng tc tnh Q)
VCC
IB
nn phng
RBphp ny c gi
.
I
.
CQ
BQ
RB
Vy ta c:
Khi ny im cng tc tnh Q xc nh bng 3 gi tr (IBQ, ICQ, UCEQ)
79
S phn cc c nh (3)
ng ti tnh v im cng tc tnh
Minh ho trn c tuyn ra
tnh
v ng ti tnh ta cn
xc nh hai im:
Mt im trn trc tung tng
ng vi in UCE =0 v IC =
VCC/RC
Mt im trn trc honh tng
ng vi IC = 0 v UCE = VCC
im cng tc tnh ca
mch l giao ca ng ti
tnh v c tuyn ra
IB = VCC/ RB
80
S phn cc c nh (4)
n nh nhit
Khi nhit thay i, h s thay i lm cho IC thay i (v
IC= IB). Do im lm vic tnh Q (ICQ, UCEQ)s thay i
nhiu theo khi nhit thay i.
I C
1
H s n nh nhit
S
I CBo 1 (I B / I C )
V IB khng i nn c IB = 0. Thay vo cng thc trn c:
S= + 1
Nhn xt
H s n nh nhit S ln do ln
Mun thay i S phi thay i thay i BJT Mch b nh hng ln bi
nhit . Trong thc t ch dng cch phn cc ny khi khng yu cu n
nh nhit cao.
81
Bi tp
Cho s mch sau v h c tuyn ra nh hnh di y
Xc nh im cng tc tnh Q
Minh ho trn th c tuyn ra
Nhn xt v hot ng ca mch
82
p n
S hi tip m in p (1)
S mch
S hi tip m in p (2)
S ny c n nh nhit tt hn s phn dng c nh
Khi nhit tng dng IC tng ln st p trn RC tng
in p ti cc C l VC gim xung m VB = VC IB.RB do VB
cng gim xung, lm cho gc m UBE nh li, BJT dn yu i,
tc l cc dng qua BJT gim (IC gim chng li s thay i ban
u).
Qu trnh hon ton ngc li khi nhit gim im cng
tc tnh s n nh khi nhit thay i
Nh vy, nh in tr hi tip m RB m im lm vic tnh ca
mch s n nh hn.
84
S tng ng
Thevenin
VCC .R2
22.8,2k
UB
U B I B R B U BE ( I B I C ) R E
VCC I C RC I E RE U CE
Bi tp
Cho s mch sau v h c tuyn ra nh hnh di y
Xc nh cc thnh
phn dng v p
trn cc cc ca
transistor
Xc nh im cng
tc tnh Q
Nhn xt v hot
ng ca mch
87
Ht phn:
88