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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Thyristors

MCR 100- 6,- 8

TO-92

Silicon

Planar PNPN

Thyristor

MAIN FEATURES
Symbol

value

unit

IT(RMS)

0.8

MCR100-6

400

MCR100-8

600

Tj

Junction Temperature

-40 ~ 125

Tstg

Storage Temperature

-55 ~ 150

VDRM

1.KATHODE

2.GATE

V
3.ANODE

DESCRIPTION
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
FEATURES
z
Blocking voltage to 400 V (MCR100-6)
z
RMS on-state current to 0.8 A
z
General purpose switching
APPLICATIONS
z
General purpose switching
z
Phase control applications
z

Solid state relays

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)


Parameter

Symbol

Test conditions

On state voltage *

VTM

Gate trigger voltage

VGT

Min

Max

Unit

ITM=1A

1.7

VAK=7V

0.8

Peak Repetitive forward


blocking voltage

MCR100-6

VADRM

IDRM= 10 A

Peak forward or reverse blocking

IDRM

VAK= Rated

Current

IRRM

VDRM or VRRM

IH

IHL=20mA ,VAK =7V

Holding current

A2
Gate trigger current

400

600

MCR100-8

IGT

A1
A

VAK=7V

10

mA

15

15

30

30

80

80

200

* Forward current applied for 1 ms maximum durationduty cycle1%


B,Sep,2011

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