5.

(BJTs)
,

5.1
1947 John Bardeen and Walter Brattain,
William Shockley,
@ Bell Labs () (Nobel
prize 1956)
1954 Texas Instruments

().

()

, .

()

166

 To on, off,

on, off

.

on, off
(wafers)
().

()

, .

167

5.2
,
,
. :
-
.
(interfacing) .

.

.


.

p-n-p n-p-n.
--
.

.

. .

, .

168

 (Emitter)


(Base)

(
)
(Collector)



( )
( )
npn- Transistor
pnp- Transistor

, .

169

5.3 Transistor
e- ( )
.

, .

-+-++-

---

+
+
+
p
+
+
+

+++-

n
-

170

 ( ) CB

, .

-+
-+
+

-+
-+
-

+
+
+
p
+
+
+

n
-

171

, .

+
+
+
p
+
+
+

0,7V
0,3V

n
-

172

 .

.
,
(, ...)
(J) (Jc).

. , , ,

.

, .

173

5.4 Transistor

E

B
E

(
e
)

B
E

( )

EB,CB
EB,CB
EB CB
E

+
-

C
B

a.

, .

+
-

C
B

b.

+
-

c.

174

5.5

>0,7V ( ) e-

e- (
).
e-
.
e- .
E
+

, .

C
B

+
-

175

CB

. npn:


. pnp
:
.

(npn: e
)


.
CB

(e )

, .

q(V0-VBE)
q(V0+VCB)

BE

CB

.

.

.

176

---

---

+
+
+
+
+
+

+
+
+
p
+
+
+

+
+
+
+
+
+

<0,7V -

n
-

C
+
-

, .

177

>0,7V +

+
+
+

+
+
+

+
+
+
p
+
+
+

+
+
+

+
+
+

--

n
-

C
+
-

IB=IE-IC
>0,7V ( ) e-
e-

, .

178

>0,7V +

+++-

+++-

+-++p+-++-

+++-

+++-

n
-

C
+
-

IB=IE-IC
e-
( ),
e- .

.

, .

179

5.6
-pnp

.

IE IpE ( )
InE ( ). IpE/ InE JE
p n- .

. p-n-p
.
.
IE =IpE +InE,
JE JC . IPC1 IpE
IpE - IPC1 .
.

, .

180

 npn

To JT

, .

181

 JC
Ic IC0. :
InCo p n IpCo
n p JC. :

IC0 InCO IpCO

IC ICO IpC1 IC0 IE

.
p-n-p IE IC0
IC.
n-p-n .
(2)
IC0
(IE =0) :

, .

182

IC ICO
IE 0

(large-signal current gain)

. 0,9-0,995.
IE, VCB .
(2) .

. IC0 I-V
. I0 IC0 V VC
JC p n . :

IC IE -ICO 1 eVC

VT

VC VT
(4) (2).

, .

183

5.7 dc

DC



:
adc = IC /
O
, adc


adc .

'

( EB, BC).


rb. (50-150)
()
rb
. ,

IBrb .
rb

.
rb
.

, .

184

5.8 Early-

.
.

.
,
.
, JE ()
Jc . WB
WB WB =WB-W, W .

, .

185


Early.
VCB :
VCB ( )
. |VCB|
IpC1 ( 2).
H (pn) . pn
0 d V0.
JE
o IE |VCB|.
VCB WB
. Punch-through.

, .

186

5.9

, --
.

- VCB.
T :
|VCB| IE
Early VEB.

|VCB|.

. VBE
1V
.

, .

187

5.10
(active region)
JC . IE =0.
IC0 (mA
nA Ge Si ). IE0 I
IC (2).
VCB
IE.
Early (. )
0,5% |IC| |VCB|.

active region

(saturation region)
VCB =0 IE =0
J , JC .

J C .
IC .
pnp, JC
.

I J JC
(cutoff region).

, .

188

5.11 Tran(sfer Re)sistor

.

Tran(sfer Re)sistor.

.
:
BE VBB
BC VCC
IB , IC IE ( IC = IE 1)
rE = ac V
I E RC RC RC
out
A

AV V

I E rE
rE
rE
Vin
IE = Vin/rE (Ohms Law)
Vout = ICRC IERC

, .

189

5.12

O .
.
. VBE 0,7V
.

RC


, .

- - - ,
- -n - - VCB

RB

- - - +

VCE
-

VCC

VBE
-

+
-

, .

>0,7V

-p - - - -n - - -

VBB

190

5.13 dc

ICE / IBE
(TRANSFER
CHARACTERISTIC).

hfe

,
. DC
transistor, (dc
CE)

,
dc = IC /

transistor
5%
, ,

IB. ,
dc 20.
, dc
50 300.
transistor dc 1000.

, .

191

5.14

.
( =50, C=10mA).
( Kirchhoff): IE=IC+IB ,
IC= IC0-IE :

1-

IC

I C0 I B

1- 1-

IC 1 IC0 IB

IB>>IC0 IC=IB. IC
VCE. (. ). Early.

, .

192

 IE=IC+IB
IC :

a = IC/IE < 1

b = IC/IB

IE
IB
1
1
1
1

IC
IC
adc
dc
dc
adc
dc 1

, .

193

 =100
IB= 10
IC = 100(10 ) = 1 mA
H VCE
(
)
VBB IB= 20
IC = 100(20 ) = 2 mA

VCE
VCE ,
;
( ) :
VCE= VCB + VBE = VCB + 0,7 V = 0 + 0,7V =
0,7V. H VCB 0-
( )

, .

( ),
VCE 1 V,


.

,
.

194

IB=0 IB= IE-IC IE= IC.

(.. 0,9 )
IC=10 IC0 .
IB=0

JE.

VCE (
)
.

JC JE
.

( volt)
VCE=VBE-VBC, VCE

IC VCE

VCE 0,7V
.
IC : IC = dc

, .

195

, .

, .

, .

, .

5.15 DC

(cutoff)
= 0 C 0

Maximum VCE=VCC
Q ( )


.

VCC VCEsat VCEsat : VCC

ICsat

RC
RC
Ic 0 VCC VCE
ICsat
IBsat

, .

I(sat),
' ,
.
RC
VCC IC(sat) =IC(max)

200

5.16
dc
, .
(=200)
VCC
+10V

To IB
. ,

R2
VCC 1.8V
R1 R2


transistor.
:

R1
10k

RC
3.6k

VTH VB

VT 1.8 Vac

dc=200

1mV peak

RL
2.2k

RE
1k

Vac Vdc

1.8V

VBE VB VE VE 1.1V

, .

ac ,
ac.

(-1800) ac
:
VC VCC IC RC 6.04V

201

, .

202

5.17
.
.
JC
JE Jc .
.
,

JC

Ico. B = 0
c = (+1) Ico.



L
:
IC=(+1)(C0+IL)

+1. n-p-n Ic-VCE
.
B. B0. c
B.

, .

203

5.18
,
.

0.7v .

.

, .


.
+1 :

, .

204

5.19
.
- ,

.

VB
. VB
.

VB 0.7V ( < VC),

VE = VB0.7 V.
: VB + VB;
VE VE + VE = VB + VB 0.7 V. VE = VB,
VE/VB= 1. ( )
,
.
,
.
.

, .

205

 ;
: IE = IB. ,
: IE + IE = (IB + IB),
IE/IB=
(100),
.
.
buffer .
;

, .

206


VBE 0.6 Volts .
,
, .
VBE 0.7 Volts ,
- .
, VBE=0.7 Volts .

:

VBE(Volts)

VCE (Volts)

< 0.6

=C=0

0.7
0.7

VCE=0
VCB>0 (npn)
VCE=0

IC=hFEIB
IB ICSat / hFE

:
1. VBE 0,7 Volts ,
.
2. VCE .
3. VBE,
.

, .

207

 5.1
To transistor 2N3904 dc =125. dc
;
dc .


:
=(VBB-VBE)/RB= (10V-0.7V)/1.5M=6.2
To dc dc
:

IC dcIB 125 6.2A 0.775mA

dc -
:

VCE VCC ICRC 20 0 ,775mA 5k 16 ,1V

, .

208

 5.2
To transistor 2N4401 dc = 80. dc

:
:

VCC 30V

20mA
RC 1.5k

VCC 30V

dc
transistor.

20 mA - 30 V, RB.

, .

209

 5.3
IC VCE Q RB = 390 k
dc = 80;
:
:

IB

VCC VBE 30V 0.7V

75.1A
RB
390k

IC dcIB 80 75.1 6mA

VCE VCC ICRC 30V 6mA 1.5k 21V

Q 6mA 21 V
RB Q '
dc .
RB Q
.

, .

210

 5.4
, LED, transistor
; dc = 150, Vin
transistor ; LED 2 V.
transistor , ,
VCE . ' 1 k
LED.
transistor

VCC VLED 20V 2V

ILED ICsatC

18mA
RC
1k

To dc , transistor ,

IBsat

ICsat
dc

18mA

0.12mA
150

, transistor ,

Vin IBRB VBE 0.12mA 47k 0.7V 6.34V

, .

211

 5.5

(=100, IC0=20nA=2*10-15mA).

VBB npn
. .
.
Kirchoff
: -5+200IB+VBE=0.
( )
VBE=0,7V :

5 0,7
0.0215mA
200
: IC0<< IB IC=IB =2.15mA
IB

.
npn VCB>0. :

10 3IC VCB VBE 0

VCB 32,15 10 0,7 2,85V

IB IC RC
. 3K
VCB .

, .

212

 5.6



R=50K. =100

IB IC.

Kirchoff
: -5+50IB+0,8=0 IB=4.2/50=0,084mA
: -10+3IC+0,2=0 IC=9,8/3=3,27mA
IB :

IB min

IC

3, 27
0, 033mA
100

IB=0,084> IBmin= 0,033mA .

, .

213