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TB6612FNG: Driver IC For Dual DC Motor
TB6612FNG: Driver IC For Dual DC Motor
Silicon Monolithic
TB6612FNG
Driver IC for Dual DC motor
Features
This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product,
ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive
mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at
reasonable levels.
: 0.14 g ()
2008-05-09
TB6612FNG
Block Diagram
VM1
24
23
22
21
20
STBY GND
19
18
16
15
VM3 VM2
14
13
11
12
STB
Control Logic
A
Control Logic
B
UVLO
TSD
H-SW
A
AO1
H-SW
B
AO2
BO2
BO2 PGND2
10
PGND2 BO1
BO1
Pin Functions
No.
Pin Name
AO1
AO1
PGND1
PGND1
AO2
AO2
BO2
BO2
PGND2
10
PGND2
I/O
Function
ch A output1
Power GND 1
ch A output2
ch B output2
Power GND 2
ch B output1
11
BO1
12
BO1
13
VM2
14
VM3
15
PWMB
16
BIN2
17
BIN1
18
GND
19
STBY
20
Vcc
21
AIN1
22
AIN2
23
PWMA
24
VM1
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TB6612FNG
Absolute Maximum Ratings (Ta = 25C)
Characteristics
Symbol
Rating
Unit
Remarks
VM
15
VCC
Input voltage
VIN
-0.2 to 6
IN1,IN2,STBY,PWM pins
Output voltage
VOUT
15
O1,O2 pins
IOUT
1.2
Supply voltage
Output current
Per 1 ch
IOUT (peak)
2
3.2
tw = 10 ms Single pulse
0.78
IC only
Power dissipation
PD
0.89
Operating temperature
Topr
-20 to 85
Storage temperature
Tstg
-55 to 150
1.36
Operating Range
50 mm 50 mm
76.2 mm 114.3 mm
(Ta=-2085)
Characteristics
Supply voltage
Symbol
Min
VCC
2.7
5.5
VM
2.5
13.5
1.0
IOUT
Switching frequency
fPWM
Typ.
Max
0.4
100
Input
pin;
; IN1,IN2,PWM,STBY
Unit
Remarks
VM 4.5 V
4.5 V > VM 2.5 V
Output
pin;
; O1,O2
Vcc
VM
Input
O1 O2
200k
Internal
circuit
GND
PGND
2008-05-09
TB6612FNG
H-SW Control Function
Input
Output
IN1
IN2
PWM
STBY
OUT1
OUT2
Mode
H/L
Short brake
CCW
Short brake
CW
Short brake
H/L
H/L
H/L
OFF
Stop
(High impedance)
OFF
Standby
(High impedance)
OUT1
VM
OUT1
OUT2
OUT2
GND
VM
OUT1
GND
GND
<OFF>
t2
<ON>
t1
<Short brake>
t3
VM
OUT1
OUT2
VM
OUT2
OUT1
GND
OUT2
GND
<OFF>
t4
<ON>
t5
VM
t5
t1
OUT1
Voltage wave
t3
GND
t4
t2
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TB6612FNG
Electrical Characteristics (unless otherwise specified, Ta = 25C, VCC = 3 V, VM = 5 V)
Characteristics
Symbol
ICC(3V)
Supply current
ICC(5.5V)
ICC(STB)
IM(STB)
Typ.
Max
STBY = VCC = 3 V, VM = 5 V
1.1
1.8
1.5
2.2
STBY = 0 V
VIH
VCC0.7
VIL
-0.2
Unit
mA
A
1
VCC+0.2
VCC0.3
IIH
VIN = 3 V
15
25
IIL
VIN = 0 V
1
VCC+0.2
VCC0.7
VIL(STB)
-0.2
VIN = 3 V
15
25
IIL(STB)
VIN = 0 V
Vsat(U+L)1
IO = 1 A, VCC = VM = 5 V
Vsat(U+L)2
IO = 0.3 A, VCC = VM = 5 V
IL(U)
VM = VOUT = 15 V
IL(L)
VM = 15 V, VOUT = 0 V
-1
VF(U)
VF(L)
UVLD
IF = 1A
(Designed value)
UVLC
(Designed value)
tf
Dead
H to L
time
L to H
(Designed value)
TSD
0.5
0.7
0.15
0.21
1.1
1.1
1.9
V
A
V
41
230
175
20
(Designed value)
TSD
2.2
50
24
V
A
VCC0.3
IIH(STB)
tr
Response speed
Min
VIH(STB)
Test Condition
ns
2008-05-09
TB6612FNG
Target characteristics
PD-- Ta
PD
Ta
(w)
1.50
2.5
ICICj-a=160/W
only j a = 160/W
Iout
IOUT-- Duty
Duty
(A)
PCB 50501.6mm
Cu40%
In boarding
PCB 76.2114.31.6mm
PCB area
76.2 mm114.3 mm1.6 mm
Cu30%
Cu area 40%
1.00
Cu area 30%
0.50
2.0
1 ch
driving
1ch
1.5
Output current
Power dissipation
PD
IOUT
In
boarding
2ch
2 ch driving
1.0
0.5
Ta
= 25, IC only
Ta=25,IC
0.0
0.00
0
50
100
Ta ()
0%
150
20%
40%
Duty
60%
80%
100%
2008-05-09
TB6612FNG
Typical Application Diagram
+2.7
V
+2.7V
to 5.5
V
5.5V
Vcc
C4
0.1uF
+ C3
10uF
STBY
20
UVLO
19
STBY
24
AIN1
21
1
2
AIN2
PWMA
22
Control
Logic
A
H-SW
Driver
A
23
5
6
MCU
TSD
13
BIN1
17
14
11
BIN2
PWMB
16
Control
Logic
B
H-SW
Driver
B
12
7
8
15
9
10
GND
Note:
VM1
AO1
C2
AO1
0.1uF
AO2
+ C1
10uF
+4.5 V
+4.5V
to 13.5 V
13.5V
AO2
PGND1
PGND1
VM2
VM3
BO1
BO1
BO2
BO2
PGND2
PGND2
18
Condensers for noise absorption (C1, C2, C3, and C4) should be connected as close as possible to the IC.
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TB6612FNG
Package Dimennsions
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TB6612FNG
Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified
for explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
3. Timing Charts
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case
of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,
are required.
[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into
the design to prevent device malfunction or breakdown caused by the current resulting from the
inrush current at power ON or the negative current resulting from the back electromotive force at
power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is
unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
[4] Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
2008-05-09
TB6612FNG
Points to remember on handling of ICs
(1) Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal
shutdown circuits operate against the over temperature, clear the heat generation status
immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
(2) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ)
at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.
In addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(3) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motors power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the devices motor power supply and output pins might be exposed to conditions
beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in
system design.
10
2008-05-09
TB6612FNG
070122EBA_R6
11
2008-05-09