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Current Source
Current Source
Current Sources
Current mirrors are commonly used for current sources in integrated circuit design. This section covers other
current sources that are often seen.
Figure 1: MOSFET (depletion mode) and JFET current sources. (a) n-channel. (b) p-channel.
For the n-channel device, the MOSFET drain current and gate-source voltage are given by
ID = K (VGS VT O )2
VGS = IS RS = ID RS
The object is to solve for RS for a desired drain current. When the equation for VGS is substituted into the
equation for ID , we obtain
2
ID = K (ID RS VT O ) = K (ID RS + VT O )
This can be solved for RS to obtain
p
ID /K VT O
RS =
ID
where VT O < 0. Note that K = K0 (1 + VDS ). If VDS is not specified, an often used approximation is
K ' K0 .
For the n-channel JFET, the drain current is given by
ID = (VGS VT O )
It follows that the MOSFET solution for RS can be used with the substitution of for K to obtain
p
ID / VT O
RS =
ID
1
The output resistance is a figure of merit for a current source. Ideally, it should be infinite. The output
resistance is the resistance seen looking into the drain of each source. It is given by
1
RS
rout = rid = r0 1 +
rs =
+ RS
rs
gm
1 + VDS
ID
Example 1 A depletion mode MOSFET has the parameters K0 = 5 104 A/ V2 , = 104 V1 , and
VT O = 2 V. Calculate the value of RS and rout if the transistor is to be used as a current source with a
current ID = 1.5 mA. Assume VDS = 8 V.
Solution.
K = K0 (1 + VDS ) = 5.2 104 A/ V2
p
ID /K VT O
RS =
= 2.47 k
ID
r0 =
1 + VDS
= 13.87 k
ID
p
gm = 2 KID = 1.766 103 S
rout = rid
rs =
1
= 566.1
gm
RS
= r0 1 +
+ RS = 745 k
rs
IC
IE RE =
(b) Choose a value for R2 . It is usually chosen so that the current I2 is some multiple m of IB , where
typically m 9. It follows that
I2 R2 = mIB R2 = m
IC
(n + 1) VBE
R2 = (n + 1) VBE = R2 =
mIC
If m is too small, the uncertainty in IB can cause errors if is not known precisely or if drifts with
temperature.
(c) Solve for R1 .
I1 R1
IC
R1 = V + V + (n + 1) VBE
V + V (n + 1) VBE
= R1 =
(m + 1) IC
=
(m + 1) IB R1 = (m + 1)
r0 =
VA + VCE
IC
r0 + re0 kRE
RE
1 0
re + RE
re0 =
R1 kR2 + rx
+ re
1+
For the pnp device, the subscripts for the voltages are reversed, e.g. VBE become VEB and VCE becomes
VEC .
Example 2 A BJT has the parameters = 100, VA = 75 V, and rx = 40 . The transistor is to be used
as a current source with a current IC = 1.5 mA, V + = 15 V, and V = 15 V. Calculate the values of R1 ,
,R2 , and rout if I1 = 10IB (n = 10) and IE RE = 2VBE (m = 2). Assume VBE = 0.65 V and VCE = 8 V.
Solution.
RE =
R1 =
re0 =
nVBE
nVBE
=
= 858
IC
(1 + ) IC
V + V (n + 1) VBE
= 170 k
(m + 1) IC
R2 =
(n + 1) VBE
= 13 k
mIC
r0 =
VA + VCE
= 55.33 k
IC
R1 kR2 + rx
R1 kR2 + rx VT
= 136.5
+ re =
+
1+
1+
IC
rout = ric =
r0 + re0 kRE
= 380.4 k
RE
1 0
re + RE
IC1
IC1
IO
RE1
RE2 = VBE1 +
2
1
1
For the pnp circuit, the subscripts for the voltages are reversed, e.g. VBE become VEB .
IO RE1
+
V V (VBE1 + VBE2 ) I1
2
1
R1 =
I1
IC1
RE1
1
IO
IC1
2
1
VBE1 +
RE2 =
Example 3 For V + = 15 V and V = 15 V, design the circuit in Fig. 3(a) for an output current
IC1 = 1.5 mA.
Solution. If we estimate = 100, the base current in Q1 is 0.015 mA. Let us choose I1 = 20IB2 = 0.3 mA.
We estimate VBE1 = VBE2 = 0.65 V. The current IC1 is given by IC1 = I1 IO / = 0.285 mA. The current
through RE1 is IE1 = IC1 / = 0.288 mA. If we choose IE1 RE1 = VBE1 , it follows that RE1 , R1 , and RE2
are given by
0.65
RE1 =
= 2.26 k
0.288 mA
30 2 0.65 0.285 mA 2.26 k
R1 =
= 91.2 k
0.3 mA
2 0.65
RE2 =
= 867
1.5 mA
This current divides between RF and RE go cause the voltage at the negative op-amp input to be
VN =
R1
IC
RE
RE + RF + R1
RE + RF VI
IO = 1 +
R1
RE