Professional Documents
Culture Documents
Duration: 90 Minutes
Maximum Marks: 50
5. Calculator is allowed. Charts, graph sheets or tables are NOT allowed in examination hall
6. Do the rough works in scribble pad provided/ In case of offline it can be done on paper itself?
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
Q.1.
Q.2.
Q.3.
Q.4.
Q.5.
Q.6.
Q.7.
Q.8.
Q.9.
If Cd and CS represent the depletion and diffusion capacitance of a diode respectively then which one
of the following statements are correct.
1.
Cd varies inversely with the depletion width
2.
Cs varies directly with the rate of change of diode current with respect to diode voltage
3.
Effective Junction capacitance is the series combination of Cd and CS
(A) 1 & 2 are correct (B) 2 & 3 are correct (C) 1 & 3 are correct (D) 1, 2 & 3 are correct
Which of the following statement is not correct about GaAs and GaAsP?
(A) GaAs emit light in Infra red region while GaAsP emits light in Visible region
(B) Both GaAs& GaAsP are used as material for LED
(C) GaAs is direct band gap type while GaAsP is indirect band gap type material
(D) Both GaAs and GaAsP are semiconductor material.
The reverse saturation current of a Si-based p-n junction diode increases 32 times due to a rise in
ambient temperature. If the original temperature was 40C. What is the final temperature?
(A) 90 C
(B) 72 C
(C) 45 C
(D) 50 C
Which of the following parameters of a Silicon Schottky diode is higher than that of a corresponding
PN Junction diode?
(A) Forward voltage drop
(B) Reverse Leakage current
(C) Reverse Recovery time
(D) Reverse recovery current
A hole in a semiconductor has
1.
Positive charge equal to the electron charge.
2.
Positive mass equal to the mass of the electron.
3.
An effective mass greater than the effective mass of electron.
4.
Negative mass and positive charge equal to the charge in nucleus.
(A) 1, 2, 3 and 4
(B) 1 and 3 only
(C) 2 and 4 only
(D) 3 and 4 only
When diodes are connected in series to increase voltage rating the Peak Inverse Voltage per junction
(A) Should not exceed half the break down voltage
(B) Should not exceed break down voltage
(C) Should not exceed one third the break down voltage
(D) May be equal or less than break down voltage
Light Dependent register is:
1.
Photo resistive device
2.
Photo voltaic device
3.
Photo emissive device
(A) Only 1
(B) both 1 & 2
(C) both 2 & 3
(D) both 1 & 3
Consider an N-type Silicon semiconductor if the Electric field intensity applied to material is
increased from 2000V/cm to 8000 V/cm then the mobility of free electrons shall multiply by a factor
of:
1
1
1
( A)
( B)
(C )
( D)2
2
4
2
Which of the following statement is not correct?
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
Q.10.
Q.11.
Q.12.
Q.13.
Q.14.
Q.15.
(A) In a P+N Junction under reverse bias the magnitude of electric field is always maximum at the
P+N Junction.
(B) In a P+N Junction under reverse bias the magnitude of depletion layer is more towards P+ side
(C) In a P+N Junction under reverse bias the magnitude of depletion layer is more towards N side
(D) P+N Junction diode under reverse bias is not used in Solar cell.
A, diode which is in reverse bias at 3 volt, has a junction capacitance of 20 pF when reverse bias is
increased to 24 volt then junction capacitance becomes 8 pF. The doping profile and contact
potential are:
(A) Linear graded V0 = 1 volt
(B) Linear graded V0 = 2 volt
(C) Step graded V0 = 1 volt
(D) Step graded V0 = 1 volt
A potential difference of 5, volt is applied across a uniform wire of length 50 meter. Calculate drift
velocity of electrons through the wire. If relaxation time is 1014 sec.
(A) 0.176 103 m/s
(B) 0.95 m/s
(C) 1.76 105 m/s
(D) 1.5 106 m/s
As compared to a Full wave rectifier using 2 diodes the four diode bridge rectifier has the dominant
advantage of:
(A) Higher current carrying capacity
(B) Lower Peak Inverse requirement
(C) Lower ripple factor
(D) Higher efficiency
Which of the followings are true about Hall Coefficient RH.
1.
RH value is zero for intrinsic semiconductor
2.
RH value is negative for intrinsic semiconductor
3.
For Extrinsic semiconductor value of RH increase with increase in temperature
4.
For Extrinsic semiconductor value of RH decrease with increase in temperature
(A) 1&2
(B) 2&3
(C) 1&3
(D) 2&4
If Common base DC current gain of a BJT is 0.98 then what is the value of its common collector DC
current gain?
If geometric mean of IDS and IDSS of a N-channel J-FET is unity mA and its pinch-off voltage is -4
volt then what is its trans-conductance gain (gm) in mA/volt is?
Q.16. Assuming VCE set=0.2V and = 50, the minimum base current (IB) required to drive the transistor in
figure to saturation is: (in Micro Amp)
3v
1K
IC
IB
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
Q.17. For the transistor shown in figure find the range of VBB for transistor to be in active region??
Given = 100
L
(exp(1) 1)
qN 0
D.
L
AqN 0
Q.19. The cut-in voltage of both zener diode Dz and diode D, as shown in figure are 0.7 volt. If break-down
voltage of zener is 3.3 volt and that of Diode D is 50 volt. All other parameters can be assumed to be
same as that of an ideal diode, than value of peak output voltage of are:
A.
B.
C.
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
Q.21. In an energy band-diagram of an open circuited P-N, Junction diode, the energy band of N-region
has shifted relative to that of a P-region. (Where V0 is contact potential)
A.
Downward by V0
B.
Downward by qV0
C.
Upward by V0
D.
Upward by qV0
Q.22. In an Intrinsic S.C. The Fermi-level lies 0.3 electron volt, below the conduction band at 300K. If
temperature is increased to 330K. What is new position of Fermi-level.
A.
0.3 eV below conduction band
B.
0.33 eV below conduction band
C.
In the Middle of conduction and Valance band.
D.
Data is insufficient
Q.23. An ideal Ge P- N, Junction diode at 125C has Rev. saturation current of 30 A, and bias voltage
equal to 0.2 volt. If dynamic resistance in forward direction is R1 and that in Reverse direction is R2,
then what is approx ratio of R1 & R2
A.
10-3
B.
10-4
C.
10-5
D.
10-6
Q.24. For the circuit shown in figure diode cut-in voltage is 0.6 volt and voltage drop across a conducting
diode is 0.7 volt. Calculate value of v0 if
D
v1 = v2 = 5 volt
2K
1
v1
v0
D2
2K
v2
18K
A.
4.07 volt
B.
2.035 volt
C.
8.14 volt
D.
3.02 volt
Q.25. An Intrinsic S.C. with energy gap 1ev has a Carrier Concentration N at a temp. of 200 K. If another
intrinsic S.C. has the same value of carrier concentration N at 600K. What is the energy gap value in
eV for the second Semi-conductor?
Q.26. In a uniformly doped Si-junction for zero-bias, if 80% of total space charge region is to be in N
region then what is the value of equilibrium potential in mV at T = 300K. If it is given that majority
carrier in P- region is 1.5 1010/cm3.
Q.27. Electrons in an N-Type Ge have a Mobility of 0.36 m2 V-1 sec-1 at room temperature,
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
1
m0, where m0 is the mass of electron.
4
Then calculate the time in pico second between collisions with the lattice??
If effective mass of an electron in the conduction band is
Q.28. Consider a Common-emitter circuit using BJT having I0 = 10-15Amphas collector resistance 6.8 K
and VCC = 10 volt. If IC = 1 mA, then what is the value of output in volt for an input sine wave signal
of 5 mV peak amplitude??
Q.29. A P+ - N Junction has a built in potential of 0.8 volt, if depletion layer width at a R. bias of 1.2 volt
is 2 m. For a Reverse bias of 7.2 volt the width of depletion layer in micro meter will be??
Common data for questions 30&31:
The given Si transistor is biased by fixed-bias circuit, as shown in figure it is given that
VCE =8V and IC = 4 mA
p(x)
N
0
x L
0
32.
33.
Calculate current density in diode assuming that diffusion constant of hole is 12 cm2/sec.
(a) 2.8 mA/cm2
(b) 5.6 mA/cm2
(c) 1.9 mA/cm2
(d) 9.5 mA/cm2
Calculate velocity of holes in n-region at x = 0.
(a) 235 cm/sec
(b) 361.5 cm/sec
(c) 503.9 cm/sec
(d) 461.5 cm/sec
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
(A)
So here
.I
VT
where
dQ
dI
.
dV
dV
2Vj 1
1
q Na Nd
Cd d Vj1/2
T2 T1 50
T2 50 40 90 C
4. (B)
Silicon schottky diode is a Metal-S.C. Jn diode
In which metal may be Gold or Platinum.
Here Metal is at anode and S.C. is at cathode.
Metal
N-Type
eV
Here equation is J JST exp a 1
KT
*
qbn
JST A T 2 exp
KT
A* is effective Richardson constant.
No depletion layer is formed, so cut in voltage will be very small. Here reverse current is due to thermionic
emission so value of rev. current will have higher value
Where
n p
6. (C) It is decided by practical values.
7. (A) LDR is a photo resistive device.
when sufficient light falls upon a S.C. then
S.C.
R
So in case of LDR by falling Light R
Solar cell is an example of photo voltaic device.
LED/LASER diode is an example of photo-emissive device.
8.
(A)
9.
So
1
E2
4
2
E1
1
1
2
(B)
++
++
P+
N
++
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
+
+
++
++
+
+
W VR VO
1/2
W VR VO
1/3
1/3
For Step-graded:
VR 2 VO
C1
C2
VR1 VO
11.
24 VO
20
8
3 VO
(A)
Vdrift E
VO 1volt
e V
.
m*
e V 1.6 1019
5
.
1014
*
31
m 9 10
50
1.6
Vdrift
103 m / sec
9
12.
(B)
Full wave Rectifier using 2 diode has PIV = 2Vm
Full wave rectifier using 4 diode has PIV = Vm
13.
(D)
Hall Effect is same as for intrinsic or N-Type S.C. RH value is negative for intrinsic S.C.
RH
if T
if T
Vdrift
So
R H in extrinsic S.C. if T
14.
Answer is: 50
For CB, AI
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
For CE, A I
For CC, A I 1
0.98 49
So
AI CC 1 1 49 50
15.
16.
IB
Ic
Ic 3 0.2 2.8
mA 56A
50 1 50
17.
B.
100
5 100
18. B
dR
.dx
1
.dx
nq A
Because n N0 exp( x / L)
R
dR
0
1
. exp( x / L)dx
q AN 0 0
1.L
(exp(1) 1)
Aq N 0
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
10
23.C
4.3 v0 4.3 v0 v0
2
2
18
v
4.3 v0 0
18
v0 4.07 volt
24. A
25.
Answer: 3eV
ni2 A0T 3e( EG / KT )
EG /KT1
= T23 .e
E1G
KT2
+
+
+
+
xp0 . Na xn 0 .Nd Na 4 Nd
xp0
But
27.
Nd+
V0
xn0
KT N N
n
2
q
ni
+
d
Answer: 0.5
m
e
since m = 0
m
4
1.6 1019 4
9.11031
9.1 0.36
1012
6.4
0.5 p sec
0.36 =
28.
Answer: 1.36
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
11
IC
VCC VCE
1 mA
RC
0
vi
VT
VT
5mv
v0
So
29.
6.8 5
1.36 volt
25
Answer: 4
VJ V0
1.2 0.8
1/ 2
7.2 0.8
2
1/ 2
2
So value of w2 will be 4
30.
Answer: 580
4
0.04 mA
100
VCC = IBRB + VBE + (IB + IC)Re
32 = 0.04 RB + 0.7 + 4.04 2
IB =
31.
RB = 580 K
Answer: 53
When is changed to ` 40
Then new IC` = 400.047 = 1.88 mA
So IC = 4 1.88 = 2.12
So there will be 53% reduction.
32. C&33.D
Current density J p
qDp ( p0 px )
Lp
Jp
Dp / p
KT
q
28A/11, Ground Floor- Jia Sarai New Delhi 16 Ph.: 09811382221, 011-32662945 www.panaceainstitute.org.in
12